Overview
The CSD19532KTT is a 100-V, N-channel NexFET™ power MOSFET manufactured by Texas Instruments. This device is designed for high-frequency switching applications in power management systems, making it suitable for demanding power conversion and control circuits. It features a low on-state resistance of 4.6 mΩ at VGS = 10 V and can handle a maximum drain current of 136 A and a maximum power dissipation of 250 W.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Vds (Maximum Drain-Source Voltage) | 100 | V |
| Vgs (Maximum Gate-Source Voltage) | 20 | V |
| Id (Maximum Drain Current) | 136 | A |
| Tj (Maximum Junction Temperature) | 175 | °C |
| Rds(on) (On-State Resistance at VGS = 10 V) | 4.6 | mΩ |
| Pd (Maximum Power Dissipation) | 250 | W |
| Package | D2PAK (TO-263) | |
| Qg (Gate Charge at VGS = 10 V) | 44 | nC |
| Qgd (Gate to Drain Charge) | 5.6 | nC |
| VGS(th) (Threshold Voltage) | 2.6 | V |
Key Features
- Rapid Response Time: Offers fast switching times, making it suitable for high-frequency applications.
- Low On-State Resistance: With a maximum Rds(on) of 4.6 mΩ at VGS = 10 V, it minimizes power loss during operation.
- Ultra-Low Qg and Qgd: Features low gate charge and gate-to-drain charge, enhancing switching efficiency.
- High Sensitivity Threshold: Provides reliable signal detection and processing with a threshold voltage of 2.6 V.
- Avalanche Rated and Pb-Free Terminal Plating: Ensures durability and compliance with environmental standards.
- Low Input Current: Reduces input current draw, which is beneficial for battery-powered devices.
Applications
- Power Management Systems: Ideal for high-frequency switching applications in power supplies and power conversion circuits.
- Motor Control: Used in motor drive systems due to its high current handling and fast switching capabilities.
- Audio Amplifiers: Suitable for audio amplifiers requiring high power and efficiency.
- Battery-Powered Devices: Optimized for low power consumption, making it suitable for battery-powered applications.
- Secondary Side Synchronous Rectifier and Hot Swap: Also used in these applications due to its robust specifications and reliability.
Q & A
- What is the maximum drain-source voltage of the CSD19532KTT?
The maximum drain-source voltage (Vds) is 100 V.
- What is the maximum drain current of the CSD19532KTT?
The maximum drain current (Id) is 136 A.
- What is the on-state resistance of the CSD19532KTT at VGS = 10 V?
The on-state resistance (Rds(on)) at VGS = 10 V is 4.6 mΩ.
- What is the package type of the CSD19532KTT?
The package type is D2PAK (TO-263).
- What are some common applications of the CSD19532KTT?
Common applications include power management systems, motor control, audio amplifiers, and battery-powered devices.
- What is the maximum junction temperature of the CSD19532KTT?
The maximum junction temperature (Tj) is 175 °C.
- Does the CSD19532KTT have any special certifications or compliance?
Yes, it is Pb-free, RoHS compliant, and halogen-free.
- What is the gate charge (Qg) of the CSD19532KTT at VGS = 10 V?
The gate charge (Qg) at VGS = 10 V is 44 nC.
- Is the CSD19532KTT suitable for high-frequency switching applications?
Yes, it is designed for high-frequency switching applications due to its fast switching times and low on-state resistance.
- What is the threshold voltage (VGS(th)) of the CSD19532KTT?
The threshold voltage (VGS(th)) is 2.6 V.
