Overview
The CSD19536KTT is a 100-V, 2-mΩ, N-Channel NexFET™ power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, making it highly efficient for various power management tasks. The MOSFET is packaged in a D2PAK (TO-263) plastic package, which is lead-free, RoHS compliant, and halogen-free, ensuring environmental sustainability and reliability.
Key Specifications
| Parameter | Test Conditions | Typical Value | Unit |
|---|---|---|---|
| VDS - Drain-to-Source Voltage | VGS = 0 V, ID = 250 μA | 100 | V |
| VGS - Gate-to-Source Voltage | ±20 V | V | |
| ID - Continuous Drain Current (Package Limited) | 200 A | A | |
| ID - Continuous Drain Current (Silicon Limited) at TC = 25°C | 272 A | A | |
| IDM - Pulsed Drain Current | Pulse duration ≤100 µs, Duty cycle ≤ 1% | 400 A | A |
| PD - Power Dissipation | 375 W | W | |
| TJ - Operating Junction Temperature | -55 to 175 °C | °C | |
| VGS(th) - Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250 μA | 2.5 V | V |
| RDS(on) - Drain-to-Source On-Resistance at VGS = 6 V | ID = 100 A | 2.2 mΩ | mΩ |
| RDS(on) - Drain-to-Source On-Resistance at VGS = 10 V | ID = 100 A | 2.0 mΩ | mΩ |
| Qg - Gate Charge Total (10 V) | VDS = 50 V, ID = 100 A | 118 nC | nC |
| Qgd - Gate Charge Gate-to-Drain | 17 nC | nC |
Key Features
- Ultra-Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Lead-Free Terminal Plating
- RoHS Compliant and Halogen Free
- D2PAK Plastic Package
Applications
- Secondary Side Synchronous Rectifier
- Hot Swap
- Motor Control
Q & A
- What is the maximum drain-to-source voltage of the CSD19536KTT MOSFET?
The maximum drain-to-source voltage (VDS) is 100 V.
- What is the typical on-state resistance of the CSD19536KTT at VGS = 6 V?
The typical on-state resistance (RDS(on)) at VGS = 6 V is 2.2 mΩ.
- What is the gate-to-source threshold voltage of the CSD19536KTT?
The gate-to-source threshold voltage (VGS(th)) is typically 2.5 V.
- What are the key features of the CSD19536KTT MOSFET?
The key features include ultra-low Qg and Qgd, low thermal resistance, avalanche rating, lead-free terminal plating, RoHS compliance, halogen-free, and a D2PAK plastic package.
- What are the typical applications of the CSD19536KTT MOSFET?
The typical applications include secondary side synchronous rectifier, hot swap, and motor control.
- What is the maximum continuous drain current of the CSD19536KTT at 25°C?
The maximum continuous drain current (ID) at 25°C is 200 A for the package and 272 A for the silicon.
- What is the operating junction temperature range of the CSD19536KTT?
The operating junction temperature range is -55 to 175 °C.
- What is the total gate charge (Qg) of the CSD19536KTT?
The total gate charge (Qg) is typically 118 nC.
- Is the CSD19536KTT MOSFET RoHS compliant and halogen-free?
Yes, the CSD19536KTT is RoHS compliant and halogen-free.
- What package type is used for the CSD19536KTT MOSFET?
The CSD19536KTT is packaged in a D2PAK (TO-263) plastic package.
