Overview
The CSD19535KTTT is a 100-V N-Channel NexFET™ Power MOSFET produced by Texas Instruments. This device is designed to minimize losses in power conversion applications, making it highly efficient for various power management needs. It features a D2PAK (TO-263) plastic package and is known for its ultra-low gate charge and low thermal resistance, which are crucial for high-performance power electronics.
Key Specifications
| Parameter | Test Conditions | Typical Value | Unit |
|---|---|---|---|
| VDS - Drain-to-Source Voltage | VGS = 0 V, ID = 250 μA | 100 | V |
| VGS - Gate-to-Source Voltage | ±20 | V | |
| ID - Continuous Drain Current (Package Limited) | 200 | A | |
| ID - Continuous Drain Current (Silicon Limited) at TC = 25°C | 197 | A | |
| ID - Continuous Drain Current (Silicon Limited) at TC = 100°C | 139 | A | |
| IDM - Pulsed Drain Current | Max RθJC = 0.5°C/W, pulse duration ≤100 µs, duty cycle ≤ 1% | 400 | A |
| PD - Power Dissipation at TC = 25°C | 300 | W | |
| TJ - Operating Junction Temperature | -55 to 175 | °C | |
| VGS(th) - Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250 μA | 2.7 | V |
| RDS(on) - On-State Resistance at VGS = 10 V, ID = 100 A | 2.8 | mΩ | |
| Qg - Gate Charge Total (10 V) | VDS = 50 V, ID = 100 A | 75 | nC |
| Qgd - Gate Charge Gate-to-Drain | 11 | nC | |
| EAS - Avalanche Energy, Single Pulse | ID = 95 A, L = 0.1 mH | 451 | mJ |
Key Features
- Ultra-Low Qg and Qgd: Minimizes switching losses.
- Low-Thermal Resistance: Enhances heat dissipation.
- Avalanche Rated: Capable of withstanding high energy pulses.
- Lead-Free Terminal Plating: Compliant with environmental regulations.
- RoHS Compliant and Halogen Free: Environmentally friendly.
- D2PAK Plastic Package: Compact and thermally efficient.
Applications
- Hot Swap: Suitable for applications requiring safe insertion and removal of power supplies.
- Motor Control: Ideal for motor drive systems due to its high current and low on-state resistance.
- Secondary Side Synchronous Rectifier: Used in power supply designs for efficient rectification.
Q & A
- What is the maximum drain-to-source voltage of the CSD19535KTTT?
The maximum drain-to-source voltage is 100 V.
- What is the typical on-state resistance of the CSD19535KTTT at VGS = 10 V and ID = 100 A?
The typical on-state resistance is 2.8 mΩ.
- What is the gate charge total (Qg) at VDS = 50 V and ID = 100 A?
The gate charge total is 75 nC.
- What is the maximum continuous drain current for the CSD19535KTTT at TC = 25°C?
The maximum continuous drain current is 197 A (silicon limited).
- What are the operating junction and storage temperatures for the CSD19535KTTT?
The operating junction and storage temperatures range from -55°C to 175°C.
- Is the CSD19535KTTT RoHS compliant and halogen free?
- What is the package type of the CSD19535KTTT?
The package type is D2PAK (TO-263) plastic package.
- What are some common applications of the CSD19535KTTT?
- What is the maximum power dissipation at TC = 25°C for the CSD19535KTTT?
- What is the avalanche energy rating for the CSD19535KTTT?
