Overview
The CSD18535KTTT is a state-of-the-art N-Channel NexFET™ Power MOSFET manufactured by Texas Instruments. This component is renowned for its high efficiency and power density, making it suitable for a wide range of applications including power supply systems, motor drives, and high-performance computing.
With a continuous drain current (Id) of 200 A at 25°C and up to 279 A at the silicon limit, this MOSFET is capable of handling high-current applications with ease. Its low on-resistance (RDS(on)) of 2.9 mΩ at VGS of 10 V ensures minimal power loss and heat generation, making it an excellent choice for energy-sensitive designs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (VDS) | 60 | V |
| Gate-to-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (Id) @ 25°C | 200 A (Ta), 279 A (Tc) | A |
| Pulsed Drain Current (IDM) | 400 A | A |
| Power Dissipation (PD) | 300 W | W |
| Operating Junction and Storage Temperature (TJ, Tstg) | –55 to 175 | °C |
| Gate-to-Source Threshold Voltage (VGS(th)) | 1.4 to 2.4 | V |
| On-State Resistance (RDS(on)) @ VGS = 10 V, Id = 100 A | 2.3 to 2.9 mΩ | mΩ |
| Gate Charge (Qg) @ VGS = 10 V | 81 nC | nC |
| Input Capacitance (Ciss) @ VDS = 30 V | 6620 pF | pF |
| Package | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | |
| Mounting Type | Surface Mount |
Key Features
- Low on-resistance (RDS(on)) of 2.9 mΩ at VGS of 10 V, minimizing power loss and heat generation.
- Ultra-low gate charge (Qg) and output capacitance (Coss), reducing switching losses and improving overall system efficiency.
- High continuous drain current of 200 A at 25°C and up to 279 A at the silicon limit.
- Maximum drain-source voltage (VDS) of 60 V, providing versatility for various circuit topologies.
- Compact 5 mm x 6 mm SON package with an exposed pad for enhanced thermal performance.
- Integrated protection features including temperature-dependent current limiting and thermal shutdown.
Applications
- Power supply systems for servers and telecom infrastructure.
- Motor drives and high-performance computing applications.
- Electric vehicle powertrains and other high-power conversion systems.
- Energy-sensitive designs requiring minimal power loss and heat generation.
Q & A
- What is the maximum drain-source voltage (VDS) of the CSD18535KTTT?
The maximum drain-source voltage (VDS) is 60 V.
- What is the continuous drain current (Id) of the CSD18535KTTT at 25°C?
The continuous drain current (Id) at 25°C is 200 A, and up to 279 A at the silicon limit.
- What is the on-state resistance (RDS(on)) of the CSD18535KTTT at VGS = 10 V and Id = 100 A?
The on-state resistance (RDS(on)) is 2.3 to 2.9 mΩ.
- What is the gate charge (Qg) of the CSD18535KTTT at VGS = 10 V?
The gate charge (Qg) is 81 nC.
- What is the operating temperature range of the CSD18535KTTT?
The operating junction and storage temperature range is –55 to 175°C.
- What package types are available for the CSD18535KTTT?
The available packages include TO-263-4, D2Pak (3 Leads + Tab), and TO-263AA.
- What are the key features of the CSD18535KTTT that make it suitable for high-power applications?
Key features include low on-resistance, ultra-low gate charge, high continuous drain current, and integrated protection features.
- What are some common applications of the CSD18535KTTT?
Common applications include power supply systems, motor drives, high-performance computing, and electric vehicle powertrains.
- How does the CSD18535KTTT enhance thermal performance?
The component is housed in a compact package with an exposed pad, enhancing thermal performance.
- Does the CSD18535KTTT have any integrated protection features?
Yes, it includes temperature-dependent current limiting and thermal shutdown.
