PMV65XPE215
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NXP USA Inc. PMV65XPE215

Manufacturer No:
PMV65XPE215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
P-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV65XPE215 is a P-Channel MOSFET produced by Nexperia USA Inc., a leading manufacturer of discrete semiconductor products. This MOSFET is designed for high-performance applications requiring low on-resistance and high current handling. It features a drain-to-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 2.8 A at 25°C. The device is packaged in a TO-236AB (SOT-23-3, SC-59) surface mount package, making it suitable for a variety of compact electronic designs.

Key Specifications

Category Value
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current – Continuous Drain (Id) @ 25°C 2.8 A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8 V, 4.5 V
Rds On (Max) @ Id, Vgs 74 mΩ @ 2.8 A, 4.5 V
Vgs(th) (Max) @ Id 900 mV @ 250 µA
Gate Charge (Qg) (Max) @ Vgs 7.7 nC @ 4.5 V
Vgs (Max) ±12 V
Input Capacitance (Ciss) (Max) @ Vds 744 pF @ 20 V
Power Dissipation (Max) 480 mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3

Key Features

  • Low On-Resistance: The PMV65XPE215 offers a maximum Rds On of 74 mΩ at 2.8 A and 4.5 V, making it suitable for high-efficiency applications.
  • High Current Handling: With a continuous drain current of 2.8 A, this MOSFET can handle demanding current requirements.
  • Compact Packaging: The TO-236AB (SOT-23-3, SC-59) surface mount package is ideal for space-constrained designs.
  • Broad Operating Temperature Range: The device operates from -55°C to 150°C, making it versatile for various environmental conditions.
  • Low Gate Charge: A gate charge of 7.7 nC at 4.5 V facilitates fast switching times and reduced power losses.

Applications

  • Power Management: Suitable for power management in consumer electronics, industrial control systems, and automotive applications.
  • Switching Circuits: Ideal for use in switching circuits due to its low on-resistance and fast switching times.
  • Motor Control: Can be used in motor control circuits where high current and low on-resistance are critical.
  • Battery Management Systems: Useful in battery management systems for efficient power handling.

Q & A

  1. What is the drain-to-source voltage (Vdss) of the PMV65XPE215?

    The drain-to-source voltage (Vdss) is 20 V.

  2. What is the continuous drain current (Id) of the PMV65XPE215 at 25°C?

    The continuous drain current (Id) is 2.8 A at 25°C.

  3. What is the maximum on-resistance (Rds On) of the PMV65XPE215?

    The maximum on-resistance (Rds On) is 74 mΩ at 2.8 A and 4.5 V.

  4. What is the gate charge (Qg) of the PMV65XPE215?

    The gate charge (Qg) is 7.7 nC at 4.5 V.

  5. What is the operating temperature range of the PMV65XPE215?

    The operating temperature range is -55°C to 150°C (TJ).

  6. What package types are available for the PMV65XPE215?

    The device is available in TO-236-3, SC-59, and SOT-23-3 packages.

  7. Is the PMV65XPE215 RoHS compliant?

    Yes, the PMV65XPE215 is RoHS compliant.

  8. What is the maximum power dissipation of the PMV65XPE215?

    The maximum power dissipation is 480 mW (Ta).

  9. What is the input capacitance (Ciss) of the PMV65XPE215?

    The input capacitance (Ciss) is 744 pF at 20 V.

  10. What are some typical applications of the PMV65XPE215?

    Typical applications include power management, switching circuits, motor control, and battery management systems.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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Similar Products

Part Number PMV65XPE215 PMV65XPEA215 PMV65XP,215 PMV65XP1215
Manufacturer NXP USA Inc. NXP USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Active Active Active Active
FET Type - - P-Channel -
Technology - - MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) - - 20 V -
Current - Continuous Drain (Id) @ 25°C - - 2.8A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) - - 1.8V, 4.5V -
Rds On (Max) @ Id, Vgs - - 74mOhm @ 2.8A, 4.5V -
Vgs(th) (Max) @ Id - - 900mV @ 250µA -
Gate Charge (Qg) (Max) @ Vgs - - 7.7 nC @ 4.5 V -
Vgs (Max) - - ±12V -
Input Capacitance (Ciss) (Max) @ Vds - - 744 pF @ 20 V -
FET Feature - - - -
Power Dissipation (Max) - - 480mW (Ta) -
Operating Temperature - - -55°C ~ 150°C (TJ) -
Mounting Type - - Surface Mount -
Supplier Device Package - - TO-236AB -
Package / Case - - TO-236-3, SC-59, SOT-23-3 -

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