PMV65XPE215
  • Share:

NXP USA Inc. PMV65XPE215

Manufacturer No:
PMV65XPE215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
P-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV65XPE215 is a P-Channel MOSFET produced by Nexperia USA Inc., a leading manufacturer of discrete semiconductor products. This MOSFET is designed for high-performance applications requiring low on-resistance and high current handling. It features a drain-to-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 2.8 A at 25°C. The device is packaged in a TO-236AB (SOT-23-3, SC-59) surface mount package, making it suitable for a variety of compact electronic designs.

Key Specifications

Category Value
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current – Continuous Drain (Id) @ 25°C 2.8 A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8 V, 4.5 V
Rds On (Max) @ Id, Vgs 74 mΩ @ 2.8 A, 4.5 V
Vgs(th) (Max) @ Id 900 mV @ 250 µA
Gate Charge (Qg) (Max) @ Vgs 7.7 nC @ 4.5 V
Vgs (Max) ±12 V
Input Capacitance (Ciss) (Max) @ Vds 744 pF @ 20 V
Power Dissipation (Max) 480 mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3

Key Features

  • Low On-Resistance: The PMV65XPE215 offers a maximum Rds On of 74 mΩ at 2.8 A and 4.5 V, making it suitable for high-efficiency applications.
  • High Current Handling: With a continuous drain current of 2.8 A, this MOSFET can handle demanding current requirements.
  • Compact Packaging: The TO-236AB (SOT-23-3, SC-59) surface mount package is ideal for space-constrained designs.
  • Broad Operating Temperature Range: The device operates from -55°C to 150°C, making it versatile for various environmental conditions.
  • Low Gate Charge: A gate charge of 7.7 nC at 4.5 V facilitates fast switching times and reduced power losses.

Applications

  • Power Management: Suitable for power management in consumer electronics, industrial control systems, and automotive applications.
  • Switching Circuits: Ideal for use in switching circuits due to its low on-resistance and fast switching times.
  • Motor Control: Can be used in motor control circuits where high current and low on-resistance are critical.
  • Battery Management Systems: Useful in battery management systems for efficient power handling.

Q & A

  1. What is the drain-to-source voltage (Vdss) of the PMV65XPE215?

    The drain-to-source voltage (Vdss) is 20 V.

  2. What is the continuous drain current (Id) of the PMV65XPE215 at 25°C?

    The continuous drain current (Id) is 2.8 A at 25°C.

  3. What is the maximum on-resistance (Rds On) of the PMV65XPE215?

    The maximum on-resistance (Rds On) is 74 mΩ at 2.8 A and 4.5 V.

  4. What is the gate charge (Qg) of the PMV65XPE215?

    The gate charge (Qg) is 7.7 nC at 4.5 V.

  5. What is the operating temperature range of the PMV65XPE215?

    The operating temperature range is -55°C to 150°C (TJ).

  6. What package types are available for the PMV65XPE215?

    The device is available in TO-236-3, SC-59, and SOT-23-3 packages.

  7. Is the PMV65XPE215 RoHS compliant?

    Yes, the PMV65XPE215 is RoHS compliant.

  8. What is the maximum power dissipation of the PMV65XPE215?

    The maximum power dissipation is 480 mW (Ta).

  9. What is the input capacitance (Ciss) of the PMV65XPE215?

    The input capacitance (Ciss) is 744 pF at 20 V.

  10. What are some typical applications of the PMV65XPE215?

    Typical applications include power management, switching circuits, motor control, and battery management systems.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
320

Please send RFQ , we will respond immediately.

Same Series
RD15S10H00/AA
RD15S10H00/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HE20/AA
CBC13W3S10HE20/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20LVLS/AA
DD15S20LVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T0/AA
DD26S200T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E30
DD26S200E30
CONN D-SUB HD RCPT 26P SLDR CUP
M24308/24-67Z
M24308/24-67Z
CONN D-SUB HD PLUG 15POS SLDR
DD26S2S50T0/AA
DD26S2S50T0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S00X
DD44S32S00X
CONN D-SUB HD RCPT 44P VERT SLDR
CBC46W4S100T2S/AA
CBC46W4S100T2S/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number PMV65XPE215 PMV65XPEA215 PMV65XP,215 PMV65XP1215
Manufacturer NXP USA Inc. NXP USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Active Active Active Active
FET Type - - P-Channel -
Technology - - MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) - - 20 V -
Current - Continuous Drain (Id) @ 25°C - - 2.8A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) - - 1.8V, 4.5V -
Rds On (Max) @ Id, Vgs - - 74mOhm @ 2.8A, 4.5V -
Vgs(th) (Max) @ Id - - 900mV @ 250µA -
Gate Charge (Qg) (Max) @ Vgs - - 7.7 nC @ 4.5 V -
Vgs (Max) - - ±12V -
Input Capacitance (Ciss) (Max) @ Vds - - 744 pF @ 20 V -
FET Feature - - - -
Power Dissipation (Max) - - 480mW (Ta) -
Operating Temperature - - -55°C ~ 150°C (TJ) -
Mounting Type - - Surface Mount -
Supplier Device Package - - TO-236AB -
Package / Case - - TO-236-3, SC-59, SOT-23-3 -

Related Product By Categories

NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
STF4N80K5
STF4N80K5
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3

Related Product By Brand

BF909A215
BF909A215
NXP USA Inc.
MOSFET N-CH SOT-143B
MC9S08PL4CTG
MC9S08PL4CTG
NXP USA Inc.
IC MCU 8BIT 4KB FLASH 16TSSOP
MKL04Z32VLF4
MKL04Z32VLF4
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 48LQFP
P89LPC935FDH,518
P89LPC935FDH,518
NXP USA Inc.
IC MCU 8BIT 8KB FLASH 28TSSOP
LS1028AXN7PQA
LS1028AXN7PQA
NXP USA Inc.
LS1028A-1500 XT NO SEC
TJA1021T/20/C,118
TJA1021T/20/C,118
NXP USA Inc.
IC TRANSCEIVER FULL 1/1 8SO
TJA1042TK/3/1,118
TJA1042TK/3/1,118
NXP USA Inc.
HIGH-SPEED CAN TRANSCEIVER WITH
UJA1075ATW/3V3WD,1
UJA1075ATW/3V3WD,1
NXP USA Inc.
IC INTFACE SPECIALIZED 32HTSSOP
TDA8932T/N1,118
TDA8932T/N1,118
NXP USA Inc.
IC AMP CLSS D MONO/STER 55W 32SO
N74F07D,602
N74F07D,602
NXP USA Inc.
IC BUFFER NON-INVERT 5.5V 14SO
MC56F82723VLC557
MC56F82723VLC557
NXP USA Inc.
MICROCONTROLLER, 32-BIT, FLASH,
SA605DK,112
SA605DK,112
NXP USA Inc.
RF RX ASK/FSK 0HZ-500MHZ 20SSOP