PMV65XPVL
  • Share:

Nexperia USA Inc. PMV65XPVL

Manufacturer No:
PMV65XPVL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 2.8A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV65XPVL is a P-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. This component utilizes advanced Trench MOSFET technology, which enhances its reliability and efficiency. The PMV65XPVL is designed to meet rigorous standards, particularly in the automotive and industrial sectors, ensuring stable performance under varying conditions. With its low threshold voltage and minimized on-state resistance, this MOSFET is ideal for applications requiring high power efficiency and minimal energy wastage.

Key Specifications

Parameter Value
FET Type P-Channel
Rds On (Max) @ Id, Vgs 74m Ω @ 2.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 744pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 4V
Vgs (Max) ±12V
Drain Current-Max (Abs) (ID) 2.8A
DS Breakdown Voltage-Min 20V
Drain to Source Voltage (Vdss) 20V
JEDEC-95 Code TO-236AB
Drain-source On Resistance-Max 0.0740 ohm
RoHS Status ROHS3 Compliant
Package / Case TO-236-3, SC-59, SOT-23-3

Key Features

  • Diminished Threshold Voltage: The PMV65XPVL has a reduced threshold voltage, which improves power efficiency by activating at a lower voltage and reducing energy wastage.
  • Lowered On-State Resistance: The low on-state resistance minimizes power loss during conduction, ensuring minimal power dissipation as heat and boosting efficiency and device lifespan.
  • Sophisticated Trench MOSFET Technology: This technology enhances the component's reliability and efficiency, allowing for higher power density and superior current flow management.
  • Reliability Augmentation: The PMV65XPVL is designed to provide stable performance under varying conditions, making it a preferred component for advanced applications in telecommunications and automotive industries.

Applications

  • Low-Power DC-DC Converters: The PMV65XPVL is used in low-power DC-DC converters to optimize power consumption and minimize energy losses.
  • Load Switching: It facilitates rapid and dependable switching of loads, ensuring smooth device functionality in dynamic settings.
  • Battery Management Systems: The component aids in regulating and monitoring charging cycles, safeguarding battery health and extending device operation time.
  • Battery-Powered Portable Equipment: The PMV65XPVL is beneficial in portable battery-powered devices where energy preservation is crucial, ensuring extended battery life.

Q & A

  1. What is the PMV65XPVL MOSFET used for?

    The PMV65XPVL is used in various applications including low-power DC-DC converters, load switching, battery management systems, and battery-powered portable equipment.

  2. What are the key features of the PMV65XPVL?

    The key features include a diminished threshold voltage, lowered on-state resistance, sophisticated Trench MOSFET technology, and reliability augmentation.

  3. What is the maximum drain current of the PMV65XPVL?

    The maximum drain current (ID) is 2.8A.

  4. What is the maximum gate-source voltage (Vgs) for the PMV65XPVL?

    The maximum gate-source voltage (Vgs) is ±12V.

  5. What package types are available for the PMV65XPVL?

    The PMV65XPVL is available in TO-236-3, SC-59, and SOT-23-3 packages.

  6. Is the PMV65XPVL RoHS compliant?

    Yes, the PMV65XPVL is ROHS3 compliant.

  7. What is the drain-source breakdown voltage of the PMV65XPVL?

    The drain-source breakdown voltage is 20V.

  8. How does the PMV65XPVL improve power efficiency?

    The PMV65XPVL improves power efficiency through its reduced threshold voltage and minimized on-state resistance, reducing energy wastage and power dissipation.

  9. What industries benefit from the use of the PMV65XPVL?

    The PMV65XPVL is particularly beneficial in the automotive, telecommunications, and industrial sectors due to its high reliability and efficiency.

  10. Where can I find the datasheet for the PMV65XPVL?

    The datasheet for the PMV65XPVL can be found on Nexperia's official website or through various electronic component suppliers.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:74mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:7.7 nC @ 4 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:744 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):480mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.09
7,944

Please send RFQ , we will respond immediately.

Same Series
PMV65XPVL
PMV65XPVL
MOSFET P-CH 20V 2.8A TO236AB

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
FDMS86101A
FDMS86101A
onsemi
MOSFET N-CH 100V 13A/60A 8PQFN
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1

Related Product By Brand

BAS21VD,135
BAS21VD,135
Nexperia USA Inc.
DIODE ARRAY GP 200V 200MA 6TSOP
PMEG6045ETPX
PMEG6045ETPX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 4.5A SOD128
PMEG4030ER/8X
PMEG4030ER/8X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 3A SOD123W
BZX384-B10,115
BZX384-B10,115
Nexperia USA Inc.
DIODE ZENER 10V 300MW SOD323
BC857BQB-QZ
BC857BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
PMZ600UNEYL
PMZ600UNEYL
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
74LVC4066PW,112
74LVC4066PW,112
Nexperia USA Inc.
IC SWITCH QUAD SPST 14TSSOP
HEF4066BT,652
HEF4066BT,652
Nexperia USA Inc.
IC SWITCH QUAD 1X1 14SOIC
74HCT245D,652
74HCT245D,652
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 20SO
74LVC240ADB,118
74LVC240ADB,118
Nexperia USA Inc.
IC BUFFER INVERT 3.6V 20SSOP
74LVC1G74GT-Q100X
74LVC1G74GT-Q100X
Nexperia USA Inc.
IC FF D-TYPE SNGL 1BIT 8XSON
PDZ3.9BGW,118
PDZ3.9BGW,118
Nexperia USA Inc.
SINGLE ZENER DIODE IN A SOD123 P