Overview
The PBSS4160DS,115 is a 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor pair manufactured by Nexperia USA Inc. This component is packaged in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. It is designed for low power switching applications and offers high efficiency due to its low collector-emitter saturation voltage and high collector current gain.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VCE (Collector-Emitter Voltage) | 60 | V | |||
| IC (Collector Current) | 1 | A | |||
| VCEsat (Collector-Emitter Saturation Voltage) | IC = 500 mA; IB = 50 mA | 100 | 150 | 250 | mV |
| hFE (DC Current Gain) | IC = 500 mA; VCE = 5 V | 100 | 200 | 400 | |
| Tj (Junction Temperature) | 150 | °C | |||
| Tamb (Ambient Temperature) | -65 | 150 | °C | ||
| Ptot (Total Power Dissipation) | Tamb ≤ 25 °C; Device mounted on FR4 PCB | 420 | mW | ||
| Rth(j-a) (Thermal Resistance from Junction to Ambient) | Device mounted on FR4 PCB, single-sided copper, tin-plated | 431 | K/W |
Key Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- High collector current gain (hFE) at high IC
- High efficiency due to less heat generation
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
- Lead-free and halogen-free according to Nexperia's halogen-free definition
- Compliant with EU RoHS, CN RoHS, and ELV directives
Applications
- Dual low power switches (e.g., motors, fans)
- Automotive applications
Q & A
- What is the maximum collector-emitter voltage of the PBSS4160DS,115 transistor?
The maximum collector-emitter voltage is 60 V. - What is the typical collector-emitter saturation voltage VCEsat of this transistor?
The typical VCEsat is 150 mV at IC = 500 mA and IB = 50 mA. - What is the maximum collector current IC of the PBSS4160DS,115?
The maximum collector current is 1 A. - What is the junction temperature range for this transistor?
The junction temperature range is up to 150 °C. - Is the PBSS4160DS,115 compliant with RoHS directives?
Yes, it is compliant with EU RoHS, CN RoHS, and ELV directives. - What is the thermal resistance from junction to ambient for this transistor?
The thermal resistance from junction to ambient is up to 431 K/W when mounted on an FR4 PCB. - What are the common applications of the PBSS4160DS,115 transistor?
Common applications include dual low power switches (e.g., motors, fans) and automotive applications. - What is the package type of the PBSS4160DS,115 transistor?
The package type is SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. - Is the PBSS4160DS,115 lead-free and halogen-free?
Yes, it is lead-free and halogen-free according to Nexperia's halogen-free definition. - What is the DC current gain (hFE) of this transistor?
The DC current gain (hFE) is typically 200 at IC = 500 mA and VCE = 5 V.
