Overview
The NVMFD5877NLT1G is a dual N-channel MOSFET produced by onsemi, designed for high-performance applications. This device features a compact SO-8FL package and is suitable for a variety of power management and switching tasks. With its logic-level gate drive, it is easy to control and integrate into various electronic systems.
Key Specifications
| Parameter | Value |
|---|---|
| Transistor Polarity | N-Channel |
| Number of Channels | 2 Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 12 A (per channel) |
| Rds(on) - On-Resistance | 39 mΩ (typical at Vgs = 10 V) |
| Package / Case | SO-8FL-Dual-8, DFN8 (5x6mm) |
| Power Dissipation | 12 W (per channel) |
Key Features
- Logic-level gate drive for easy control and integration.
- Compact SO-8FL and DFN8 packages for space-efficient designs.
- High current handling capability with 12 A continuous drain current per channel.
- Low on-resistance of 39 mΩ (typical at Vgs = 10 V) for reduced power losses.
- Dual N-channel configuration for versatile application in power management and switching circuits.
Applications
The NVMFD5877NLT1G is suitable for a wide range of applications, including:
- Power management in DC-DC converters and power supplies.
- Motor control and drive systems.
- Switching circuits in industrial and automotive systems.
- General-purpose power switching in consumer electronics.
Q & A
- What is the drain-source breakdown voltage of the NVMFD5877NLT1G? The drain-source breakdown voltage is 60 V.
- How many channels does the NVMFD5877NLT1G have? It has 2 N-channel MOSFETs.
- What is the typical on-resistance of the NVMFD5877NLT1G? The typical on-resistance is 39 mΩ at Vgs = 10 V.
- What are the package options for the NVMFD5877NLT1G? It is available in SO-8FL-Dual-8 and DFN8 (5x6mm) packages.
- What is the continuous drain current rating per channel? The continuous drain current rating is 12 A per channel.
- Is the NVMFD5877NLT1G suitable for high-power applications? Yes, it is designed for high-performance applications with a power dissipation of 12 W per channel.
- What type of gate drive does the NVMFD5877NLT1G require? It requires a logic-level gate drive.
- Can the NVMFD5877NLT1G be used in automotive systems? Yes, it can be used in automotive and industrial systems due to its robust specifications.
- Where can I find detailed specifications for the NVMFD5877NLT1G? Detailed specifications can be found in the datasheet available on the onsemi website and other electronic component distributors like Mouser and TME.
- Is the NVMFD5877NLT1G Pb-Free? Yes, the NVMFD5877NLT1G is Pb-Free.
