BAS16VTB6_R1_00001
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Panjit International Inc. BAS16VTB6_R1_00001

Manufacturer No:
BAS16VTB6_R1_00001
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
SURFACE MOUNT SWITCHING DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS16VTB6_R1_00001 is a surface mount switching diode manufactured by Panjit International Inc. This component is designed for high-speed switching applications and is known for its ultra-fast switching speed and high conductance. The diode is packaged in a SOT-23 format, making it ideal for automatic insertion in surface mount technology (SMT) processes.

Key Specifications

Parameter Symbol Value Unit
Non-repetitive peak reverse voltage VRM 100 V
Repetitive peak reverse voltage / Working peak reverse voltage / DC blocking voltage VRRM / VRWM / VR 75 V
Peak forward surge current (tp = 1 s) IFSM 1 A
Peak forward surge current (tp = 1 μs) IFSM 2 A
Average forward current IF(AV) 250 mA
Forward current IF 350 mA
Power dissipation (on FR-4 board) Ptot 270 mW
Thermal resistance junction to ambient air RthJA 460 K/W
Junction temperature Tj 125 °C
Storage temperature range Tstg -65 to +150 °C
Operating temperature range Top -55 to +150 °C
Reverse recovery time trr 6 ns
Diode capacitance CD 1.5 pF

Key Features

  • Silicon epitaxial planar diode
  • Ultra-fast switching speed (≤ 4 ns)
  • Surface mount package (SOT-23) suitable for automatic insertion
  • High conductance
  • AEC-Q101 qualified available (for certain variants)
  • RoHS-compliant
  • Low forward voltage drop
  • High reverse voltage capability

Applications

  • High-speed switching circuits
  • Automotive electronics (AEC-Q101 qualified variants)
  • Consumer electronics
  • Industrial control systems
  • Communication devices

Q & A

  1. What is the maximum non-repetitive peak reverse voltage of the BAS16VTB6_R1_00001?

    The maximum non-repetitive peak reverse voltage is 100 V.

  2. What is the typical forward voltage drop at 10 mA?

    The typical forward voltage drop at 10 mA is 715 mV.

  3. What is the reverse recovery time of the diode?

    The reverse recovery time is approximately 6 ns.

  4. Is the BAS16VTB6_R1_00001 RoHS-compliant?
  5. What is the maximum junction temperature for this diode?

    The maximum junction temperature is 125 °C.

  6. What is the average forward current rating for this diode?

    The average forward current rating is 250 mA.

  7. What is the power dissipation on an FR-4 board?

    The power dissipation on an FR-4 board is 270 mW.

  8. What is the thermal resistance junction to ambient air?

    The thermal resistance junction to ambient air is 460 K/W.

  9. What are the storage and operating temperature ranges for this diode?

    The storage temperature range is -65 to +150 °C, and the operating temperature range is -55 to +150 °C.

  10. Is the BAS16VTB6_R1_00001 suitable for automotive applications?

Product Attributes

Diode Configuration:2 Independent
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io) (per Diode):150mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:2.5 µA @ 75 V
Operating Temperature - Junction:-55°C ~ 150°C
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
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