BSS8402DWQ-7
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Diodes Incorporated BSS8402DWQ-7

Manufacturer No:
BSS8402DWQ-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N/P-CH 60V/50V
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The BSS8402DWQ-7 is a complementary pair enhancement mode MOSFET produced by Diodes Incorporated. This device is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications. It is part of the BSS8402 series, which includes both N-channel and P-channel MOSFETs in a SOT363 package. The BSS8402DWQ-7 is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications.

Key Specifications

CharacteristicValueUnit
Drain-Source Voltage (VDS)60V (N-channel), -50V (P-channel)V
On-State Resistance (RDS(ON))13.5Ω @ VGS = 10V (N-channel), 10Ω @ VGS = -5V (P-channel)Ω
Drain Current (ID)115mA (N-channel), -130mA (P-channel)mA
Gate Threshold Voltage (VGS)±20VV
Input Capacitance (Ciss)50pF @ VDS = 25VpF
Output Capacitance (Coss)25pF @ VDS = 25VpF
Reverse Transfer Capacitance (Crss)5.0pF @ VDS = 25VpF
Turn-On Delay Time (tD(ON))7.0-20nsns
Turn-Off Delay Time (tD(OFF))11-20nsns
PackageSOT363
Operating Temperature-55°C to 150°C (TJ)°C

Key Features

  • Low On-Resistance (RDS(ON))
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Complementary Pair (N-channel and P-channel)
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities

Applications

  • General Purpose Interfacing Switch
  • Power Management Functions
  • Analog Switch
  • Automotive applications requiring specific change control

Q & A

  1. What is the BSS8402DWQ-7 MOSFET used for? The BSS8402DWQ-7 is used for high-efficiency power management applications, general purpose interfacing switches, and analog switches.
  2. What are the key specifications of the BSS8402DWQ-7? Key specifications include a drain-source voltage of 60V (N-channel) and -50V (P-channel), on-state resistance of 13.5Ω (N-channel) and 10Ω (P-channel), and drain current of 115mA (N-channel) and -130mA (P-channel).
  3. What package type does the BSS8402DWQ-7 come in? The BSS8402DWQ-7 comes in a SOT363 package.
  4. Is the BSS8402DWQ-7 suitable for automotive applications? Yes, it is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications.
  5. What are the environmental compliance standards for the BSS8402DWQ-7? The device is totally lead-free, fully RoHS compliant, halogen-free, and antimony-free.
  6. What is the operating temperature range of the BSS8402DWQ-7? The operating temperature range is -55°C to 150°C (TJ).
  7. What are the switching characteristics of the BSS8402DWQ-7? The device has a turn-on delay time of 7.0-20ns and a turn-off delay time of 11-20ns.
  8. Is the BSS8402DWQ-7 a complementary pair? Yes, it includes both N-channel and P-channel MOSFETs.
  9. What is the input capacitance of the BSS8402DWQ-7? The input capacitance (Ciss) is 50pF at VDS = 25V.
  10. Is the BSS8402DWQ-7 solderable? Yes, the terminals have a matte tin finish and are solderable per MIL-STD-202, Method 208.

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V, 50V
Current - Continuous Drain (Id) @ 25°C:115mA, 130mA
Rds On (Max) @ Id, Vgs:13.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Input Capacitance (Ciss) (Max) @ Vds:50pF @ 25V
Power - Max:200mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
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Same Series
BSS8402DWQ-7
BSS8402DWQ-7
MOSFET N/P-CH 60V/50V
BSS8402DW-7
BSS8402DW-7
MOSFET N/P-CH 60V/50V SC70-6

Similar Products

Part Number BSS8402DWQ-7 BSS8402DW-7
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Discontinued at Digi-Key
FET Type N and P-Channel N and P-Channel
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 60V, 50V 60V, 50V
Current - Continuous Drain (Id) @ 25°C 115mA, 130mA 115mA, 130mA
Rds On (Max) @ Id, Vgs 13.5Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V 50pF @ 25V
Power - Max 200mW 200mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 SOT-363

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