BSS138-7
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Diodes Incorporated BSS138-7

Manufacturer No:
BSS138-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 50V 200MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138-7-F is an N-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This transistor is part of the BSS138 series and is available in a SOT-23-3 package. It is designed to minimize on-state resistance while maintaining superior switching performance, making it ideal for high-efficiency power management applications.

Key Specifications

Parameter Value Unit
FET Type N-Channel
Drain-to-Source Voltage (Vdss) 50 V
Drain-Source On Resistance (RDS(on)) 3.5 Ω @ VGS = 10V
Rated Power Dissipation (PD) 300 mW
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount
Continuous Drain Current (ID) 200 mA
Thermal Resistance, Junction to Ambient (RθJA) 417 °C/W
Operating and Storage Temperature Range -55 to +150 °C

Key Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free (Green Device)

Applications

The BSS138-7-F is particularly suited for various applications, including:

  • System/Load Switches
  • Small Servo Motor Control
  • Power MOSFET Gate Drivers
  • Other switching applications in low voltage, low current scenarios

Q & A

  1. What is the drain-to-source voltage rating of the BSS138-7-F MOSFET?

    The drain-to-source voltage (Vdss) rating is 50V.

  2. What is the on-state resistance (RDS(on)) of the BSS138-7-F at VGS = 10V?

    The on-state resistance (RDS(on)) is 3.5Ω at VGS = 10V.

  3. What is the package style of the BSS138-7-F?

    The package style is SOT-23 (SC-59, TO-236).

  4. What is the continuous drain current (ID) rating of the BSS138-7-F?

    The continuous drain current (ID) rating is 200mA.

  5. What is the thermal resistance, junction to ambient (RθJA), of the BSS138-7-F?

    The thermal resistance, junction to ambient (RθJA), is 417°C/W.

  6. What is the operating and storage temperature range for the BSS138-7-F?

    The operating and storage temperature range is -55 to +150°C.

  7. Is the BSS138-7-F RoHS compliant?

    Yes, the BSS138-7-F is totally lead-free and fully RoHS compliant.

  8. What are some common applications for the BSS138-7-F?

    Common applications include system/load switches, small servo motor control, and power MOSFET gate drivers.

  9. What is the switching speed of the BSS138-7-F?

    The BSS138-7-F has fast switching speeds, with turn-on and turn-off delay times of approximately 20 ns each.

  10. Is the BSS138-7-F suitable for automotive applications?

    While the BSS138-7-F is not specifically automotive-compliant, an automotive-compliant version (BSS138Q) is available under a separate datasheet.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
BSS138TC
BSS138TC
MOSFET N-CH 50V 200MA SOT23-3

Similar Products

Part Number BSS138-7 BSS138K-7 BSS138W-7 BSS138-T
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated onsemi
Product Status Discontinued at Digi-Key Active Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) 310mA (Ta) 200mA (Ta) 220mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 0.95 nC @ 10 V - 2.4 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 23.2 pF @ 25 V 50 pF @ 10 V 27 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 300mW (Ta) 380mW 200mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-323 EFCP1313-4CC-037
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 4-XFBGA

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IC COMPARATOR DUAL DIFF TSSOP-8