Overview
The BSS138TC, produced by Diodes Incorporated, is an N-Channel enhancement mode field effect transistor (FET) designed using high cell density DMOS technology. This device is optimized for low voltage and low current applications, offering superior switching performance and low on-state resistance. It is particularly suited for systems requiring high efficiency and reliability, such as small servo motor control, power MOSFET gate drivers, and various switching applications.
Key Specifications
| Characteristic | Symbol | Value | Unit | Test Conditions |
|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDSS | 50 | V | VGS = 0 V, ID = 250 µA |
| Gate-Source Voltage | VGSS | ±20 | V | Continuous |
| Drain Current Continuous | ID | 200 | mA | TA = +25°C |
| Pulsed Drain Current | IDM | 1 | A | 10µs Pulse Duty Cycle = 1% |
| Static Drain-Source On-Resistance | RDS(ON) | 3.5 Ω @ VGS = 10 V | Ω | VGS = 10 V, ID = 0.22 A |
| Gate Threshold Voltage | VGS(th) | 0.8 - 1.5 | V | VDS = VGS, ID = 1 mA |
| Turn-On Delay Time | tD(ON) | 2.5 - 5 ns | ns | VDD = 30 V, ID = 0.29 A, VGS = 10 V, RGEN = 6 Ω |
| Turn-Off Delay Time | tD(OFF) | 20 - 36 ns | ns | VDD = 30 V, ID = 0.29 A, VGS = 10 V, RGEN = 6 Ω |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C |
Key Features
- Low On-Resistance: RDS(ON) = 3.5 Ω @ VGS = 10 V, ensuring high efficiency in power management applications.
- Low Gate Threshold Voltage: VGS(th) = 0.8 - 1.5 V, making it suitable for logic level applications.
- Low Input Capacitance: Input capacitance of 27 pF, contributing to fast switching speeds.
- Fast Switching Speed: Turn-on and turn-off delay times of 2.5 - 5 ns and 20 - 36 ns, respectively.
- Low Input/Output Leakage: Minimal leakage currents, enhancing overall device reliability.
- Environmentally Friendly: Totally lead-free, fully RoHS compliant, halogen and antimony free, and qualified to AEC-Q101 standards for high reliability.
Applications
- Small Servo Motor Control: Ideal for controlling small servo motors due to its low on-state resistance and fast switching capabilities.
- Power MOSFET Gate Drivers: Suitable for driving power MOSFETs in various power management circuits.
- Switching Applications: Used in a variety of switching applications requiring low voltage and low current.
- High-Efficiency Power Management: Optimized for high-efficiency power-management applications.
Q & A
- What is the maximum drain-source breakdown voltage of the BSS138TC?
The maximum drain-source breakdown voltage (VDSS) is 50 V.
- What is the typical on-state resistance of the BSS138TC at VGS = 10 V?
The typical on-state resistance (RDS(ON)) at VGS = 10 V is 3.5 Ω.
- What is the continuous drain current rating of the BSS138TC?
The continuous drain current (ID) rating is 200 mA.
- What is the gate threshold voltage range of the BSS138TC?
The gate threshold voltage (VGS(th)) range is 0.8 - 1.5 V.
- What are the typical turn-on and turn-off delay times of the BSS138TC?
The typical turn-on delay time (tD(ON)) is 2.5 - 5 ns, and the typical turn-off delay time (tD(OFF)) is 20 - 36 ns.
- What is the operating temperature range of the BSS138TC?
The operating and storage temperature range is -55 to +150 °C.
- Is the BSS138TC environmentally friendly?
Yes, it is totally lead-free, fully RoHS compliant, halogen and antimony free.
- What are some common applications of the BSS138TC?
Common applications include small servo motor control, power MOSFET gate drivers, and other switching applications.
- What is the input capacitance of the BSS138TC?
The input capacitance (Ciss) is 27 pF.
- Is the BSS138TC qualified for high reliability standards?
Yes, it is qualified to AEC-Q101 standards for high reliability.
