BSS138TA
  • Share:

Diodes Incorporated BSS138TA

Manufacturer No:
BSS138TA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 50V 200MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138TA is an N-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This device is designed using DMOS technology, which ensures low on-state resistance and provides rugged, reliable, and fast switching performance. The BSS138TA is packaged in a SOT-23 (SC-59, TO-236) surface mount package, making it suitable for a variety of applications where space is limited.

Key Specifications

Attribute Value Unit
FET Type N-Channel
Drain-to-Source Voltage (Vdss) 50 V
Drain-Source On Resistance (RDS(on)) ≤ 3.5 Ω @ VGS = 5V
Maximum Continuous Drain Current (ID) 200 mA
Pulsed Drain Current (IDM) 800 mA
Power Dissipation (PD) 350 mW
Thermal Resistance, Junction to Ambient (RθJA) 357 °C/W
Operating and Storage Temperature Range -55 to +150 °C
Gate-Source Voltage (VGSS) ±20 V
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount

Key Features

  • Totally Lead-Free and Fully RoHS Compliant, Halogen and Antimony Free, making it an environmentally friendly option.
  • Qualified to AEC-Q101 Standards for High Reliability, ensuring robust performance in demanding applications.
  • Low On-State Resistance (RDS(on) ≤ 3.5Ω @ VGS = 5V), which minimizes power losses and enhances efficiency.
  • Fast Switching Performance, with turn-on delay times as low as 10 ns and turn-off delay times as low as 15 ns.
  • Wide Operating Temperature Range (-55°C to +150°C), making it suitable for various environmental conditions.
  • Matte Tin Finish on terminals, ensuring good solderability per MIL-STD-202, Method 208.

Applications

  • Small servo motor control: The BSS138TA is well-suited for controlling small servo motors due to its low on-state resistance and fast switching capabilities.
  • Power MOSFET gate drivers: Its enhancement mode operation and low RDS(on) make it ideal for driving power MOSFETs in various applications.
  • Switching applications: The device is suitable for general switching applications where low voltage and low current are required.
  • Automotive and industrial control systems: Given its high reliability and compliance with AEC-Q101 standards, it can be used in automotive and industrial control systems).

Q & A

  1. What is the maximum drain-to-source voltage (Vdss) of the BSS138TA?

    The maximum drain-to-source voltage (Vdss) of the BSS138TA is 50V).

  2. What is the typical on-state resistance (RDS(on)) of the BSS138TA?

    The typical on-state resistance (RDS(on)) of the BSS138TA is ≤ 3.5Ω @ VGS = 5V).

  3. What is the maximum continuous drain current (ID) of the BSS138TA?

    The maximum continuous drain current (ID) of the BSS138TA is 200mA).

  4. Is the BSS138TA RoHS compliant?

    Yes, the BSS138TA is totally Lead-Free and Fully RoHS Compliant).

  5. What is the operating temperature range of the BSS138TA?

    The operating temperature range of the BSS138TA is -55°C to +150°C).

  6. What is the package style of the BSS138TA?

    The BSS138TA is packaged in a SOT-23 (SC-59, TO-236) surface mount package).

  7. What are some typical applications of the BSS138TA?

    The BSS138TA is typically used in small servo motor control, power MOSFET gate drivers, and other switching applications).

  8. Is the BSS138TA qualified for automotive applications?

    Yes, the BSS138TA is qualified to AEC-Q101 Standards for High Reliability, making it suitable for automotive applications).

  9. What is the thermal resistance from junction to ambient (RθJA) of the BSS138TA?

    The thermal resistance from junction to ambient (RθJA) of the BSS138TA is 357 °C/W).

  10. What is the maximum power dissipation (PD) of the BSS138TA?

    The maximum power dissipation (PD) of the BSS138TA is 350 mW).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):300mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.45
244

Please send RFQ , we will respond immediately.

Similar Products

Part Number BSS138TA BSS138TC
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Not For New Designs Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 300mW (Ta) 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P

Related Product By Brand

BAV23CQ-7-F
BAV23CQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAV23S-7
BAV23S-7
Diodes Incorporated
DIODE ARRAY GP 200V 400MA SOT23
BAT54LP-7B
BAT54LP-7B
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA 2DFN
BZX84C12S-7-F
BZX84C12S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 12V SOT363
BZX84C3V9Q-7-F
BZX84C3V9Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
BC847BWQ-13-F
BC847BWQ-13-F
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT32
BC847AW-7-F
BC847AW-7-F
Diodes Incorporated
TRANS NPN 45V 0.1A SOT323
BC847BLD-7
BC847BLD-7
Diodes Incorporated
TRANS NPN 45V 0.2A SOT23-3
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23
2N7002T-13-G
2N7002T-13-G
Diodes Incorporated
MOSFET N-CH 60V SOT523
LMV324TSG-13
LMV324TSG-13
Diodes Incorporated
IC OPAMP GP 4 CIRCUIT 14TSSOP
LM2903AQTH-13
LM2903AQTH-13
Diodes Incorporated
IC COMPARATOR DUAL DIFF TSSOP-8