BSS138-T
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onsemi BSS138-T

Manufacturer No:
BSS138-T
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 50V 220MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138 is an N-Channel logic level enhancement mode field effect transistor produced by onsemi. This device is designed using onsemi’s proprietary high cell density DMOS technology, which minimizes on-state resistance and provides rugged, reliable, and fast switching performance. The BSS138 is particularly suited for low voltage, low current applications and is encased in a standard SOT-23 surface mount package, offering both durability and a space-saving form factor.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (Vds)50V
Gate-Source Voltage (Vgs)±20V
Continuous Drain Current (ID)0.22A
Drain-Source On Resistance (Rds(on)) @ Vgs = 10V3.5Ω
Drain-Source On Resistance (Rds(on)) @ Vgs = 4.5V6.0Ω
Maximum Power Dissipation360mW
Operating Junction Temperature Range-55 to 150°C
Input Capacitance (Ciss)27pF
Turn-On Delay Time2.5ns
Turn-On Rise Time9ns

Key Features

  • Low on-state resistance of 3.5Ω at Vgs = 10V and 6.0Ω at Vgs = 4.5V, reducing power loss during operation.
  • High cell density DMOS technology for efficient and reliable performance.
  • Fast switching and reverse body recovery.
  • Compact SOT-23 surface mount package for space-saving designs.
  • Wide operating junction temperature range from -55°C to 150°C.

Applications

The BSS138 is ideal for various low voltage, low current applications, including:

  • Small servo motor control.
  • Power MOSFET gate drivers.
  • High efficiency switched mode power supplies.
  • Other switching applications where minimizing power loss and ensuring reliable performance are crucial.

Q & A

  1. What is the maximum drain-source voltage of the BSS138?
    The maximum drain-source voltage (Vds) of the BSS138 is 50V.
  2. What is the continuous drain current rating of the BSS138?
    The continuous drain current (ID) rating of the BSS138 is 0.22 A.
  3. What is the on-state resistance of the BSS138 at Vgs = 10V?
    The on-state resistance (Rds(on)) of the BSS138 at Vgs = 10V is 3.5Ω.
  4. What is the operating junction temperature range of the BSS138?
    The operating junction temperature range of the BSS138 is from -55°C to 150°C.
  5. What package type is the BSS138 available in?
    The BSS138 is available in a standard SOT-23 surface mount package.
  6. What are some typical applications of the BSS138?
    The BSS138 is typically used in small servo motor control, power MOSFET gate drivers, and high efficiency switched mode power supplies.
  7. What is the maximum power dissipation of the BSS138?
    The maximum power dissipation of the BSS138 is 360 mW.
  8. What is the input capacitance (Ciss) of the BSS138?
    The input capacitance (Ciss) of the BSS138 is 27 pF.
  9. What is the turn-on delay time of the BSS138?
    The turn-on delay time of the BSS138 is 2.5 ns.
  10. Is the BSS138 RoHS compliant?
    Yes, the BSS138 is RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:220mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:2.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:27 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:EFCP1313-4CC-037
Package / Case:4-XFBGA
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Similar Products

Part Number BSS138-T BSS138-TP BSS138-7
Manufacturer onsemi Micro Commercial Co Diodes Incorporated
Product Status Obsolete Active Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 220mA (Ta) 220mA (Tj) 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 1mA 1.5V @ 1mA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.4 nC @ 10 V - -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 27 pF @ 25 V 60 pF @ 25 V 50 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 360mW (Ta) 350mW 300mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package EFCP1313-4CC-037 SOT-23 SOT-23-3
Package / Case 4-XFBGA TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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