STP28N60M2
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STMicroelectronics STP28N60M2

Manufacturer No:
STP28N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 24A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STP28N60M2 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high efficiency and reliability in various power management applications. With its robust characteristics, it is particularly suited for use in flyback converters, LED lighting, and other high-voltage power systems.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 600 V
ID (Drain Current) 22 A
RDS(on) (On-Resistance) 0.135 Ω (typical)
Package TO-220
Avalanche Tested 100% tested
Zener Protection Yes

Key Features

  • High voltage rating of 600 V, making it suitable for high-voltage applications.
  • Low on-resistance (RDS(on)) of 0.135 Ω, enhancing efficiency and reducing power losses.
  • High drain current capability of 22 A, supporting high-power applications.
  • 100% avalanche tested, ensuring robustness and reliability under extreme conditions.
  • Zener protection, providing additional safety against voltage spikes.
  • MDmesh M2 technology, offering improved performance and thermal management.

Applications

  • Flyback converters: Ideal for use in flyback converter designs due to its high voltage and current handling capabilities.
  • LED lighting: Suitable for LED lighting systems that require high efficiency and reliability.
  • Power supplies: Used in various power supply applications where high voltage and current are necessary.
  • Motor control: Can be used in motor control circuits that require high power and efficiency.
  • Industrial power systems: Applicable in industrial power systems that demand robust and reliable power management.

Q & A

  1. What is the maximum drain-source voltage of the STP28N60M2?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance of the STP28N60M2?

    The typical on-resistance (RDS(on)) is 0.135 Ω.

  3. What is the maximum drain current of the STP28N60M2?

    The maximum drain current (ID) is 22 A.

  4. What package type is the STP28N60M2 available in?

    The STP28N60M2 is available in the TO-220 package.

  5. Is the STP28N60M2 avalanche tested?

    Yes, the STP28N60M2 is 100% avalanche tested.

  6. Does the STP28N60M2 have Zener protection?

    Yes, the STP28N60M2 includes Zener protection.

  7. What technology is used in the STP28N60M2?

    The STP28N60M2 uses MDmesh M2 technology.

  8. What are some common applications of the STP28N60M2?

    Common applications include flyback converters, LED lighting, power supplies, motor control, and industrial power systems.

  9. Why is the STP28N60M2 suitable for high-voltage applications?

    The STP28N60M2 is suitable for high-voltage applications due to its high voltage rating of 600 V and low on-resistance.

  10. How does the MDmesh M2 technology benefit the STP28N60M2?

    The MDmesh M2 technology enhances the performance and thermal management of the STP28N60M2, making it more efficient and reliable.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1370 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):170W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP28N60M2 STP28N65M2 STP18N60M2 STP24N60M2 STP26N60M2 STP28N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc) 20A (Tc) 13A (Tc) 18A (Tc) 20A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 12A, 10V 180mOhm @ 10A, 10V 280mOhm @ 6.5A, 10V 190mOhm @ 9A, 10V - 160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA - 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V 35 nC @ 10 V 21.5 nC @ 10 V 29 nC @ 10 V - 34 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V - ±25V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 100 V 1440 pF @ 100 V 791 pF @ 100 V 1060 pF @ 100 V - 1500 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 170W (Tc) 170W (Tc) 110W (Tc) 150W (Tc) 169W (Tc) 170W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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