Overview
The STB13N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer low on-resistance and optimized switching characteristics, making it highly suitable for high-efficiency converters and demanding switching applications. The MOSFET is packaged in a D²PAK (TO-263) type A package, which is environmentally compliant and available in various ECOPACK grades.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Order Code | STB13N60M2 | |
| VDS at TJ max. | 650 | V |
| RDS(on) max. | 380 | mΩ |
| ID (continuous) at TC = 25 °C | 11 | A |
| ID (continuous) at TC = 100 °C | 7 | A |
| IDM (pulsed) | 44 | A |
| PTOT at TC = 25 °C | 110 | W |
| VGS | ±25 | V |
| Tstg | -55 to 150 | °C |
| RthJC | 1.14 | °C/W |
| RthJA | 30 | °C/W |
| V(BR)DSS | 600 | V |
| VGS(th) | 2-4 | V |
| Ciss | 580 | pF |
| Coss | 32 | pF |
| Qg | 17 | nC |
Key Features
- Extremely low gate charge
- Excellent output capacitance (Coss) profile
- 100% avalanche tested
- Zener-protected
- Low on-resistance and optimized switching characteristics
- High efficiency in switching applications
- Environmentally compliant ECOPACK packaging
Applications
- Switching applications
- High-efficiency converters
- Power management systems
- Industrial and automotive power systems
- DC-DC converters and power supplies
Q & A
- What is the maximum drain-source voltage (VDS) of the STB13N60M2?
The maximum drain-source voltage (VDS) is 650 V.
- What is the typical on-resistance (RDS(on)) of the STB13N60M2?
The typical on-resistance (RDS(on)) is 350 mΩ.
- What is the continuous drain current (ID) at 25 °C?
The continuous drain current (ID) at 25 °C is 11 A.
- What is the maximum total power dissipation (PTOT) at 25 °C?
The maximum total power dissipation (PTOT) at 25 °C is 110 W.
- What is the gate-source voltage (VGS) range?
The gate-source voltage (VGS) range is ±25 V.
- What is the thermal resistance from junction to case (RthJC)?
The thermal resistance from junction to case (RthJC) is 1.14 °C/W.
- What is the typical input capacitance (Ciss)?
The typical input capacitance (Ciss) is 580 pF.
- What is the typical output capacitance (Coss)?
The typical output capacitance (Coss) is 32 pF.
- What is the total gate charge (Qg)?
The total gate charge (Qg) is 17 nC.
- In what package is the STB13N60M2 available?
The STB13N60M2 is available in a D²PAK (TO-263) type A package.
