Overview
The STD13N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer low on-resistance and optimized switching characteristics, making it highly suitable for high-efficiency converters and demanding switching applications. The MOSFET features a strip layout and an improved vertical structure, which enhances its performance and reliability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 650 | V |
| RDS(on) (On-Resistance) | 380 mΩ (max) | mΩ |
| ID (Drain Current, continuous at TC = 25 °C) | 11 A | A |
| IDM (Drain Current, pulsed) | 44 A | A |
| PTOT (Total Power Dissipation at TC = 25 °C) | 110 W | W |
| VGS (Gate-Source Voltage) | ±25 V | V |
| Tstg (Storage Temperature Range) | -55 to 150 °C | °C |
| TJ (Operating Junction Temperature Range) | -55 to 150 °C | °C |
| RthJC (Thermal Resistance, Junction-to-Case) | 1.14 °C/W | °C/W |
| RthJA (Thermal Resistance, Junction-to-Ambient) | 50 °C/W | °C/W |
Key Features
- Extremely low gate charge
- Excellent output capacitance (Coss) profile
- 100% avalanche tested
- Zener-protected gate
- Low on-resistance and optimized switching characteristics
- High efficiency in high-frequency switching applications
Applications
The STD13N60M2 is particularly suited for high-efficiency converters and various switching applications, including but not limited to:
- Switch-mode power supplies
- DC-DC converters
- Motor control and drive systems
- High-frequency switching circuits
- Aerospace and automotive systems requiring high reliability and efficiency
Q & A
- What is the maximum drain-source voltage (VDS) of the STD13N60M2?
The maximum drain-source voltage (VDS) is 650 V.
- What is the typical on-resistance (RDS(on)) of the STD13N60M2?
The typical on-resistance (RDS(on)) is 380 mΩ.
- What is the maximum continuous drain current (ID) at TC = 25 °C?
The maximum continuous drain current (ID) at TC = 25 °C is 11 A.
- What is the maximum pulsed drain current (IDM) of the STD13N60M2?
The maximum pulsed drain current (IDM) is 44 A.
- What is the thermal resistance from junction to case (RthJC) of the STD13N60M2?
The thermal resistance from junction to case (RthJC) is 1.14 °C/W.
- What is the storage temperature range for the STD13N60M2?
The storage temperature range is -55 to 150 °C.
- What are the key features of the STD13N60M2?
The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, and Zener-protected gate.
- What are the typical applications of the STD13N60M2?
Typical applications include switch-mode power supplies, DC-DC converters, motor control and drive systems, and high-frequency switching circuits.
- What package types are available for the STD13N60M2?
The STD13N60M2 is available in DPAK (TO-252) type A2 and C3 packages.
- Is the STD13N60M2 environmentally compliant?
Yes, the device is offered in ECOPACK packages, which meet various environmental compliance standards.
