STD13N60DM2
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STMicroelectronics STD13N60DM2

Manufacturer No:
STD13N60DM2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 11A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD13N60DM2 is a high-voltage N-channel Power MOSFET produced by STMicroelectronics. It is part of the MDmesh DM2 fast-recovery diode series, known for its very low recovery charge (Qrr) and time (trr). This device is designed to offer high performance and efficiency in various power management applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)600 V
Continuous Drain Current (Id)11 A (Tc = 25°C)
Pulse Drain Current (Idm)44 A
Power Dissipation (Pd)110 W (Tc = 25°C)
Package TypeDPAK (Surface Mount)
ESD ProtectionAvailable

Key Features

  • High-voltage N-channel Power MOSFET with fast-recovery body diode
  • Very low recovery charge (Qrr) and time (trr)
  • High continuous drain current and pulse drain current capabilities
  • High power dissipation rating
  • Surface mount DPAK package for ease of integration
  • ESD protection for enhanced reliability

Applications

The STD13N60DM2 is suitable for a variety of high-power applications, including:

  • Power supplies and DC-DC converters
  • Motor control and drives
  • High-frequency switching applications
  • Industrial and automotive systems requiring high reliability and efficiency

Q & A

  1. What is the voltage rating of the STD13N60DM2?
    The voltage rating of the STD13N60DM2 is 600 V.
  2. What is the continuous drain current of the STD13N60DM2?
    The continuous drain current is 11 A at Tc = 25°C.
  3. What is the pulse drain current of the STD13N60DM2?
    The pulse drain current is 44 A.
  4. What is the power dissipation rating of the STD13N60DM2?
    The power dissipation rating is 110 W at Tc = 25°C.
  5. What package type does the STD13N60DM2 come in?
    The STD13N60DM2 comes in a surface mount DPAK package.
  6. Does the STD13N60DM2 have ESD protection?
    Yes, the STD13N60DM2 has ESD protection.
  7. What are some typical applications of the STD13N60DM2?
    Typical applications include power supplies, DC-DC converters, motor control, high-frequency switching, and industrial/automotive systems.
  8. What series does the STD13N60DM2 belong to?
    The STD13N60DM2 belongs to the MDmesh DM2 fast-recovery diode series.
  9. What are the key benefits of the low recovery charge and time in the STD13N60DM2?
    The low recovery charge and time enhance the efficiency and performance of the device in high-frequency switching applications.
  10. Where can I find detailed specifications and datasheets for the STD13N60DM2?
    Detailed specifications and datasheets can be found on the STMicroelectronics official website, as well as on distributor websites like Digi-Key and TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:365mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:730 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD13N60DM2 STD13N60M2 STD10N60DM2 STD11N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 11A (Tc) 8A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 365mOhm @ 5.5A, 10V 380mOhm @ 5.5A, 10V 530mOhm @ 4A, 10V 420mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 17 nC @ 10 V 15 nC @ 10 V 16.5 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 730 pF @ 100 V 580 pF @ 100 V 529 pF @ 100 V 614 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 110W (Tc) 110W (Tc) 109W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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