STD10N60DM2
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STMicroelectronics STD10N60DM2

Manufacturer No:
STD10N60DM2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 8A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The STD10N60DM2 is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the MDmesh DM2 fast-recovery diode series. This device is designed to offer very low recovery charge (Qrr) and recovery time (trr), making it suitable for high-efficiency applications. The STD10N60DM2 is packaged in a DPAK (TO-252) package, which is compact and thermally efficient.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
ID (Drain Current) 8 A
RDS(on) (On-State Resistance) 440 mΩ (typ.)
Qrr (Recovery Charge) Very low -
trr (Recovery Time) Very low -
Package DPAK (TO-252) -

Key Features

  • High voltage rating of 600 V, making it suitable for high-voltage applications.
  • Low on-state resistance (RDS(on)) of 440 mΩ (typ.), which reduces power losses.
  • Very low recovery charge (Qrr) and recovery time (trr), enhancing efficiency in switching applications.
  • Compact DPAK (TO-252) package for good thermal performance and space efficiency.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching applications.
  • Industrial and automotive systems requiring high reliability and efficiency.

Q & A

  1. What is the voltage rating of the STD10N60DM2?

    The voltage rating of the STD10N60DM2 is 600 V.

  2. What is the typical on-state resistance of the STD10N60DM2?

    The typical on-state resistance (RDS(on)) is 440 mΩ.

  3. What package type is the STD10N60DM2 available in?

    The STD10N60DM2 is available in a DPAK (TO-252) package.

  4. What are the key benefits of the low recovery charge and time in the STD10N60DM2?

    The low recovery charge (Qrr) and recovery time (trr) enhance the efficiency and performance in high-frequency switching applications.

  5. What are some common applications for the STD10N60DM2?

    Common applications include power supplies, DC-DC converters, motor control systems, and high-frequency switching applications.

  6. Is the STD10N60DM2 suitable for automotive applications?

    Yes, it can be used in automotive systems due to its high reliability and efficiency.

  7. What is the maximum drain current rating of the STD10N60DM2?

    The maximum drain current (ID) rating is 8 A.

  8. How does the MDmesh DM2 technology benefit the STD10N60DM2?

    The MDmesh DM2 technology provides very low recovery charge and time, which improves the overall efficiency and performance of the MOSFET.

  9. Is the STD10N60DM2 available from major distributors?

    Yes, it is available from major electronic component distributors such as Digi-Key, Mouser, and Avnet.

  10. What are the thermal considerations for the STD10N60DM2?

    The DPAK package provides good thermal performance, but proper heat sinking and thermal management are still necessary for optimal operation.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:530mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:529 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):109W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD10N60DM2 STD13N60DM2 STD10N60M2 STD11N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 600 V 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 11A (Tc) 7.5A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 530mOhm @ 4A, 10V 365mOhm @ 5.5A, 10V 600mOhm @ 3A, 10V 420mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 19 nC @ 10 V 13.5 nC @ 10 V 16.5 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 529 pF @ 100 V 730 pF @ 100 V 400 pF @ 100 V 614 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 109W (Tc) 110W (Tc) 85W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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