Overview
The STD10N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer low on-resistance and optimized switching characteristics, making it highly suitable for high-efficiency converters and demanding switching applications. Available in DPAK (TO-252) packaging, the STD10N60M2 combines a vertical structure with a strip layout to achieve some of the world's lowest on-resistance and gate charge values.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS @ TJ max. | 650 | V |
| RDS(on) max. | 0.60 | Ω |
| ID (continuous) at TC = 25 °C | 7.5 | A |
| ID (continuous) at TC = 100 °C | 4.9 | A |
| IDM (pulsed) | 30 | A |
| PTOT (total power dissipation) at TC = 25 °C | 85 | W |
| VGS (gate-source voltage) | ±25 | V |
| Tstg (storage temperature range) | -55 to 150 | °C |
| RthJC (thermal resistance, junction-to-case) | 1.47 | °C/W |
| RthJA (thermal resistance, junction-to-ambient) | 62.5 | °C/W |
| Qg (total gate charge) | 13.5 | nC |
| td(on) (turn-on delay time) | 8.8 | ns |
| tr (rise time) | 8 | ns |
| td(off) (turn-off delay time) | 32.5 | ns |
| tf (fall time) | 13.2 | ns |
Key Features
- Extremely low gate charge
- Excellent output capacitance (Coss) profile
- 100% avalanche tested
- Zener-protected
- Low on-resistance and optimized switching characteristics
- Available in DPAK (TO-252) packaging
Applications
The STD10N60M2 is primarily used in switching applications, including but not limited to:
- High-efficiency converters
- Power supplies
- Motor control systems
- Industrial power systems
- Automotive systems requiring high reliability and efficiency
Q & A
- What is the maximum drain current of the STD10N60M2 at 25°C?
The maximum continuous drain current at 25°C is 7.5 A.
- What is the maximum gate-source voltage for the STD10N60M2?
The maximum gate-source voltage is ±25 V.
- What are the thermal resistance values for the STD10N60M2 in DPAK packaging?
The thermal resistance from junction to case (RthJC) is 1.47 °C/W, and from junction to ambient (RthJA) is 62.5 °C/W.
- What is the total gate charge of the STD10N60M2?
The total gate charge (Qg) is 13.5 nC.
- What are the typical turn-on and turn-off delay times for the STD10N60M2?
The typical turn-on delay time (td(on)) is 8.8 ns, and the typical turn-off delay time (td(off)) is 32.5 ns.
- Is the STD10N60M2 avalanche tested?
- What is the storage temperature range for the STD10N60M2?
The storage temperature range is -55 to 150 °C.
- What are the typical rise and fall times for the STD10N60M2?
The typical rise time (tr) is 8 ns, and the typical fall time (tf) is 13.2 ns.
- What is the maximum drain current (pulsed) for the STD10N60M2?
The maximum pulsed drain current is 30 A.
- What are some common applications of the STD10N60M2?
