Overview
The STD16N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high efficiency and reliability in various power management applications. The MOSFET features a strip layout and an improved vertical structure, which enhances its on-resistance and switching characteristics, making it suitable for demanding high-efficiency converters.
Key Specifications
Parameter | Value | Unit |
---|---|---|
VDS (Drain-Source Voltage) | 600 | V |
RDS(on) (Static Drain-Source On-Resistance) | 0.280 (typ.), 0.320 (max.) | Ω |
ID (Drain Current, continuous at TC = 25 °C) | 12 | A |
ID (Drain Current, continuous at TC = 100 °C) | 7.6 | A |
IDM (Drain Current, pulsed) | 48 | A |
PTOT (Total Dissipation at TC = 25 °C) | 110 | W |
Tj (Max. Operating Junction Temperature) | 150 | °C |
Tstg (Storage Temperature) | -55 to 150 | °C |
VGS (Gate-Source Voltage) | ±25 | V |
Qg (Total Gate Charge) | 19 | nC |
Ciss (Input Capacitance) | 700 | pF |
Coss (Output Capacitance) | 38 | pF |
Crss (Reverse Transfer Capacitance) | 1.2 | pF |
Key Features
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected gate
- Low on-resistance and optimized switching characteristics
- High efficiency in demanding converters
- MDmesh M2 technology for improved performance
Applications
The STD16N60M2 is particularly suited for switching applications, including but not limited to:
- High-efficiency power converters
- Switch-mode power supplies (SMPS)
- Motor control and drive systems
- Power factor correction (PFC) circuits
- Industrial and automotive power management systems
Q & A
- What is the maximum drain-source voltage (VDS) of the STD16N60M2?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance (RDS(on)) of the STD16N60M2?
The typical on-resistance (RDS(on)) is 0.280 Ω.
- What is the maximum continuous drain current (ID) at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 12 A.
- What is the maximum operating junction temperature (Tj) of the STD16N60M2?
The maximum operating junction temperature (Tj) is 150 °C.
- What is the storage temperature range for the STD16N60M2?
The storage temperature range is from -55 °C to 150 °C.
- What are the key features of the MDmesh M2 technology used in the STD16N60M2?
The MDmesh M2 technology offers extremely low gate charge, excellent output capacitance profile, 100% avalanche testing, and Zener-protected gates.
- In what types of applications is the STD16N60M2 commonly used?
The STD16N60M2 is commonly used in switching applications, including high-efficiency power converters, SMPS, motor control, and power factor correction circuits.
- What is the package type of the STD16N60M2?
The STD16N60M2 is available in a DPAK (TO-252) package.
- What is the thermal resistance junction-case (Rthj-case) of the STD16N60M2?
The thermal resistance junction-case (Rthj-case) is a maximum of 1.14 °C/W.
- How is the gate charge of the STD16N60M2 specified?
The total gate charge (Qg) is specified as 19 nC.