STD16N60M2
  • Share:

STMicroelectronics STD16N60M2

Manufacturer No:
STD16N60M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 12A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD16N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high efficiency and reliability in various power management applications. The MOSFET features a strip layout and an improved vertical structure, which enhances its on-resistance and switching characteristics, making it suitable for demanding high-efficiency converters.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
RDS(on) (Static Drain-Source On-Resistance) 0.280 (typ.), 0.320 (max.) Ω
ID (Drain Current, continuous at TC = 25 °C) 12 A
ID (Drain Current, continuous at TC = 100 °C) 7.6 A
IDM (Drain Current, pulsed) 48 A
PTOT (Total Dissipation at TC = 25 °C) 110 W
Tj (Max. Operating Junction Temperature) 150 °C
Tstg (Storage Temperature) -55 to 150 °C
VGS (Gate-Source Voltage) ±25 V
Qg (Total Gate Charge) 19 nC
Ciss (Input Capacitance) 700 pF
Coss (Output Capacitance) 38 pF
Crss (Reverse Transfer Capacitance) 1.2 pF

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (COSS) profile
  • 100% avalanche tested
  • Zener-protected gate
  • Low on-resistance and optimized switching characteristics
  • High efficiency in demanding converters
  • MDmesh M2 technology for improved performance

Applications

The STD16N60M2 is particularly suited for switching applications, including but not limited to:

  • High-efficiency power converters
  • Switch-mode power supplies (SMPS)
  • Motor control and drive systems
  • Power factor correction (PFC) circuits
  • Industrial and automotive power management systems

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STD16N60M2?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance (RDS(on)) of the STD16N60M2?

    The typical on-resistance (RDS(on)) is 0.280 Ω.

  3. What is the maximum continuous drain current (ID) at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 12 A.

  4. What is the maximum operating junction temperature (Tj) of the STD16N60M2?

    The maximum operating junction temperature (Tj) is 150 °C.

  5. What is the storage temperature range for the STD16N60M2?

    The storage temperature range is from -55 °C to 150 °C.

  6. What are the key features of the MDmesh M2 technology used in the STD16N60M2?

    The MDmesh M2 technology offers extremely low gate charge, excellent output capacitance profile, 100% avalanche testing, and Zener-protected gates.

  7. In what types of applications is the STD16N60M2 commonly used?

    The STD16N60M2 is commonly used in switching applications, including high-efficiency power converters, SMPS, motor control, and power factor correction circuits.

  8. What is the package type of the STD16N60M2?

    The STD16N60M2 is available in a DPAK (TO-252) package.

  9. What is the thermal resistance junction-case (Rthj-case) of the STD16N60M2?

    The thermal resistance junction-case (Rthj-case) is a maximum of 1.14 °C/W.

  10. How is the gate charge of the STD16N60M2 specified?

    The total gate charge (Qg) is specified as 19 nC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:320mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.12
154

Please send RFQ , we will respond immediately.

Similar Products

Part Number STD16N60M2 STD16N65M2 STD16N60M6 STD10N60M2 STD12N60M2 STD13N60M2 STD16N50M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 11A (Tc) 12A (Tc) 7.5A (Tc) 9A (Tc) 11A (Tc) 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 320mOhm @ 6A, 10V 360mOhm @ 5.5A, 10V 320mOhm @ 6A, 10V 600mOhm @ 3A, 10V 450mOhm @ 4.5A, 10V 380mOhm @ 5.5A, 10V 280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4.75V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 19.5 nC @ 10 V 16.7 nC @ 10 V 13.5 nC @ 10 V 16 nC @ 10 V 17 nC @ 10 V 19.5 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 100 V 718 pF @ 100 V 575 pF @ 100 V 400 pF @ 100 V 538 pF @ 100 V 580 pF @ 100 V 710 pF @ 100 V
FET Feature - - - - - - -
Power Dissipation (Max) 110W (Tc) 110W (Tc) 110W (Tc) 85W (Tc) 85W (Tc) 110W (Tc) 110W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK D-PAK (TO-252) DPAK DPAK DPAK TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

SMA6T28CAY
SMA6T28CAY
STMicroelectronics
TVS DIODE 24VWM 44.3VC SMA
STPS30H100CT
STPS30H100CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 100V TO220
TMMDB3TG
TMMDB3TG
STMicroelectronics
DIAC 30-34V 2A MINIMELF
STF13N60M2
STF13N60M2
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
STH410N4F7-6AG
STH410N4F7-6AG
STMicroelectronics
MOSFET N-CH 40V 200A H2PAK-6
STM32F407VGT6TR
STM32F407VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32L562VET6
STM32L562VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
M24C32-RMN6TP
M24C32-RMN6TP
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
M27C801-100F6
M27C801-100F6
STMicroelectronics
IC EPROM 8MBIT PARALLEL 32CDIP
L79L15ACD13TR
L79L15ACD13TR
STMicroelectronics
IC REG LINEAR -15V 100MA 8SO
PM8908TR
PM8908TR
STMicroelectronics
IC REG CONV DDR 1OUT 20QFN
BALF-SPI-02D3
BALF-SPI-02D3
STMicroelectronics
BALUN 434MHZ 6WFBGA FCBGA