STD16N60M2
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STMicroelectronics STD16N60M2

Manufacturer No:
STD16N60M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 12A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The STD16N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high efficiency and reliability in various power management applications. The MOSFET features a strip layout and an improved vertical structure, which enhances its on-resistance and switching characteristics, making it suitable for demanding high-efficiency converters.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
RDS(on) (Static Drain-Source On-Resistance) 0.280 (typ.), 0.320 (max.) Ω
ID (Drain Current, continuous at TC = 25 °C) 12 A
ID (Drain Current, continuous at TC = 100 °C) 7.6 A
IDM (Drain Current, pulsed) 48 A
PTOT (Total Dissipation at TC = 25 °C) 110 W
Tj (Max. Operating Junction Temperature) 150 °C
Tstg (Storage Temperature) -55 to 150 °C
VGS (Gate-Source Voltage) ±25 V
Qg (Total Gate Charge) 19 nC
Ciss (Input Capacitance) 700 pF
Coss (Output Capacitance) 38 pF
Crss (Reverse Transfer Capacitance) 1.2 pF

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (COSS) profile
  • 100% avalanche tested
  • Zener-protected gate
  • Low on-resistance and optimized switching characteristics
  • High efficiency in demanding converters
  • MDmesh M2 technology for improved performance

Applications

The STD16N60M2 is particularly suited for switching applications, including but not limited to:

  • High-efficiency power converters
  • Switch-mode power supplies (SMPS)
  • Motor control and drive systems
  • Power factor correction (PFC) circuits
  • Industrial and automotive power management systems

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STD16N60M2?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance (RDS(on)) of the STD16N60M2?

    The typical on-resistance (RDS(on)) is 0.280 Ω.

  3. What is the maximum continuous drain current (ID) at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 12 A.

  4. What is the maximum operating junction temperature (Tj) of the STD16N60M2?

    The maximum operating junction temperature (Tj) is 150 °C.

  5. What is the storage temperature range for the STD16N60M2?

    The storage temperature range is from -55 °C to 150 °C.

  6. What are the key features of the MDmesh M2 technology used in the STD16N60M2?

    The MDmesh M2 technology offers extremely low gate charge, excellent output capacitance profile, 100% avalanche testing, and Zener-protected gates.

  7. In what types of applications is the STD16N60M2 commonly used?

    The STD16N60M2 is commonly used in switching applications, including high-efficiency power converters, SMPS, motor control, and power factor correction circuits.

  8. What is the package type of the STD16N60M2?

    The STD16N60M2 is available in a DPAK (TO-252) package.

  9. What is the thermal resistance junction-case (Rthj-case) of the STD16N60M2?

    The thermal resistance junction-case (Rthj-case) is a maximum of 1.14 °C/W.

  10. How is the gate charge of the STD16N60M2 specified?

    The total gate charge (Qg) is specified as 19 nC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:320mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Part Number STD16N60M2 STD16N65M2 STD16N60M6 STD10N60M2 STD12N60M2 STD13N60M2 STD16N50M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 11A (Tc) 12A (Tc) 7.5A (Tc) 9A (Tc) 11A (Tc) 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 320mOhm @ 6A, 10V 360mOhm @ 5.5A, 10V 320mOhm @ 6A, 10V 600mOhm @ 3A, 10V 450mOhm @ 4.5A, 10V 380mOhm @ 5.5A, 10V 280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4.75V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 19.5 nC @ 10 V 16.7 nC @ 10 V 13.5 nC @ 10 V 16 nC @ 10 V 17 nC @ 10 V 19.5 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 100 V 718 pF @ 100 V 575 pF @ 100 V 400 pF @ 100 V 538 pF @ 100 V 580 pF @ 100 V 710 pF @ 100 V
FET Feature - - - - - - -
Power Dissipation (Max) 110W (Tc) 110W (Tc) 110W (Tc) 85W (Tc) 85W (Tc) 110W (Tc) 110W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK D-PAK (TO-252) DPAK DPAK DPAK TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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