STD16N60M6
  • Share:

STMicroelectronics STD16N60M6

Manufacturer No:
STD16N60M6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 12A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD16N60M6 is a high-performance N-channel power MOSFET from STMicroelectronics, part of the MDmesh M6 series. This device is designed to offer excellent switching behavior and reduced switching losses, making it highly efficient for various power conversion applications. The MDmesh M6 technology builds on the previous generation of MDmesh devices, providing improved RDS(on) per area and a user-friendly experience for maximum end-application efficiency.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
ID (Drain Current)12 A
RDS(on) (On-State Resistance)0.260 Ohm (typ.)
VGS(th) (Threshold Voltage)2.5 V to 4 V
PD (Power Dissipation)Dependent on package and thermal conditions
PackageDPAK
Operating Temperature Range-55°C to 150°C
RoHS ComplianceEcopack2

Key Features

  • Reduced switching losses
  • Lower RDS(on) per area compared to previous generation
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected

Applications

The STD16N60M6 is suitable for a variety of power conversion applications, including:

  • Switch-Mode Power Supplies (SMPS)
  • Data centers
  • Solar microinverters
  • Other high-voltage power conversion systems

Q & A

  1. What is the maximum drain-source voltage of the STD16N60M6?
    The maximum drain-source voltage is 600 V.
  2. What is the typical on-state resistance of the STD16N60M6?
    The typical on-state resistance is 0.260 Ohm.
  3. What package type is the STD16N60M6 available in?
    The STD16N60M6 is available in a DPAK package.
  4. Is the STD16N60M6 RoHS compliant?
    Yes, the STD16N60M6 is RoHS compliant with an Ecopack2 rating.
  5. What are the key features of the MDmesh M6 technology?
    The key features include reduced switching losses, lower RDS(on) per area, low gate input resistance, 100% avalanche tested, and Zener-protected.
  6. What are some common applications for the STD16N60M6?
    Common applications include SMPS, data centers, solar microinverters, and other high-voltage power conversion systems.
  7. What is the operating temperature range of the STD16N60M6?
    The operating temperature range is -55°C to 150°C.
  8. Is the STD16N60M6 100% avalanche tested?
    Yes, the STD16N60M6 is 100% avalanche tested.
  9. What is the typical drain current of the STD16N60M6?
    The typical drain current is 12 A.
  10. Where can I find additional resources and documentation for the STD16N60M6?
    Additional resources, including datasheets, SPICE models, and EDA symbols, can be found on the STMicroelectronics website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:320mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16.7 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:575 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-PAK (TO-252)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.37
183

Please send RFQ , we will respond immediately.

Same Series
RD15S10H00/AA
RD15S10H00/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD15S10LVLS/AA
DD15S10LVLS/AA
CONN D-SUB HD RCPT 15POS CRIMP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
PCD50M98S0T2X
PCD50M98S0T2X
DSUB 50M STR CONTACT J/S TIN
DD15S20WTS
DD15S20WTS
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HT20/AA
DD26M20HT20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26M20HE30/AA
DD26M20HE30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S0T0
DD26S2S0T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number STD16N60M6 STD18N60M6 STD10N60M6 STD13N60M6 STD16N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 13A (Tc) 6.4A (Tc) 10A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 320mOhm @ 6A, 10V 280mOhm @ 6.5A, 10V 600mOhm @ 3.2A, 10V 380mOhm @ 5A, 10V 320mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA 4.75V @ 250µA 4.75V @ 250µA 4.75V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.7 nC @ 10 V 16.8 nC @ 10 V 8.8 nC @ 10 V 13 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 575 pF @ 100 V 650 pF @ 100 V 338 pF @ 100 V 509 pF @ 100 V 700 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 110W (Tc) 110W (Tc) 60W (Tc) 92W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D-PAK (TO-252) D-PAK (TO-252) D-PAK (TO-252) D-PAK (TO-252) DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

STF140N6F7
STF140N6F7
STMicroelectronics
MOSFET N-CH 60V 70A TO220FP
STM32L496ZGT3
STM32L496ZGT3
STMicroelectronics
IC MCU 32BIT 1MB FLASH 144LQFP
STM32F100VDT6B
STM32F100VDT6B
STMicroelectronics
IC MCU 32BIT 384KB FLASH 100LQFP
STM8AF6286TCY
STM8AF6286TCY
STMicroelectronics
IC MCU 8BIT 64KB FLASH 32LQFP
STM32F072RBH6
STM32F072RBH6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64UFBGA
STM32H755ZIT6U
STM32H755ZIT6U
STMicroelectronics
IC MCU 32BIT 2MB FLASH 144LQFP
TDA7491LP
TDA7491LP
STMicroelectronics
IC AMP CLSS D STER 5W POWERSSO36
VNQ5050AKTR-E
VNQ5050AKTR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
VND5T035AK-E
VND5T035AK-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
VND7140AJ12TR-E
VND7140AJ12TR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO12
STM1811LWX7F
STM1811LWX7F
STMicroelectronics
IC SUPERVISOR 1 CHANNEL SOT23-3
LPR450AL
LPR450AL
STMicroelectronics
GYRO 500DEG/S 2MV 140HZ 28LGA