STD16N60M6
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STMicroelectronics STD16N60M6

Manufacturer No:
STD16N60M6
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 12A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The STD16N60M6 is a high-performance N-channel power MOSFET from STMicroelectronics, part of the MDmesh M6 series. This device is designed to offer excellent switching behavior and reduced switching losses, making it highly efficient for various power conversion applications. The MDmesh M6 technology builds on the previous generation of MDmesh devices, providing improved RDS(on) per area and a user-friendly experience for maximum end-application efficiency.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
ID (Drain Current)12 A
RDS(on) (On-State Resistance)0.260 Ohm (typ.)
VGS(th) (Threshold Voltage)2.5 V to 4 V
PD (Power Dissipation)Dependent on package and thermal conditions
PackageDPAK
Operating Temperature Range-55°C to 150°C
RoHS ComplianceEcopack2

Key Features

  • Reduced switching losses
  • Lower RDS(on) per area compared to previous generation
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected

Applications

The STD16N60M6 is suitable for a variety of power conversion applications, including:

  • Switch-Mode Power Supplies (SMPS)
  • Data centers
  • Solar microinverters
  • Other high-voltage power conversion systems

Q & A

  1. What is the maximum drain-source voltage of the STD16N60M6?
    The maximum drain-source voltage is 600 V.
  2. What is the typical on-state resistance of the STD16N60M6?
    The typical on-state resistance is 0.260 Ohm.
  3. What package type is the STD16N60M6 available in?
    The STD16N60M6 is available in a DPAK package.
  4. Is the STD16N60M6 RoHS compliant?
    Yes, the STD16N60M6 is RoHS compliant with an Ecopack2 rating.
  5. What are the key features of the MDmesh M6 technology?
    The key features include reduced switching losses, lower RDS(on) per area, low gate input resistance, 100% avalanche tested, and Zener-protected.
  6. What are some common applications for the STD16N60M6?
    Common applications include SMPS, data centers, solar microinverters, and other high-voltage power conversion systems.
  7. What is the operating temperature range of the STD16N60M6?
    The operating temperature range is -55°C to 150°C.
  8. Is the STD16N60M6 100% avalanche tested?
    Yes, the STD16N60M6 is 100% avalanche tested.
  9. What is the typical drain current of the STD16N60M6?
    The typical drain current is 12 A.
  10. Where can I find additional resources and documentation for the STD16N60M6?
    Additional resources, including datasheets, SPICE models, and EDA symbols, can be found on the STMicroelectronics website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:320mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16.7 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:575 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-PAK (TO-252)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD16N60M6 STD18N60M6 STD10N60M6 STD13N60M6 STD16N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 13A (Tc) 6.4A (Tc) 10A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 320mOhm @ 6A, 10V 280mOhm @ 6.5A, 10V 600mOhm @ 3.2A, 10V 380mOhm @ 5A, 10V 320mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA 4.75V @ 250µA 4.75V @ 250µA 4.75V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.7 nC @ 10 V 16.8 nC @ 10 V 8.8 nC @ 10 V 13 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 575 pF @ 100 V 650 pF @ 100 V 338 pF @ 100 V 509 pF @ 100 V 700 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 110W (Tc) 110W (Tc) 60W (Tc) 92W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D-PAK (TO-252) D-PAK (TO-252) D-PAK (TO-252) D-PAK (TO-252) DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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