STMicroelectronics STB28N60M2

Manufacturer No:: STB28N60M2
Manufacturer:: STMicroelectronics
Package:: Tape & Reel (TR)
Description:: MOSFET N-CH 600V 22A D2PAK
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Product Introduction

Overview

The STB28N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is designed to offer low on-resistance and optimized switching characteristics, making it highly suitable for high-efficiency converters. Available in D²PAK, TO-220, and TO-247 packages, it caters to various application needs with its robust performance and reliability.

Key Specifications

Parameter	Value	Unit
Drain-Source Breakdown Voltage (V_DS)	600	V
Static Drain-Source On-Resistance (R_DS(on))	0.150	Ω
Continuous Drain Current (I_D) at T_C = 25 °C	22	A
Continuous Drain Current (I_D) at T_C = 100 °C	14	A
Pulsed Drain Current (I_DM)	88	A
Total Dissipation at T_C = 25 °C	170	W
Gate-Source Voltage (V_GS)	±25	V
Storage Temperature Range	-55 to 150	°C

Key Features

Extremely low gate charge
Excellent output capacitance (COSS) profile
100% avalanche tested
Zener-protected
Low on-resistance and optimized switching characteristics

Applications

Switching applications
LCC (Load Commutated Chopper) converters
Resonant converters

Q & A

What is the maximum drain-source breakdown voltage of the STB28N60M2? The maximum drain-source breakdown voltage is 600 V.
What is the typical static drain-source on-resistance of the STB28N60M2? The typical static drain-source on-resistance is 0.150 Ω.
What are the available packages for the STB28N60M2? The STB28N60M2 is available in D²PAK, TO-220, and TO-247 packages.
What is the continuous drain current at T_C = 25 °C? The continuous drain current at T_C = 25 °C is 22 A.
What is the pulsed drain current of the STB28N60M2? The pulsed drain current is 88 A.
What are the key features of the STB28N60M2? Key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, and Zener-protected.
What are the typical applications of the STB28N60M2? Typical applications include switching applications, LCC converters, and resonant converters.
What is the total dissipation at T_C = 25 °C? The total dissipation at T_C = 25 °C is 170 W.
What is the gate-source voltage range for the STB28N60M2? The gate-source voltage range is ±25 V.
What is the storage temperature range for the STB28N60M2? The storage temperature range is -55 to 150 °C.

In Stock

UnitPrice: $3.96

Quantity: 129

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Same Series

Part Number	STB28N60M2	STB28N65M2	STB18N60M2	STB24N60M2	STB26N60M2	STB28N60DM2
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Status	Active	Active	Active	Active	Active	Active
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V	650 V	600 V	600 V	600 V	600 V
Current - Continuous Drain (Id) @ 25°C	22A (Tc)	20A (Tc)	13A (Tc)	18A (Tc)	20A (Tc)	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	150mOhm @ 11A, 10V	180mOhm @ 10A, 10V	280mOhm @ 6.5A, 10V	190mOhm @ 9A, 10V	165mOhm @ 10A, 10V	160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	4V @ 250µA	4V @ 250µA	4V @ 250µA	4V @ 250µA	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 10 V	35 nC @ 10 V	21.5 nC @ 10 V	29 nC @ 10 V	34 nC @ 10 V	34 nC @ 10 V
Vgs (Max)	±25V	±25V	±25V	±25V	±25V	±25V
Input Capacitance (Ciss) (Max) @ Vds	1440 pF @ 100 V	1440 pF @ 100 V	791 pF @ 100 V	1060 pF @ 100 V	1360 pF @ 100 V	1500 pF @ 100 V
FET Feature	-	-	-	-	-	-
Power Dissipation (Max)	170W (Tc)	170W (Tc)	110W (Tc)	150W (Tc)	169W (Tc)	170W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	D²PAK (TO-263)	D²PAK (TO-263)	D2PAK	D²PAK (TO-263)	D²PAK	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	36 nC @ 10 V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	1440 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	170W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D²PAK (TO-263)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STMicroelectronics STB28N60M2

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

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