Overview
The STB24N60M2 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh II Plus™ low Qg technology. This device is designed to offer exceptional efficiency and reliability in high-power switching applications. Available in D2PAK, I2PAK, TO-220, and TO-247 packages, it caters to various design requirements. The STB24N60M2 features a vertical structure combined with a strip layout, resulting in one of the world's lowest on-resistance and gate charge, making it ideal for demanding high-efficiency converters.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Maximum Drain-Source Voltage) | 600 | V |
| VGS (Maximum Gate-Source Voltage) | ±25 | V |
| ID (Maximum Drain Current at TC = 25°C) | 18 | A |
| ID (Maximum Drain Current at TC = 100°C) | 12 | A |
| IDM (Maximum Pulsed Drain Current) | 72 | A |
| PTOT (Total Dissipation at TC = 25°C) | 150 | W |
| RDS(on) (Maximum Drain-Source On-State Resistance) | 0.19 | Ω |
| Qg (Total Gate Charge) | 29 | nC |
| Tj (Maximum Junction Temperature) | 150 | °C |
| Tstg (Storage Temperature) | -55 to 150 | °C |
Key Features
- Extremely low gate charge (Qg) and low RDS(on) x area compared to previous generations.
- Lower gate input resistance.
- 100% avalanche tested.
- Zener-protected gate.
- High dv/dt ruggedness.
- Available in D2PAK, I2PAK, TO-220, and TO-247 packages.
- ECOPACK® compliant for environmental sustainability.
Applications
The STB24N60M2 is suitable for a variety of high-power switching applications, including:
- High-efficiency power converters.
- Switch-mode power supplies.
- Motor control and drives.
- Power factor correction (PFC) circuits.
- Uninterruptible power supplies (UPS).
Q & A
- What is the maximum drain-source voltage of the STB24N60M2?
The maximum drain-source voltage (VDS) is 600 V.
- What is the maximum drain current at 25°C for the STB24N60M2?
The maximum drain current (ID) at TC = 25°C is 18 A.
- What is the typical on-state resistance (RDS(on)) of the STB24N60M2?
The typical on-state resistance (RDS(on)) is 0.19 Ω.
- What is the total gate charge (Qg) of the STB24N60M2?
The total gate charge (Qg) is 29 nC.
- What are the available packages for the STB24N60M2?
The STB24N60M2 is available in D2PAK, I2PAK, TO-220, and TO-247 packages.
- What is the maximum junction temperature for the STB24N60M2?
The maximum junction temperature (Tj) is 150 °C.
- Is the STB24N60M2 environmentally compliant?
Yes, the STB24N60M2 is ECOPACK® compliant, meeting environmental sustainability standards.
- What are some typical applications for the STB24N60M2?
Typical applications include high-efficiency power converters, switch-mode power supplies, motor control and drives, power factor correction (PFC) circuits, and uninterruptible power supplies (UPS).
- What is the dv/dt ruggedness of the STB24N60M2?
The STB24N60M2 has a high dv/dt ruggedness of up to 50 V/ns.
- Is the STB24N60M2 100% avalanche tested?
Yes, the STB24N60M2 is 100% avalanche tested.
