STB24N60DM2
  • Share:

STMicroelectronics STB24N60DM2

Manufacturer No:
STB24N60DM2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 18A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB24N60DM2 is a revolutionary N-channel Power MOSFET produced by STMicroelectronics. This device combines a vertical structure with STMicroelectronics' strip layout, resulting in one of the world's lowest on-resistance and gate charge. This innovative design makes the STB24N60DM2 an ideal choice for high-performance applications requiring efficient power management.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
RDS(on) (On-Resistance)0.175 Ω (typ.)
ID (Drain Current)18 A
PD (Power Dissipation)150 W
PackageD2PAK

Key Features

  • Low on-resistance (RDS(on)) of 0.175 Ω (typ.)
  • Low gate charge (Qg)
  • High drain current (ID) of 18 A
  • High power dissipation (PD) of 150 W
  • FDmesh II Plus™ technology for enhanced performance

Applications

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Industrial automation and control systems
  • Aerospace and defense applications
  • High-reliability and high-power electronic systems

Q & A

  1. What is the maximum drain-source voltage of the STB24N60DM2?
    The maximum drain-source voltage is 600 V.
  2. What is the typical on-resistance of the STB24N60DM2?
    The typical on-resistance is 0.175 Ω.
  3. What is the maximum drain current of the STB24N60DM2?
    The maximum drain current is 18 A.
  4. What package types are available for the STB24N60DM2?
    The STB24N60DM2 is available in D2PAK, TO-220, and TO-247 packages.
  5. What technology is used in the STB24N60DM2?
    The STB24N60DM2 uses FDmesh II Plus™ technology.
  6. What are some typical applications of the STB24N60DM2?
    Typical applications include power supplies, motor control, industrial automation, aerospace, and high-reliability electronic systems.
  7. What is the power dissipation capability of the STB24N60DM2?
    The power dissipation capability is 150 W.
  8. Why is the STB24N60DM2 considered revolutionary?
    The STB24N60DM2 is considered revolutionary due to its low on-resistance and gate charge, achieved through its unique vertical structure and strip layout.
  9. Where can I find detailed specifications for the STB24N60DM2?
    Detailed specifications can be found on the official STMicroelectronics website, as well as on distributor websites like Digi-Key and Mouser.
  10. Is the STB24N60DM2 suitable for high-performance applications?
    Yes, the STB24N60DM2 is highly suitable for high-performance applications due to its low on-resistance and high current handling capabilities.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:200mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1055 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$3.49
114

Please send RFQ , we will respond immediately.

Same Series
STW24N60DM2
STW24N60DM2
MOSFET N-CH 600V 18A TO247
STB24N60DM2
STB24N60DM2
MOSFET N-CH 600V 18A D2PAK

Similar Products

Part Number STB24N60DM2 STB28N60DM2 STB24N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 21A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 9A, 10V 160mOhm @ 10.5A, 10V 190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 34 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1055 pF @ 100 V 1500 pF @ 100 V 1060 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 150W (Tc) 170W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN

Related Product By Brand

SMA6J8.5CA-TR
SMA6J8.5CA-TR
STMicroelectronics
TVS DIODE 8.5VWM 18.7VC SMA
SATAULC6-2P6
SATAULC6-2P6
STMicroelectronics
TVS DIODE 5VWM 19VC SOT666
BYT71-800
BYT71-800
STMicroelectronics
DIODE GEN PURP 800V 6A TO220AC
BD438
BD438
STMicroelectronics
TRANS PNP 45V 4A SOT32-3
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STH410N4F7-6AG
STH410N4F7-6AG
STMicroelectronics
MOSFET N-CH 40V 200A H2PAK-6
TDA7718N
TDA7718N
STMicroelectronics
IC AUDIO SIGNAL PROCESSR 28TSSOP
STM32F207VET6
STM32F207VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
L9613B013TR
L9613B013TR
STMicroelectronics
IC TRANSCEIVER HALF 1/1 8SO
STM1811LWX7F
STM1811LWX7F
STMicroelectronics
IC SUPERVISOR 1 CHANNEL SOT23-3
LF25CDT-TRY
LF25CDT-TRY
STMicroelectronics
IC REG LINEAR 2.5V 500MA DPAK
L78M05ACDT-TR
L78M05ACDT-TR
STMicroelectronics
IC REG LINEAR 5V 500MA DPAK