STB24N60DM2
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STMicroelectronics STB24N60DM2

Manufacturer No:
STB24N60DM2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 18A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB24N60DM2 is a revolutionary N-channel Power MOSFET produced by STMicroelectronics. This device combines a vertical structure with STMicroelectronics' strip layout, resulting in one of the world's lowest on-resistance and gate charge. This innovative design makes the STB24N60DM2 an ideal choice for high-performance applications requiring efficient power management.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
RDS(on) (On-Resistance)0.175 Ω (typ.)
ID (Drain Current)18 A
PD (Power Dissipation)150 W
PackageD2PAK

Key Features

  • Low on-resistance (RDS(on)) of 0.175 Ω (typ.)
  • Low gate charge (Qg)
  • High drain current (ID) of 18 A
  • High power dissipation (PD) of 150 W
  • FDmesh II Plus™ technology for enhanced performance

Applications

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Industrial automation and control systems
  • Aerospace and defense applications
  • High-reliability and high-power electronic systems

Q & A

  1. What is the maximum drain-source voltage of the STB24N60DM2?
    The maximum drain-source voltage is 600 V.
  2. What is the typical on-resistance of the STB24N60DM2?
    The typical on-resistance is 0.175 Ω.
  3. What is the maximum drain current of the STB24N60DM2?
    The maximum drain current is 18 A.
  4. What package types are available for the STB24N60DM2?
    The STB24N60DM2 is available in D2PAK, TO-220, and TO-247 packages.
  5. What technology is used in the STB24N60DM2?
    The STB24N60DM2 uses FDmesh II Plus™ technology.
  6. What are some typical applications of the STB24N60DM2?
    Typical applications include power supplies, motor control, industrial automation, aerospace, and high-reliability electronic systems.
  7. What is the power dissipation capability of the STB24N60DM2?
    The power dissipation capability is 150 W.
  8. Why is the STB24N60DM2 considered revolutionary?
    The STB24N60DM2 is considered revolutionary due to its low on-resistance and gate charge, achieved through its unique vertical structure and strip layout.
  9. Where can I find detailed specifications for the STB24N60DM2?
    Detailed specifications can be found on the official STMicroelectronics website, as well as on distributor websites like Digi-Key and Mouser.
  10. Is the STB24N60DM2 suitable for high-performance applications?
    Yes, the STB24N60DM2 is highly suitable for high-performance applications due to its low on-resistance and high current handling capabilities.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:200mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1055 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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In Stock

$3.49
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Same Series
STW24N60DM2
STW24N60DM2
MOSFET N-CH 600V 18A TO247
STB24N60DM2
STB24N60DM2
MOSFET N-CH 600V 18A D2PAK

Similar Products

Part Number STB24N60DM2 STB28N60DM2 STB24N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 21A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 9A, 10V 160mOhm @ 10.5A, 10V 190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 34 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1055 pF @ 100 V 1500 pF @ 100 V 1060 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 150W (Tc) 170W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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