STP24N60DM2
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STMicroelectronics STP24N60DM2

Manufacturer No:
STP24N60DM2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 18A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STP24N60DM2 is a high-performance N-channel Power MOSFET produced by STMicroelectronics, utilizing the advanced FDmesh II Plus™ technology. This device is available in the TO-220 package and is designed for high-efficiency switching applications. It features an extremely low gate charge and input capacitance, making it ideal for demanding converter designs, including bridge topologies and ZVS phase-shift converters.

Key Specifications

ParameterValueUnit
VDS (Drain-Source Voltage)650 VV
RDS(on) (Static Drain-Source On-Resistance)0.20 ΩΩ
ID (Drain Current, Continuous at TC = 25 °C)18 AA
ID (Drain Current, Continuous at TC = 100 °C)11 AA
IDM (Drain Current, Pulsed)72 AA
PTOT (Total Dissipation at TC = 25 °C)150 WW
VGS (Gate-Source Voltage)± 25 VV
Tj (Max. Operating Junction Temperature)150 °C°C
Tstg (Storage Temperature)-55 to 150 °C°C

Key Features

  • Extremely low gate charge and input capacitance
  • Lower RDS(on) x area compared to previous generations
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected gate
  • High dv/dt and avalanche capabilities

Applications

The STP24N60DM2 is suitable for various high-efficiency switching applications, including:

  • Bridge topologies
  • ZVS phase-shift converters
  • Other demanding high-efficiency converter designs

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP24N60DM2?
    The maximum drain-source voltage (VDS) is 650 V.
  2. What is the typical on-resistance (RDS(on)) of the STP24N60DM2?
    The typical on-resistance (RDS(on)) is 0.20 Ω.
  3. What is the continuous drain current (ID) at 25 °C?
    The continuous drain current (ID) at 25 °C is 18 A.
  4. What is the maximum operating junction temperature (Tj) of the STP24N60DM2?
    The maximum operating junction temperature (Tj) is 150 °C.
  5. What are the key features of the STP24N60DM2?
    The key features include extremely low gate charge and input capacitance, lower RDS(on) x area, low gate input resistance, 100% avalanche tested, Zener-protected gate, and high dv/dt and avalanche capabilities.
  6. In which package is the STP24N60DM2 available?
    The STP24N60DM2 is available in the TO-220 package.
  7. What are the typical applications of the STP24N60DM2?
    The typical applications include bridge topologies, ZVS phase-shift converters, and other high-efficiency converter designs.
  8. What is the maximum total dissipation (PTOT) at 25 °C?
    The maximum total dissipation (PTOT) at 25 °C is 150 W.
  9. What is the gate-source voltage (VGS) range?
    The gate-source voltage (VGS) range is ± 25 V.
  10. Is the STP24N60DM2 environmentally compliant?
    Yes, the STP24N60DM2 is available in ECOPACK® packages, which meet various environmental compliance standards.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:200mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1055 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STW24N60DM2
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STB24N60DM2
MOSFET N-CH 600V 18A D2PAK

Similar Products

Part Number STP24N60DM2 STP28N60DM2 STP24N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 21A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 9A, 10V 160mOhm @ 10.5A, 10V 190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 34 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1055 pF @ 100 V 1500 pF @ 100 V 1060 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 150W (Tc) 170W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

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