STI24N60M2
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STMicroelectronics STI24N60M2

Manufacturer No:
STI24N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 18A I2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STI24N60M2 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh II Plus™ low Qg technology. This device is available in the I2PAK (TO-262) package and is designed for high-efficiency switching applications. It combines a vertical structure with a strip layout, resulting in one of the world's lowest on-resistance and gate charge, making it suitable for demanding high-efficiency converters.

Key Specifications

ParameterValueUnit
Drain-Source Breakdown Voltage (VBRDSS)600V
Drain Current (continuous) at TC = 25 °C18A
Drain Current (continuous) at TC = 100 °C12A
Pulsed Drain Current (IDM)72A
On-Resistance (RDS(on))0.168 Ω (typ.)Ω
Gate-Source Voltage (VGS)± 25V
Total Gate Charge (Qg)29 nC (typ.)nC
Thermal Resistance Junction-Case (Rthj-case)0.83 °C/W°C/W
Maximum Junction Temperature (Tj)150°C

Key Features

  • Extremely low gate charge (Qg)
  • Lower RDS(on) x area compared to previous generations
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected
  • High dv/dt ruggedness

Applications

The STI24N60M2 is primarily used in high-efficiency switching applications, including but not limited to:

  • Power supplies and converters
  • Motor control and drives
  • Industrial automation
  • Renewable energy systems

Q & A

  1. What is the maximum drain-source breakdown voltage of the STI24N60M2?
    The maximum drain-source breakdown voltage is 600 V.
  2. What is the typical on-resistance of the STI24N60M2?
    The typical on-resistance is 0.168 Ω.
  3. What is the maximum continuous drain current at 25 °C?
    The maximum continuous drain current at 25 °C is 18 A.
  4. What is the total gate charge of the STI24N60M2?
    The total gate charge is typically 29 nC.
  5. What are the package options for the STI24N60M2?
    The STI24N60M2 is available in the I2PAK (TO-262) package.
  6. What is the maximum junction temperature for the STI24N60M2?
    The maximum junction temperature is 150 °C.
  7. Is the STI24N60M2 100% avalanche tested?
    Yes, the STI24N60M2 is 100% avalanche tested.
  8. What is the thermal resistance junction-case for the STI24N60M2?
    The thermal resistance junction-case is 0.83 °C/W.
  9. What are some typical applications of the STI24N60M2?
    Typical applications include power supplies, motor control, industrial automation, and renewable energy systems.
  10. Does the STI24N60M2 have Zener protection?
    Yes, the STI24N60M2 has Zener protection.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1060 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Same Series
STP24N60M2
STP24N60M2
MOSFET N-CH 600V 18A TO220
STI24N60M2
STI24N60M2
MOSFET N-CH 600V 18A I2PAK
STW24N60M2
STW24N60M2
MOSFET N-CH 600V 18A TO247

Similar Products

Part Number STI24N60M2 STI24N60M6 STI28N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 17A (Tj) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V - 150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA - 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V - 36 nC @ 10 V
Vgs (Max) ±25V - ±25V
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 100 V - 1440 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 150W (Tc) - 170W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package I2PAK (TO-262) I2PAK I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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