STI24N60M2
  • Share:

STMicroelectronics STI24N60M2

Manufacturer No:
STI24N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 18A I2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STI24N60M2 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh II Plus™ low Qg technology. This device is available in the I2PAK (TO-262) package and is designed for high-efficiency switching applications. It combines a vertical structure with a strip layout, resulting in one of the world's lowest on-resistance and gate charge, making it suitable for demanding high-efficiency converters.

Key Specifications

ParameterValueUnit
Drain-Source Breakdown Voltage (VBRDSS)600V
Drain Current (continuous) at TC = 25 °C18A
Drain Current (continuous) at TC = 100 °C12A
Pulsed Drain Current (IDM)72A
On-Resistance (RDS(on))0.168 Ω (typ.)Ω
Gate-Source Voltage (VGS)± 25V
Total Gate Charge (Qg)29 nC (typ.)nC
Thermal Resistance Junction-Case (Rthj-case)0.83 °C/W°C/W
Maximum Junction Temperature (Tj)150°C

Key Features

  • Extremely low gate charge (Qg)
  • Lower RDS(on) x area compared to previous generations
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected
  • High dv/dt ruggedness

Applications

The STI24N60M2 is primarily used in high-efficiency switching applications, including but not limited to:

  • Power supplies and converters
  • Motor control and drives
  • Industrial automation
  • Renewable energy systems

Q & A

  1. What is the maximum drain-source breakdown voltage of the STI24N60M2?
    The maximum drain-source breakdown voltage is 600 V.
  2. What is the typical on-resistance of the STI24N60M2?
    The typical on-resistance is 0.168 Ω.
  3. What is the maximum continuous drain current at 25 °C?
    The maximum continuous drain current at 25 °C is 18 A.
  4. What is the total gate charge of the STI24N60M2?
    The total gate charge is typically 29 nC.
  5. What are the package options for the STI24N60M2?
    The STI24N60M2 is available in the I2PAK (TO-262) package.
  6. What is the maximum junction temperature for the STI24N60M2?
    The maximum junction temperature is 150 °C.
  7. Is the STI24N60M2 100% avalanche tested?
    Yes, the STI24N60M2 is 100% avalanche tested.
  8. What is the thermal resistance junction-case for the STI24N60M2?
    The thermal resistance junction-case is 0.83 °C/W.
  9. What are some typical applications of the STI24N60M2?
    Typical applications include power supplies, motor control, industrial automation, and renewable energy systems.
  10. Does the STI24N60M2 have Zener protection?
    Yes, the STI24N60M2 has Zener protection.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1060 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

$2.89
331

Please send RFQ , we will respond immediately.

Same Series
STP24N60M2
STP24N60M2
MOSFET N-CH 600V 18A TO220
STI24N60M2
STI24N60M2
MOSFET N-CH 600V 18A I2PAK
STW24N60M2
STW24N60M2
MOSFET N-CH 600V 18A TO247

Similar Products

Part Number STI24N60M2 STI24N60M6 STI28N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 17A (Tj) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V - 150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA - 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V - 36 nC @ 10 V
Vgs (Max) ±25V - ±25V
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 100 V - 1440 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 150W (Tc) - 170W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package I2PAK (TO-262) I2PAK I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

SCTWA30N120
SCTWA30N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

STPSC10H12CWL
STPSC10H12CWL
STMicroelectronics
DIODE ARRAY SCHOTTKY 1200V TO247
STTH30AC06FP
STTH30AC06FP
STMicroelectronics
DIODE GEN PURP 600V 30A TO220
SCT30N120H
SCT30N120H
STMicroelectronics
SICFET N-CH 1200V 40A H2PAK-2
STM32F078VBH6
STM32F078VBH6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 100UFBGA
HCF4069YUM013TR
HCF4069YUM013TR
STMicroelectronics
IC INVERTER 6CH 1 INP
M95160-DRMN3TP/K
M95160-DRMN3TP/K
STMicroelectronics
IC EEPROM 16KBIT SPI 20MHZ 8SO
M24256-BWMN6T
M24256-BWMN6T
STMicroelectronics
IC EEPROM 256KBIT I2C 1MHZ 8SO
L9301-TR
L9301-TR
STMicroelectronics
IC PWR DRIVER N-CHANNEL PWRSSO36
VN5E025AJ-E
VN5E025AJ-E
STMicroelectronics
IC PWR SWTCH N-CHAN 1:1 PWRSSO12
LD39130SJ18R
LD39130SJ18R
STMicroelectronics
IC REG LIN 1.8V 300MA 4FLIPCHIP
LD1085V18
LD1085V18
STMicroelectronics
IC REG LINEAR 1.8V 3A TO220AB
LSM6DS3HTR
LSM6DS3HTR
STMicroelectronics
IMU ACCEL/GYRO/TEMP I2C/SPI LGA