STW24N60M2
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STMicroelectronics STW24N60M2

Manufacturer No:
STW24N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 18A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW24N60M2 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh II Plus technology. This device is designed to offer one of the world's lowest on-resistance and gate charge, making it highly suitable for demanding high-efficiency converters. The STW24N60M2 is packaged in a TO-247-3 through-hole configuration, ensuring robust thermal and electrical performance.

Key Specifications

ParameterValueUnit
Drain-Source Breakdown Voltage (VDS)600V
On-Resistance (RDS(on))0.168 (typ.)Ω
Continuous Drain Current (ID)18 A (at Tc = 25°C)A
Pulse Drain Current (IDM)36 A (at Tc = 25°C)A
Power Dissipation (PTOT)150 W (at Tc = 25°C)W
Gate-Source Threshold Voltage (VGS(th))2.5 - 4 VV
Operating Junction Temperature (TJ)-55 to 150°C
Thermal Resistance Junction-Case (Rthj-case)4.17 °C/W°C/W
PackageTO-247-3

Key Features

  • Extremely low gate charge and on-resistance (RDS(on))
  • Low input capacitance and gate charge
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected
  • MDmesh II Plus technology for high efficiency and low switching losses

Applications

The STW24N60M2 is ideal for various high-efficiency power conversion applications, including:

  • Switching power supplies (SMPS)
  • Data center power systems
  • Solar microinverters
  • High-power DC-DC converters
  • Motor control and drive systems

Q & A

  1. What is the drain-source breakdown voltage of the STW24N60M2?
    The drain-source breakdown voltage is 600 V.
  2. What is the typical on-resistance of the STW24N60M2?
    The typical on-resistance is 0.168 Ω.
  3. What is the maximum continuous drain current of the STW24N60M2 at Tc = 25°C?
    The maximum continuous drain current is 18 A.
  4. What is the package type of the STW24N60M2?
    The package type is TO-247-3.
  5. Is the STW24N60M2 100% avalanche tested?
    Yes, the STW24N60M2 is 100% avalanche tested.
  6. What technology is used in the STW24N60M2?
    The STW24N60M2 uses MDmesh II Plus technology.
  7. What are some typical applications of the STW24N60M2?
    Typical applications include switching power supplies, data center power systems, solar microinverters, and high-power DC-DC converters.
  8. What is the operating junction temperature range of the STW24N60M2?
    The operating junction temperature range is -55 to 150°C.
  9. What is the thermal resistance junction-case of the STW24N60M2?
    The thermal resistance junction-case is 4.17 °C/W.
  10. Is the STW24N60M2 Zener-protected?
    Yes, the STW24N60M2 is Zener-protected.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1060 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Same Series
STP24N60M2
STP24N60M2
MOSFET N-CH 600V 18A TO220
STI24N60M2
STI24N60M2
MOSFET N-CH 600V 18A I2PAK
STW24N60M2
STW24N60M2
MOSFET N-CH 600V 18A TO247

Similar Products

Part Number STW24N60M2 STW26N60M2 STW24N60M6 STW28N60M2 STW24N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 20A (Tc) 17A (Tj) 24A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V - 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V 165mOhm @ 10A, 10V - 150mOhm @ 12A, 10V 200mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA - 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 34 nC @ 10 V - 37 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±25V ±25V - ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 100 V 1360 pF @ 100 V - 1370 pF @ 100 V 1055 pF @ 100 V
FET Feature - - - - -
Power Dissipation (Max) 150W (Tc) 169W (Tc) - 170W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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