STB28N65M2
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STMicroelectronics STB28N65M2

Manufacturer No:
STB28N65M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 20A D2PAK
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The STB28N65M2 is a high-performance N-channel power MOSFET from STMicroelectronics, part of the MDmesh M2 series. This device is designed to offer excellent electrical characteristics, making it suitable for a wide range of high-power applications. With its high voltage rating and low on-resistance, the STB28N65M2 is ideal for use in power conversion systems, motor control, and other high-current applications.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 650 V
RDS(on) (On-Resistance) 0.15 Ohm (typ.)
ID (Drain Current) 20 A
PD (Power Dissipation) 170 W
Package D2PAK
Gate Charge Extremely low
Output Capacitance (Coss) Excellent profile
Avalanche Testing 100% tested
Gate Protection Zener-protected

Key Features

  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Low on-resistance of 0.15 Ohm (typ.), reducing power losses and improving efficiency.
  • High drain current of 20 A, supporting high-current applications.
  • Excellent output capacitance (Coss) profile, which helps in reducing switching losses.
  • 100% avalanche tested, ensuring robustness and reliability under extreme conditions.
  • Zener-protected gate, providing enhanced protection against voltage spikes.

Applications

  • Power conversion systems (e.g., DC-DC converters, AC-DC converters).
  • Motor control and drive systems.
  • High-power switching applications.
  • Industrial power supplies.
  • Automotive systems requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the STB28N65M2?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the typical on-resistance of the STB28N65M2?

    The typical on-resistance (RDS(on)) is 0.15 Ohm.

  3. What is the maximum drain current of the STB28N65M2?

    The maximum drain current (ID) is 20 A.

  4. What package type is the STB28N65M2 available in?

    The STB28N65M2 is available in the D2PAK package.

  5. Is the STB28N65M2 protected against avalanche conditions?

    Yes, the STB28N65M2 is 100% avalanche tested.

  6. What is the power dissipation capability of the STB28N65M2?

    The power dissipation (PD) is 170 W.

  7. Does the STB28N65M2 have any gate protection features?

    Yes, the STB28N65M2 has Zener-protected gates.

  8. What are some common applications for the STB28N65M2?

    Common applications include power conversion systems, motor control, high-power switching, industrial power supplies, and automotive systems.

  9. How does the STB28N65M2 perform in terms of output capacitance?

    The STB28N65M2 has an excellent output capacitance (Coss) profile.

  10. Is the STB28N65M2 suitable for high-current applications?

    Yes, with a high drain current of 20 A, it is suitable for high-current applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1440 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):170W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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In Stock

$3.86
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STP28N65M2
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Similar Products

Part Number STB28N65M2 STB24N65M2 STB28N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 16A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 10A, 10V 230mOhm @ 8A, 10V 150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 29 nC @ 10 V 36 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1440 pF @ 100 V 1060 pF @ 100 V 1440 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 170W (Tc) 150W (Tc) 170W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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