STB28N65M2
  • Share:

STMicroelectronics STB28N65M2

Manufacturer No:
STB28N65M2
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 650V 20A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB28N65M2 is a high-performance N-channel power MOSFET from STMicroelectronics, part of the MDmesh M2 series. This device is designed to offer excellent electrical characteristics, making it suitable for a wide range of high-power applications. With its high voltage rating and low on-resistance, the STB28N65M2 is ideal for use in power conversion systems, motor control, and other high-current applications.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 650 V
RDS(on) (On-Resistance) 0.15 Ohm (typ.)
ID (Drain Current) 20 A
PD (Power Dissipation) 170 W
Package D2PAK
Gate Charge Extremely low
Output Capacitance (Coss) Excellent profile
Avalanche Testing 100% tested
Gate Protection Zener-protected

Key Features

  • High voltage rating of 650 V, making it suitable for high-power applications.
  • Low on-resistance of 0.15 Ohm (typ.), reducing power losses and improving efficiency.
  • High drain current of 20 A, supporting high-current applications.
  • Excellent output capacitance (Coss) profile, which helps in reducing switching losses.
  • 100% avalanche tested, ensuring robustness and reliability under extreme conditions.
  • Zener-protected gate, providing enhanced protection against voltage spikes.

Applications

  • Power conversion systems (e.g., DC-DC converters, AC-DC converters).
  • Motor control and drive systems.
  • High-power switching applications.
  • Industrial power supplies.
  • Automotive systems requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the STB28N65M2?

    The maximum drain-source voltage (VDS) is 650 V.

  2. What is the typical on-resistance of the STB28N65M2?

    The typical on-resistance (RDS(on)) is 0.15 Ohm.

  3. What is the maximum drain current of the STB28N65M2?

    The maximum drain current (ID) is 20 A.

  4. What package type is the STB28N65M2 available in?

    The STB28N65M2 is available in the D2PAK package.

  5. Is the STB28N65M2 protected against avalanche conditions?

    Yes, the STB28N65M2 is 100% avalanche tested.

  6. What is the power dissipation capability of the STB28N65M2?

    The power dissipation (PD) is 170 W.

  7. Does the STB28N65M2 have any gate protection features?

    Yes, the STB28N65M2 has Zener-protected gates.

  8. What are some common applications for the STB28N65M2?

    Common applications include power conversion systems, motor control, high-power switching, industrial power supplies, and automotive systems.

  9. How does the STB28N65M2 perform in terms of output capacitance?

    The STB28N65M2 has an excellent output capacitance (Coss) profile.

  10. Is the STB28N65M2 suitable for high-current applications?

    Yes, with a high drain current of 20 A, it is suitable for high-current applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1440 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):170W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$3.86
35

Please send RFQ , we will respond immediately.

Same Series
STW28N65M2
STW28N65M2
MOSFET N-CH 650V 20A TO247
STF28N65M2
STF28N65M2
MOSFET N-CH 650V 20A TO220FP
STP28N65M2
STP28N65M2
MOSFET N-CH 650V 20A TO220

Similar Products

Part Number STB28N65M2 STB24N65M2 STB28N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 16A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 10A, 10V 230mOhm @ 8A, 10V 150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 29 nC @ 10 V 36 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1440 pF @ 100 V 1060 pF @ 100 V 1440 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 170W (Tc) 150W (Tc) 170W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK

Related Product By Brand

ESDA6V1-5SC6Y
ESDA6V1-5SC6Y
STMicroelectronics
TVS DIODE 5.2VWM 11.4VC SOT23-6
STPS3150UF
STPS3150UF
STMicroelectronics
DIODE SCHOTTKY 150V 3A SMBFLAT
STF140N6F7
STF140N6F7
STMicroelectronics
MOSFET N-CH 60V 70A TO220FP
STL160N4F7
STL160N4F7
STMicroelectronics
MOSFET N-CH 40V 120A POWERFLAT
STHVDAC-303F6
STHVDAC-303F6
STMicroelectronics
IC DAC 8BIT 16FLIPCHIP
STM8AF6223IPCX
STM8AF6223IPCX
STMicroelectronics
IC MCU 8BIT 4KB FLASH 20TSSOP
HCF4069YUM013TR
HCF4069YUM013TR
STMicroelectronics
IC INVERTER 6CH 1 INP
VNS3NV04D-E
VNS3NV04D-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VND5E006ASP-E
VND5E006ASP-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 PWRSO16
STM1811LWX7F
STM1811LWX7F
STMicroelectronics
IC SUPERVISOR 1 CHANNEL SOT23-3
LD1117AS25TR
LD1117AS25TR
STMicroelectronics
IC REG LINEAR 2.5V 1A SOT223
PM8908TR
PM8908TR
STMicroelectronics
IC REG CONV DDR 1OUT 20QFN