STD7NM60N
  • Share:

STMicroelectronics STD7NM60N

Manufacturer No:
STD7NM60N
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD7NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh technology. This device combines a vertical structure with STMicroelectronics' strip layout, resulting in one of the world's lowest on-resistance and gate charge. This makes it highly suitable for demanding high-efficiency converters. The STD7NM60N is packaged in a DPAK (TO-252) package, which is environmentally compliant and available in various ECOPACK grades.

Key Specifications

Parameter Value Unit
VDS (Drain-source voltage) 600 V
VGS (Gate-source voltage) ±25 V
ID (Drain current, continuous) at TC = 25 °C 5 A
ID (Drain current, continuous) at TC = 100 °C 3 A
IDM (Drain current, pulsed) 20 A
PTOT (Total power dissipation) at TC = 25 °C 45 W
TJ (Operating junction temperature range) -55 to 150 °C
Tstg (Storage temperature range) -55 to 150 °C
RDS(on) (Drain-source on-resistance) typ. 800 mΩ
VGS(th) (Gate threshold voltage) 2-4 V
ISD (Source-drain current) 5 A
VSD (Forward on voltage) 1.3 V

Key Features

  • Low input capacitance and gate charge
  • Low gate input resistance
  • 100% avalanche tested
  • High efficiency due to low on-resistance and gate charge
  • Vertical structure combined with strip layout for enhanced performance
  • Environmentally compliant ECOPACK packaging

Applications

The STD7NM60N is suitable for various high-efficiency switching applications, including:

  • High-efficiency converters
  • Power supplies
  • Motor control systems
  • Industrial power management
  • Automotive systems requiring high reliability and efficiency

Q & A

  1. What is the maximum drain-source voltage of the STD7NM60N?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance of the STD7NM60N?

    The typical drain-source on-resistance (RDS(on)) is 800 mΩ.

  3. What is the maximum continuous drain current at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 5 A.

  4. What is the operating junction temperature range of the STD7NM60N?

    The operating junction temperature range (TJ) is -55 to 150 °C.

  5. What is the typical gate threshold voltage?

    The typical gate threshold voltage (VGS(th)) is between 2 and 4 V.

  6. Is the STD7NM60N avalanche tested?

    Yes, the STD7NM60N is 100% avalanche tested.

  7. What type of package is the STD7NM60N available in?

    The STD7NM60N is available in a DPAK (TO-252) package.

  8. What are some common applications for the STD7NM60N?

    Common applications include high-efficiency converters, power supplies, motor control systems, industrial power management, and automotive systems.

  9. What is the maximum total power dissipation at 25 °C?

    The maximum total power dissipation (PTOT) at 25 °C is 45 W.

  10. Is the STD7NM60N environmentally compliant?

    Yes, the STD7NM60N is available in environmentally compliant ECOPACK packages.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:363 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$2.22
355

Please send RFQ , we will respond immediately.

Same Series
STD7NM60N
STD7NM60N
MOSFET N-CH 600V 5A DPAK
STF7NM60N
STF7NM60N
MOSFET N-CH 600V 5A TO220FP
STP7NM60N
STP7NM60N
MOSFET N-CH 600V 5A TO220

Similar Products

Part Number STD7NM60N STD7NM64N STD9NM60N STD8NM60N STD6NM60N STD7ANM60N STD7NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Obsolete Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 640 V 600 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc) 5A (Tc) 6.5A (Tc) 7A (Tc) 4.6A (Tc) 5A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 2.5A, 10V 1.05Ohm @ 2.5A, 10V 745mOhm @ 3.25A, 10V 650mOhm @ 3.5A, 10V 920mOhm @ 2.3A, 10V 900mOhm @ 2.5A, 10V 780mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 14 nC @ 10 V 17.4 nC @ 10 V 19 nC @ 10 V 13 nC @ 10 V 14 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 363 pF @ 50 V 363 pF @ 50 V 452 pF @ 50 V 560 pF @ 50 V 420 pF @ 50 V 363 pF @ 50 V 400 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 45W (Tc) 60W (Tc) 70W (Tc) 70W (Tc) 45W (Tc) 45W (Tc) 45W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

NUCLEO-F303RE
NUCLEO-F303RE
STMicroelectronics
NUCLEO-64 STM32F303RE EVAL BRD
STPS160H100TV
STPS160H100TV
STMicroelectronics
DIODE MODULE 100V 80A ISOTOP
STPS40M80CT
STPS40M80CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 80V TO220AB
BTA16-600SWRG
BTA16-600SWRG
STMicroelectronics
TRIAC SENS GATE 600V 16A TO220AB
BD678A
BD678A
STMicroelectronics
TRANS PNP DARL 60V 4A SOT32-3
STL6P3LLH6
STL6P3LLH6
STMicroelectronics
MOSFET P-CH 30V 6A POWERFLAT
STH410N4F7-6AG
STH410N4F7-6AG
STMicroelectronics
MOSFET N-CH 40V 200A H2PAK-6
TS274AIPT
TS274AIPT
STMicroelectronics
IC CMOS 4 CIRCUIT 14TSSOP
L6201PS
L6201PS
STMicroelectronics
IC MOTOR DRIVER PAR 20POWERSO
VNQ5050AKTR-E
VNQ5050AKTR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
L9950
L9950
STMicroelectronics
IC DRIVER DOOR ACTUATOR PWRSO-36
L6599ATDTR
L6599ATDTR
STMicroelectronics
IC RESONANT CONVRTR CTRLR 16SOIC