STD7NM60N
  • Share:

STMicroelectronics STD7NM60N

Manufacturer No:
STD7NM60N
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD7NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh technology. This device combines a vertical structure with STMicroelectronics' strip layout, resulting in one of the world's lowest on-resistance and gate charge. This makes it highly suitable for demanding high-efficiency converters. The STD7NM60N is packaged in a DPAK (TO-252) package, which is environmentally compliant and available in various ECOPACK grades.

Key Specifications

Parameter Value Unit
VDS (Drain-source voltage) 600 V
VGS (Gate-source voltage) ±25 V
ID (Drain current, continuous) at TC = 25 °C 5 A
ID (Drain current, continuous) at TC = 100 °C 3 A
IDM (Drain current, pulsed) 20 A
PTOT (Total power dissipation) at TC = 25 °C 45 W
TJ (Operating junction temperature range) -55 to 150 °C
Tstg (Storage temperature range) -55 to 150 °C
RDS(on) (Drain-source on-resistance) typ. 800 mΩ
VGS(th) (Gate threshold voltage) 2-4 V
ISD (Source-drain current) 5 A
VSD (Forward on voltage) 1.3 V

Key Features

  • Low input capacitance and gate charge
  • Low gate input resistance
  • 100% avalanche tested
  • High efficiency due to low on-resistance and gate charge
  • Vertical structure combined with strip layout for enhanced performance
  • Environmentally compliant ECOPACK packaging

Applications

The STD7NM60N is suitable for various high-efficiency switching applications, including:

  • High-efficiency converters
  • Power supplies
  • Motor control systems
  • Industrial power management
  • Automotive systems requiring high reliability and efficiency

Q & A

  1. What is the maximum drain-source voltage of the STD7NM60N?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance of the STD7NM60N?

    The typical drain-source on-resistance (RDS(on)) is 800 mΩ.

  3. What is the maximum continuous drain current at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 5 A.

  4. What is the operating junction temperature range of the STD7NM60N?

    The operating junction temperature range (TJ) is -55 to 150 °C.

  5. What is the typical gate threshold voltage?

    The typical gate threshold voltage (VGS(th)) is between 2 and 4 V.

  6. Is the STD7NM60N avalanche tested?

    Yes, the STD7NM60N is 100% avalanche tested.

  7. What type of package is the STD7NM60N available in?

    The STD7NM60N is available in a DPAK (TO-252) package.

  8. What are some common applications for the STD7NM60N?

    Common applications include high-efficiency converters, power supplies, motor control systems, industrial power management, and automotive systems.

  9. What is the maximum total power dissipation at 25 °C?

    The maximum total power dissipation (PTOT) at 25 °C is 45 W.

  10. Is the STD7NM60N environmentally compliant?

    Yes, the STD7NM60N is available in environmentally compliant ECOPACK packages.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:363 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$2.22
355

Please send RFQ , we will respond immediately.

Same Series
STU7NM60N
STU7NM60N
MOSFET N-CH 600V 5A IPAK
STF7NM60N
STF7NM60N
MOSFET N-CH 600V 5A TO220FP
STP7NM60N
STP7NM60N
MOSFET N-CH 600V 5A TO220

Similar Products

Part Number STD7NM60N STD7NM64N STD9NM60N STD8NM60N STD6NM60N STD7ANM60N STD7NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Obsolete Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 640 V 600 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc) 5A (Tc) 6.5A (Tc) 7A (Tc) 4.6A (Tc) 5A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 2.5A, 10V 1.05Ohm @ 2.5A, 10V 745mOhm @ 3.25A, 10V 650mOhm @ 3.5A, 10V 920mOhm @ 2.3A, 10V 900mOhm @ 2.5A, 10V 780mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 14 nC @ 10 V 17.4 nC @ 10 V 19 nC @ 10 V 13 nC @ 10 V 14 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 363 pF @ 50 V 363 pF @ 50 V 452 pF @ 50 V 560 pF @ 50 V 420 pF @ 50 V 363 pF @ 50 V 400 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 45W (Tc) 60W (Tc) 70W (Tc) 70W (Tc) 45W (Tc) 45W (Tc) 45W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247

Related Product By Brand

STW18NM60ND
STW18NM60ND
STMicroelectronics
MOSFET N-CH 600V 13A TO247
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STM32L011F3P6TR
STM32L011F3P6TR
STMicroelectronics
IC MCU 32BIT 8KB FLASH 20TSSOP
STM32F100VDT6B
STM32F100VDT6B
STMicroelectronics
IC MCU 32BIT 384KB FLASH 100LQFP
STM32F215VET6
STM32F215VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
ST232BD
ST232BD
STMicroelectronics
IC TRANSCEIVER FULL 2/2 16SO
VNN3NV04PTR-E
VNN3NV04PTR-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 SOT223
VNQ6004SA-E
VNQ6004SA-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
ST1S50PUR
ST1S50PUR
STMicroelectronics
IC REG BUCK ADJ 4A 10VFDFPN
L78L12ACZ-TR
L78L12ACZ-TR
STMicroelectronics
IC REG LINEAR 12V 100MA TO92-3
ISM330DHCXTR
ISM330DHCXTR
STMicroelectronics
INEMO INERTIAL MODULE: ALWAYS-ON
LM335ADT
LM335ADT
STMicroelectronics
SENSOR ANALOG -40C-100C 8SOIC