STD7NM60N
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STMicroelectronics STD7NM60N

Manufacturer No:
STD7NM60N
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 5A DPAK
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The STD7NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh technology. This device combines a vertical structure with STMicroelectronics' strip layout, resulting in one of the world's lowest on-resistance and gate charge. This makes it highly suitable for demanding high-efficiency converters. The STD7NM60N is packaged in a DPAK (TO-252) package, which is environmentally compliant and available in various ECOPACK grades.

Key Specifications

Parameter Value Unit
VDS (Drain-source voltage) 600 V
VGS (Gate-source voltage) ±25 V
ID (Drain current, continuous) at TC = 25 °C 5 A
ID (Drain current, continuous) at TC = 100 °C 3 A
IDM (Drain current, pulsed) 20 A
PTOT (Total power dissipation) at TC = 25 °C 45 W
TJ (Operating junction temperature range) -55 to 150 °C
Tstg (Storage temperature range) -55 to 150 °C
RDS(on) (Drain-source on-resistance) typ. 800 mΩ
VGS(th) (Gate threshold voltage) 2-4 V
ISD (Source-drain current) 5 A
VSD (Forward on voltage) 1.3 V

Key Features

  • Low input capacitance and gate charge
  • Low gate input resistance
  • 100% avalanche tested
  • High efficiency due to low on-resistance and gate charge
  • Vertical structure combined with strip layout for enhanced performance
  • Environmentally compliant ECOPACK packaging

Applications

The STD7NM60N is suitable for various high-efficiency switching applications, including:

  • High-efficiency converters
  • Power supplies
  • Motor control systems
  • Industrial power management
  • Automotive systems requiring high reliability and efficiency

Q & A

  1. What is the maximum drain-source voltage of the STD7NM60N?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance of the STD7NM60N?

    The typical drain-source on-resistance (RDS(on)) is 800 mΩ.

  3. What is the maximum continuous drain current at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 5 A.

  4. What is the operating junction temperature range of the STD7NM60N?

    The operating junction temperature range (TJ) is -55 to 150 °C.

  5. What is the typical gate threshold voltage?

    The typical gate threshold voltage (VGS(th)) is between 2 and 4 V.

  6. Is the STD7NM60N avalanche tested?

    Yes, the STD7NM60N is 100% avalanche tested.

  7. What type of package is the STD7NM60N available in?

    The STD7NM60N is available in a DPAK (TO-252) package.

  8. What are some common applications for the STD7NM60N?

    Common applications include high-efficiency converters, power supplies, motor control systems, industrial power management, and automotive systems.

  9. What is the maximum total power dissipation at 25 °C?

    The maximum total power dissipation (PTOT) at 25 °C is 45 W.

  10. Is the STD7NM60N environmentally compliant?

    Yes, the STD7NM60N is available in environmentally compliant ECOPACK packages.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:363 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD7NM60N STD7NM64N STD9NM60N STD8NM60N STD6NM60N STD7ANM60N STD7NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Obsolete Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 640 V 600 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc) 5A (Tc) 6.5A (Tc) 7A (Tc) 4.6A (Tc) 5A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 2.5A, 10V 1.05Ohm @ 2.5A, 10V 745mOhm @ 3.25A, 10V 650mOhm @ 3.5A, 10V 920mOhm @ 2.3A, 10V 900mOhm @ 2.5A, 10V 780mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V 14 nC @ 10 V 17.4 nC @ 10 V 19 nC @ 10 V 13 nC @ 10 V 14 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 363 pF @ 50 V 363 pF @ 50 V 452 pF @ 50 V 560 pF @ 50 V 420 pF @ 50 V 363 pF @ 50 V 400 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 45W (Tc) 60W (Tc) 70W (Tc) 70W (Tc) 45W (Tc) 45W (Tc) 45W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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