Overview
The STD9NM60N is an N-channel Power MOSFET developed by STMicroelectronics, utilizing the second generation of MDmesh™ technology. This device is renowned for its low on-resistance and gate charge, making it highly suitable for high-efficiency converters. Available in a DPAK package, the STD9NM60N combines a vertical structure with STMicroelectronics' strip layout, resulting in one of the world's lowest on-resistance and gate charge values.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 600 | V |
| RDS(on) max. (On-Resistance) | 0.745 | Ω |
| ID (Drain Current) | 6.5 | A |
| Package | DPAK | |
| Input Capacitance (Ciss) at VDS = 50 V, f = 1 MHz, VGS = 0 V | 452 | pF |
| Output Capacitance (Coss) at VDS = 50 V, f = 1 MHz, VGS = 0 V | 30 | pF |
| Reverse Transfer Capacitance (Crss) at VDS = 50 V, f = 1 MHz, VGS = 0 V | 1.45 | pF |
| Gate Input Resistance (Rg) at f = 1 MHz, ID = 0 A | 4.8 | Ω |
| Total Gate Charge (Qg) at VDD = 480 V, ID = 6.5 A, VGS = 0 to 10 V | 17.4 | nC |
| Turn-on Delay Time (td(on)) at VDD = 480 V, ID = 6.5 A, RG = 4.7 Ω, VGS = 10 V | 28 | ns |
| Rise Time (tr) at VDD = 480 V, ID = 6.5 A, RG = 4.7 Ω, VGS = 10 V | 23 | ns |
| Turn-off Delay Time (td(off)) at VDD = 480 V, ID = 6.5 A, RG = 4.7 Ω, VGS = 10 V | 52.5 | ns |
| Fall Time (tf) at VDD = 480 V, ID = 6.5 A, RG = 4.7 Ω, VGS = 10 V | 26.7 | ns |
Key Features
- Low on-resistance (RDS(on)) of 0.745 Ω max.
- Low input capacitance and gate charge.
- Low gate input resistance.
- 100% avalanche tested.
- Available in DPAK package.
- ECOPACK® compliant packages for environmental sustainability.
Applications
- Switching applications.
- High-efficiency converters.
- Power management systems requiring low on-resistance and high efficiency.
Q & A
- What is the maximum drain-source voltage (VDS) of the STD9NM60N?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance (RDS(on)) of the STD9NM60N?
The typical on-resistance (RDS(on)) is 0.63 Ω.
- What is the maximum drain current (ID) of the STD9NM60N?
The maximum drain current (ID) is 6.5 A.
- In which package is the STD9NM60N available?
The STD9NM60N is available in a DPAK package.
- What technology is used in the STD9NM60N?
The STD9NM60N uses the second generation of MDmesh™ technology.
- What are some key features of the STD9NM60N?
Key features include low on-resistance, low input capacitance and gate charge, and low gate input resistance.
- Is the STD9NM60N environmentally compliant?
Yes, the STD9NM60N is available in ECOPACK® compliant packages.
- What are typical applications for the STD9NM60N?
Typical applications include switching applications and high-efficiency converters.
- What is the turn-on delay time (td(on)) of the STD9NM60N?
The turn-on delay time (td(on)) is typically 28 ns.
- What is the total gate charge (Qg) of the STD9NM60N?
The total gate charge (Qg) is 17.4 nC at VDD = 480 V, ID = 6.5 A, and VGS = 0 to 10 V.
