STN1NF10
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STMicroelectronics STN1NF10

Manufacturer No:
STN1NF10
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 1A SOT-223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STN1NF10 is a N-channel power MOSFET manufactured by STMicroelectronics. It is part of the STripFET™ II family, which utilizes STMicroelectronics' unique 'Single Feature Size™' strip-based process. This technology enhances the device's performance and efficiency. Although the STN1NF10 is currently obsolete and no longer manufactured, it remains an important component in understanding the evolution of power MOSFET technology.

Key Specifications

ParameterValue
Channel TypeN-channel
Drain-Source Voltage (Vds)100 V
On-State Resistance (Rds(on))0.7 Ω
Continuous Drain Current (Id)1 A
Package TypeSOT-223

Key Features

  • Utilizes STMicroelectronics' 'Single Feature Size™' strip-based process for enhanced performance and efficiency.
  • Low on-state resistance (Rds(on)) of 0.7 Ω, reducing power losses.
  • High drain-source voltage (Vds) of 100 V, suitable for various high-voltage applications.
  • Continuous drain current (Id) of 1 A, supporting a range of load requirements.
  • SOT-223 package, offering a compact and reliable design.

Applications

The STN1NF10 is suitable for a variety of applications requiring high efficiency and reliability, such as:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive and industrial electronics.
  • Switching and power management circuits.

Q & A

  1. What is the channel type of the STN1NF10 MOSFET? The STN1NF10 is an N-channel MOSFET.
  2. What is the maximum drain-source voltage (Vds) of the STN1NF10? The maximum drain-source voltage is 100 V.
  3. What is the on-state resistance (Rds(on)) of the STN1NF10? The on-state resistance is 0.7 Ω.
  4. What is the continuous drain current (Id) of the STN1NF10? The continuous drain current is 1 A.
  5. What package type is the STN1NF10 available in? The STN1NF10 is available in the SOT-223 package.
  6. Is the STN1NF10 still in production? No, the STN1NF10 is obsolete and no longer manufactured.
  7. What technology does the STN1NF10 use? The STN1NF10 uses STMicroelectronics' 'Single Feature Size™' strip-based process.
  8. What are some typical applications for the STN1NF10? Typical applications include power supplies, motor control systems, automotive electronics, and switching circuits.
  9. Why is the STN1NF10 considered efficient? The STN1NF10 is considered efficient due to its low on-state resistance and high voltage handling capabilities.
  10. Where can I find substitutes for the STN1NF10? Substitutes can be found through distributors such as Digi-Key, Mouser, or by consulting the manufacturer's recommendations.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:800mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:105 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number STN1NF10 STN1NF20 STN2NF10
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 200 V 100 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc) 1A (Tc) 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 500mA, 10V 1.5Ohm @ 500mA, 10V 260mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V 5.7 nC @ 10 V 14 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 105 pF @ 25 V 90 pF @ 25 V 280 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Tc) 2W (Ta) 3.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223 SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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