Overview
The STN2NF10 is a medium-voltage N-channel power MOSFET produced by STMicroelectronics. It is part of the STripFET™ II family, known for its high packing density, low on-resistance, and rugged avalanche characteristics. This MOSFET is designed for high-performance applications requiring efficient power management and reliability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 100 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 2.4 | A |
| Continuous Drain Current (ID) at TC = 100°C | 1.5 | A |
| Pulsed Drain Current (IDM) | 17 | A |
| Static Drain-Source On Resistance (RDS(on)) at VGS = 10V, ID = 1.2A | 0.23 - 0.26 | Ω |
| Total Dissipation at TC = 25°C | 3.3 | W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 38 - 62.5 | °C/W |
| Operating Junction Temperature | -55 to 150 | °C |
| Storage Temperature | -55 to 150 | °C |
Key Features
- High packing density for low on-resistance.
- Rugged avalanche characteristics.
- Less critical alignment steps for improved manufacturing reproducibility.
- ECOPACK® packages with Lead-free second level interconnect.
- Low static drain-source on resistance (RDS(on)) of 0.23 - 0.26 Ω at VGS = 10V, ID = 1.2A.
- High continuous drain current of 2.4 A at TC = 25°C.
- High pulsed drain current of 17 A.
Applications
The STN2NF10 is suitable for a variety of applications, including:
- Switching applications such as DC-DC converters.
- Industrial and automotive applications requiring medium-voltage power management.
- High-performance power electronics where efficiency and reliability are critical.
Q & A
- What is the maximum drain-source voltage of the STN2NF10?
The maximum drain-source voltage (VDS) is 100 V. - What is the continuous drain current at 25°C and 100°C?
The continuous drain current is 2.4 A at 25°C and 1.5 A at 100°C. - What is the typical on-resistance of the STN2NF10?
The typical static drain-source on resistance (RDS(on)) is 0.23 - 0.26 Ω at VGS = 10V, ID = 1.2A. - What is the thermal resistance junction-ambient of the STN2NF10?
The thermal resistance junction-ambient (Rthj-amb) is 38 °C/W for t < 10sec and 62.5 °C/W for t > 10sec. - What are the operating and storage temperature ranges?
The operating junction temperature range is -55 to 150 °C, and the storage temperature range is also -55 to 150 °C. - What type of package does the STN2NF10 come in?
The STN2NF10 comes in an SOT-223 package with ECOPACK® Lead-free second level interconnect. - What are some typical applications for the STN2NF10?
Typical applications include switching applications like DC-DC converters, industrial, and automotive applications. - What is the maximum pulsed drain current of the STN2NF10?
The maximum pulsed drain current (IDM) is 17 A. - What is the single pulse avalanche energy of the STN2NF10?
The single pulse avalanche energy (EAS) is 200 mJ. - What is the peak diode recovery voltage slope of the STN2NF10?
The peak diode recovery voltage slope (dv/dt) is 30 V/ns.
