STN2NE10
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STMicroelectronics STN2NE10

Manufacturer No:
STN2NE10
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 2A SOT-223
Delivery:
Payment:
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Product Introduction

Overview

The STN2NE10 is a high-performance N-channel power MOSFET developed by STMicroelectronics. It is part of the company's advanced 'Single Feature Size™' strip-based process, which enhances its electrical characteristics and reliability. This MOSFET is packaged in a SOT-223 format, making it suitable for a variety of applications requiring high power density and efficiency.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)100 V
RDS(on) (On-State Resistance)0.33 Ω
ID (Drain Current)2 A
PD (Power Dissipation)Dependent on package and thermal conditions
TJ (Junction Temperature)-55°C to 150°C
PackageSOT-223

Key Features

  • High voltage rating of 100 V, making it suitable for high-power applications.
  • Low on-state resistance (RDS(on)) of 0.33 Ω, which minimizes power losses.
  • High drain current (ID) of 2 A, enabling it to handle substantial current loads.
  • Compact SOT-223 package, which is ideal for space-constrained designs.
  • Advanced 'Single Feature Size™' strip-based process for enhanced performance and reliability.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive electronics, including battery management and power steering.
  • Industrial control systems, such as motor drives and power inverters.
  • Consumer electronics requiring high power density and efficiency.

Q & A

  1. What is the maximum drain-source voltage of the STN2NE10?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the on-state resistance (RDS(on)) of the STN2NE10?
    The on-state resistance is 0.33 Ω.
  3. What is the maximum drain current (ID) of the STN2NE10?
    The maximum drain current is 2 A.
  4. What package type is the STN2NE10 available in?
    The STN2NE10 is available in a SOT-223 package.
  5. What is the operating junction temperature range of the STN2NE10?
    The operating junction temperature range is -55°C to 150°C.
  6. What is the 'Single Feature Size™' strip-based process?
    This is an advanced manufacturing process developed by STMicroelectronics that enhances the electrical characteristics and reliability of the MOSFET.
  7. Where can I find detailed specifications for the STN2NE10?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website or through distributors like Digi-Key.
  8. What are some common applications for the STN2NE10?
    Common applications include power supplies, motor control systems, automotive electronics, industrial control systems, and consumer electronics requiring high power density.
  9. How does the STN2NE10 compare to other MOSFETs in terms of power density?
    The STN2NE10 offers high power density due to its low on-state resistance and high current handling capability, making it a competitive choice in its class.
  10. Is the STN2NE10 suitable for high-frequency applications?
    Yes, the STN2NE10 is suitable for high-frequency applications due to its low switching losses and fast switching times.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:400mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:305 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number STN2NE10 STN2NF10 STN2NE10L
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc) 2.4A (Tc) 1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 5V, 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 1A, 10V 260mOhm @ 1.2A, 10V 400mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 14 nC @ 10 V 14 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 305 pF @ 25 V 280 pF @ 25 V 345 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Tc) 3.3W (Tc) 2.5W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223 SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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