STN1HNK60
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STMicroelectronics STN1HNK60

Manufacturer No:
STN1HNK60
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 400MA SOT223
Delivery:
Payment:
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Product Introduction

Overview

The STN1HNK60 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ technology. This device is designed to offer a significant reduction in on-resistance and enhanced dv/dt capability, making it suitable for demanding applications. Available in SOT-223 and TO-92 packages, the STN1HNK60 is optimized for high-performance switching applications.

Key Specifications

ParameterValueUnit
Drain-source voltage (VDS)600V
Gate-source voltage (VGS)±30V
Continuous drain current (ID) at TC = 25 °C0.4A
Pulsed drain current (IDM)1.6A
Static drain-source on-resistance (RDS(on))7.3 (typ.), 8.5 (max.)Ω
Gate threshold voltage (VGS(th))2.25 - 3.7V
Thermal resistance junction-ambient (Rthj-amb)120°C/W
Operating junction temperature range (Tj)-55 to 150°C
PackageSOT-223, TO-92

Key Features

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Zener-protected for enhanced reliability
  • High-performance SuperMESH™ technology
  • Available in ECOPACK® packages for environmental compliance

Applications

The STN1HNK60 is primarily used in switching applications where high voltage and low on-resistance are critical. These include but are not limited to:

  • Power supplies and converters
  • Motor control and drives
  • High-frequency switching circuits
  • Industrial and automotive systems requiring high reliability and performance

Q & A

  1. What is the maximum drain-source voltage of the STN1HNK60?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the typical on-resistance of the STN1HNK60?
    The typical static drain-source on-resistance (RDS(on)) is 7.3 Ω.
  3. What are the package options for the STN1HNK60?
    The STN1HNK60 is available in SOT-223 and TO-92 packages.
  4. What is the maximum continuous drain current at 25 °C?
    The maximum continuous drain current (ID) at 25 °C is 0.4 A.
  5. What is the gate-source voltage range?
    The gate-source voltage (VGS) range is ±30 V.
  6. What is the operating junction temperature range?
    The operating junction temperature range (Tj) is -55 to 150 °C.
  7. What technology is used in the STN1HNK60?
    The STN1HNK60 uses the SuperMESH™ technology.
  8. Is the STN1HNK60 100% avalanche tested?
    Yes, the STN1HNK60 is 100% avalanche tested.
  9. What are some typical applications for the STN1HNK60?
    Typical applications include power supplies, motor control, high-frequency switching circuits, and industrial/automotive systems.
  10. Does the STN1HNK60 come in environmentally compliant packages?
    Yes, the STN1HNK60 is available in ECOPACK® packages for environmental compliance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:156 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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