STN1HNK60
  • Share:

STMicroelectronics STN1HNK60

Manufacturer No:
STN1HNK60
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 400MA SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STN1HNK60 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ technology. This device is designed to offer a significant reduction in on-resistance and enhanced dv/dt capability, making it suitable for demanding applications. Available in SOT-223 and TO-92 packages, the STN1HNK60 is optimized for high-performance switching applications.

Key Specifications

ParameterValueUnit
Drain-source voltage (VDS)600V
Gate-source voltage (VGS)±30V
Continuous drain current (ID) at TC = 25 °C0.4A
Pulsed drain current (IDM)1.6A
Static drain-source on-resistance (RDS(on))7.3 (typ.), 8.5 (max.)Ω
Gate threshold voltage (VGS(th))2.25 - 3.7V
Thermal resistance junction-ambient (Rthj-amb)120°C/W
Operating junction temperature range (Tj)-55 to 150°C
PackageSOT-223, TO-92

Key Features

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Zener-protected for enhanced reliability
  • High-performance SuperMESH™ technology
  • Available in ECOPACK® packages for environmental compliance

Applications

The STN1HNK60 is primarily used in switching applications where high voltage and low on-resistance are critical. These include but are not limited to:

  • Power supplies and converters
  • Motor control and drives
  • High-frequency switching circuits
  • Industrial and automotive systems requiring high reliability and performance

Q & A

  1. What is the maximum drain-source voltage of the STN1HNK60?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the typical on-resistance of the STN1HNK60?
    The typical static drain-source on-resistance (RDS(on)) is 7.3 Ω.
  3. What are the package options for the STN1HNK60?
    The STN1HNK60 is available in SOT-223 and TO-92 packages.
  4. What is the maximum continuous drain current at 25 °C?
    The maximum continuous drain current (ID) at 25 °C is 0.4 A.
  5. What is the gate-source voltage range?
    The gate-source voltage (VGS) range is ±30 V.
  6. What is the operating junction temperature range?
    The operating junction temperature range (Tj) is -55 to 150 °C.
  7. What technology is used in the STN1HNK60?
    The STN1HNK60 uses the SuperMESH™ technology.
  8. Is the STN1HNK60 100% avalanche tested?
    Yes, the STN1HNK60 is 100% avalanche tested.
  9. What are some typical applications for the STN1HNK60?
    Typical applications include power supplies, motor control, high-frequency switching circuits, and industrial/automotive systems.
  10. Does the STN1HNK60 come in environmentally compliant packages?
    Yes, the STN1HNK60 is available in ECOPACK® packages for environmental compliance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:156 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

$1.14
622

Please send RFQ , we will respond immediately.

Same Series
STN1HNK60
STN1HNK60
MOSFET N-CH 600V 400MA SOT223
STD1NK60T4
STD1NK60T4
MOSFET N-CH 600V 1A DPAK
STD1NK60-1
STD1NK60-1
MOSFET N-CH 600V 1A IPAK

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

STTH60AC06CW
STTH60AC06CW
STMicroelectronics
DIODE ARRAY GP 600V 30A TO247
STGW80H65DFB-4
STGW80H65DFB-4
STMicroelectronics
IGBT BIPO 650V 80A TO247
M41T83SQA6F
M41T83SQA6F
STMicroelectronics
IC RTC CLK/CALENDAR I2C 16-QFN
STM32F427VGT6TR
STM32F427VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32L562VET6
STM32L562VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STG3157CTR
STG3157CTR
STMicroelectronics
IC SWITCH SPDT SINGLE SOT323-6L
TS393IPT
TS393IPT
STMicroelectronics
IC COMPARATOR DUAL MCRPWR 8TSSOP
M27C160-100F1
M27C160-100F1
STMicroelectronics
IC EPROM 16MBIT PARALLEL 42CDIP
VIPER122LSTR
VIPER122LSTR
STMicroelectronics
IC OFFLINE SW MULT TOP 10SSOP
VIPER100(022Y)
VIPER100(022Y)
STMicroelectronics
IC OFFLIN CONV FLBACK 5PENTAWATT
LF25CDT-TRY
LF25CDT-TRY
STMicroelectronics
IC REG LINEAR 2.5V 500MA DPAK
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN