Overview
The STD1NK60-1 is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is designed to offer enhanced performance and reliability in various power management applications. The SuperMESH technology optimizes the PowerMESH layout, resulting in a significant reduction in on-resistance and improved dv/dt capability, making it suitable for demanding applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-source voltage) | 600 | V |
| VGS (Gate-source voltage) | ±30 | V |
| ID (Drain current, continuous) at TC = 25 °C | 1 | A |
| ID (Drain current, continuous) at TC = 100 °C | 0.63 | A |
| IDM (Drain current, pulsed) | 4 | A |
| PTOT (Total power dissipation) at TC = 25 °C | 30 | W |
| RDS(on) (Static drain-source on-resistance) at VGS = 10V, ID = 0.5 A | 8.5 | Ω |
| Tstg (Storage temperature range) | -55 to 150 | °C |
| TJ (Operating junction temperature range) | -55 to 150 | °C |
| dv/dt (Peak diode recovery voltage slope) | 3 | V/ns |
Key Features
- Extremely high dv/dt capability, making it suitable for demanding applications.
- ESD improved capability for enhanced reliability.
- 100% avalanche tested to ensure robustness against transient conditions.
- Gate charge minimized, reducing switching losses and improving efficiency.
- SuperMESH technology for optimized on-resistance and performance.
Applications
- Low power battery chargers.
- Switch mode low power supplies (SMPS).
- Low power, ballast, and compact fluorescent lamps (CFL).
Q & A
- What is the maximum drain-source voltage of the STD1NK60-1 MOSFET?
The maximum drain-source voltage (VDS) is 600 V.
- What is the typical on-resistance of the STD1NK60-1?
The typical static drain-source on-resistance (RDS(on)) is 8.5 Ω at VGS = 10V and ID = 0.5 A.
- What are the storage and operating temperature ranges for the STD1NK60-1?
The storage temperature range is -55 to 150 °C, and the operating junction temperature range is also -55 to 150 °C.
- What is the peak diode recovery voltage slope (dv/dt) of the STD1NK60-1?
The peak diode recovery voltage slope (dv/dt) is 3 V/ns.
- Is the STD1NK60-1 ESD protected?
- What are some typical applications of the STD1NK60-1 MOSFET?
Typical applications include low power battery chargers, switch mode low power supplies (SMPS), and low power ballast and compact fluorescent lamps (CFL).
- What is the maximum continuous drain current at 25 °C and 100 °C?
The maximum continuous drain current is 1 A at 25 °C and 0.63 A at 100 °C.
- What is the maximum pulsed drain current?
The maximum pulsed drain current (IDM) is 4 A.
- What is the total power dissipation at 25 °C?
The total power dissipation (PTOT) at 25 °C is 30 W.
- Is the STD1NK60-1 100% avalanche tested?
