Overview
The STP80NF55-06 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device is part of the STripFET™ II family, which utilizes STMicroelectronics' unique 'Single Feature Size™' strip-based process. This technology results in extremely high packing density, low on-resistance, rugged avalanche characteristics, and improved manufacturing reproducibility. The STP80NF55-06 is available in various packages including TO-220, TO-220FP, D²PAK, and I²PAK, making it versatile for different application needs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 55 | V |
| Gate-source voltage (VGS) | ±20 | V |
| Drain current (continuous) at TC = 25°C (ID) | 80 (TO-220, D²PAK, I²PAK), 60 (TO-220FP) | A |
| Drain current (continuous) at TC = 100°C (ID) | 80 (TO-220, D²PAK, I²PAK), 42 (TO-220FP) | A |
| Drain current (pulsed) (IDM) | 320 (TO-220, D²PAK, I²PAK), 240 (TO-220FP) | A |
| Total dissipation at TC = 25°C (PTOT) | 300 (TO-220, D²PAK, I²PAK), 45 (TO-220FP) | W |
| Thermal resistance junction-case (RthJC) | 0.5 (TO-220, D²PAK, I²PAK), 3.33 (TO-220FP) | °C/W |
| Thermal resistance junction-ambient (RthJA) | 62.5 (TO-220, D²PAK, I²PAK) | °C/W |
| Static drain-source on resistance (RDS(on)) | < 0.0065 | Ω |
| Gate threshold voltage (VGS(th)) | 2 - 4 | V |
| Operating junction temperature (TJ) | -55 to 175 | °C |
Key Features
- Exceptional dv/dt capability: Ensures robust performance in high-frequency switching applications.
- 100% avalanche tested: Provides reliability and durability under extreme conditions.
- Low on-resistance (RDS(on)): Minimizes power losses and enhances efficiency.
- Rugged avalanche characteristics: Offers high reliability and stability in demanding applications.
- High packing density: Achieved through the 'Single Feature Size™' strip-based process, reducing the footprint and improving thermal performance.
- Versatile packaging options: Available in TO-220, TO-220FP, D²PAK, and I²PAK packages to suit various application requirements.
Applications
- Switching applications: Ideal for high-frequency switching in power supplies, motor drives, and other power electronics.
- Power management systems: Suitable for use in DC-DC converters, power factor correction (PFC) circuits, and other power management systems.
- Automotive and industrial systems: Can be used in various automotive and industrial applications requiring high power handling and reliability.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP80NF55-06?
The maximum drain-source voltage (VDS) is 55 V.
- What are the different package options available for the STP80NF55-06?
The device is available in TO-220, TO-220FP, D²PAK, and I²PAK packages.
- What is the typical on-resistance (RDS(on)) of the STP80NF55-06?
The typical on-resistance (RDS(on)) is less than 0.0065 Ω.
- What is the maximum continuous drain current (ID) at 25°C for the TO-220 package?
The maximum continuous drain current (ID) at 25°C for the TO-220 package is 80 A.
- What is the thermal resistance junction-case (RthJC) for the TO-220 package?
The thermal resistance junction-case (RthJC) for the TO-220 package is 0.5 °C/W.
- Is the STP80NF55-06 100% avalanche tested?
- What are the typical applications of the STP80NF55-06?
The STP80NF55-06 is typically used in switching applications, power management systems, and various automotive and industrial systems.
- What is the maximum operating junction temperature (TJ) for the STP80NF55-06?
The maximum operating junction temperature (TJ) is 175 °C.
- Does the STP80NF55-06 have exceptional dv/dt capability?
- What is the gate threshold voltage (VGS(th)) range for the STP80NF55-06?
The gate threshold voltage (VGS(th)) range is 2 to 4 V.
