STP80NF55-08
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STMicroelectronics STP80NF55-08

Manufacturer No:
STP80NF55-08
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 55V 80A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The STP80NF55-08 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device is part of the STripFET™ family, which utilizes a unique single feature size strip-based process. This technology enhances the transistor's packing density, resulting in low on-resistance, rugged avalanche characteristics, and improved manufacturing reproducibility. The STP80NF55-08 is available in TO-220, D2PAK, and TO-247 packages, making it versatile for various applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 55 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25 °C 80 A
Pulsed Drain Current (IDM) 320 A
Total Dissipation at TC = 25 °C 300 W
Thermal Resistance Junction-Case (Rthj-case) 0.5 °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 35 (TO-220), 50 (TO-247) °C/W
Static Drain-Source On Resistance (RDS(on)) < 0.008 Ω
Gate Threshold Voltage (VGS(th)) 2 - 4 V
Operating Junction Temperature -55 to 175 °C

Key Features

  • High Packing Density: The STripFET™ process ensures low on-resistance and high current handling capabilities.
  • Rugged Avalanche Characteristics: Enhanced robustness against avalanche conditions.
  • Low On-Resistance: RDS(on) of less than 0.008 Ω, making it suitable for high-efficiency applications.
  • Standard Threshold Drive: Compatible with standard gate drive circuits.
  • ECOPACK® Compliance: Available in environmentally friendly packages.

Applications

  • Switching Applications: Ideal for high-frequency switching in power supplies, motor control, and other power management systems.
  • Power Supplies: Suitable for use in DC-DC converters, SMPS, and other power supply applications.
  • Motor Control: Used in motor drive circuits due to its high current and low on-resistance characteristics.
  • Automotive Systems: Can be used in automotive applications where high reliability and performance are required.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP80NF55-08?

    The maximum drain-source voltage (VDS) is 55 V.

  2. What is the continuous drain current (ID) rating at 25 °C?

    The continuous drain current (ID) rating at 25 °C is 80 A.

  3. What is the typical on-resistance (RDS(on)) of the STP80NF55-08?

    The typical on-resistance (RDS(on)) is less than 0.008 Ω.

  4. What are the available package types for the STP80NF55-08?

    The device is available in TO-220, D2PAK, and TO-247 packages.

  5. What is the maximum operating junction temperature?

    The maximum operating junction temperature is 175 °C.

  6. What is the gate threshold voltage (VGS(th)) range?

    The gate threshold voltage (VGS(th)) range is 2 to 4 V.

  7. Is the STP80NF55-08 suitable for automotive applications?

    Yes, it can be used in automotive applications where high reliability and performance are required.

  8. What is the thermal resistance junction-case (Rthj-case) for the TO-220 package?

    The thermal resistance junction-case (Rthj-case) for the TO-220 package is 0.5 °C/W.

  9. What is the maximum pulse current (IDM) rating?

    The maximum pulse current (IDM) rating is 320 A.

  10. Is the STP80NF55-08 ECOPACK® compliant?

    Yes, the device is available in ECOPACK® compliant packages.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:155 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3850 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STB80NF55-08T4
STB80NF55-08T4
MOSFET N-CH 55V 80A D2PAK
STW80NF55-08
STW80NF55-08
MOSFET N-CH 55V 80A TO247-3

Similar Products

Part Number STP80NF55-08 STP80NF55-06
Manufacturer STMicroelectronics STMicroelectronics
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 40A, 10V 6.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V 189 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3850 pF @ 25 V 4400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

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