STP11NK50Z
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STMicroelectronics STP11NK50Z

Manufacturer No:
STP11NK50Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 10A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP11NK50Z is a high-performance N-Channel Power MOSFET produced by STMicroelectronics. This device is part of ST's STripFET F8 technology, which features an enhanced trench gate structure. It is designed to offer high reliability and efficiency in various power management applications. The MOSFET is known for its extremely high dv/dt capability, minimized gate charge, and very low intrinsic capacitances, making it suitable for demanding power conversion tasks.

Key Specifications

ParameterValue
Channel TypeN-Channel
Maximum Continuous Drain Current10 A
Maximum Drain Source Voltage500 V
Package TypeTO-220-3
Power Dissipation125 W
Avalanche Testing100% avalanche tested

Key Features

  • Extremely high dv/dt capability
  • Gate charge minimized
  • 100% avalanche tested
  • Very low intrinsic capacitances
  • Zener-protected
  • Enhanced trench gate structure using ST's STripFET F8 technology

Applications

The STP11NK50Z is ideal for various high-power applications, including:

  • Flyback converters
  • LED lighting systems
  • Power supplies and DC-DC converters
  • Motor control and drive systems

Q & A

  1. What is the maximum continuous drain current of the STP11NK50Z?
    The maximum continuous drain current is 10 A.
  2. What is the maximum drain-source voltage of the STP11NK50Z?
    The maximum drain-source voltage is 500 V.
  3. What package type does the STP11NK50Z come in?
    The STP11NK50Z comes in a TO-220-3 package.
  4. Is the STP11NK50Z avalanche tested?
    Yes, the STP11NK50Z is 100% avalanche tested.
  5. What technology does the STP11NK50Z use?
    The STP11NK50Z uses ST's STripFET F8 technology.
  6. What are some typical applications of the STP11NK50Z?
    Typical applications include flyback converters, LED lighting systems, power supplies, and motor control systems.
  7. What are the key features of the STP11NK50Z?
    The key features include extremely high dv/dt capability, minimized gate charge, very low intrinsic capacitances, and Zener protection.
  8. How much power can the STP11NK50Z dissipate?
    The STP11NK50Z can dissipate up to 125 W.
  9. Is the STP11NK50Z suitable for high-power conversion tasks?
    Yes, the STP11NK50Z is designed for high-power conversion tasks due to its enhanced specifications.
  10. Where can I find detailed specifications for the STP11NK50Z?
    Detailed specifications can be found on the official STMicroelectronics website, as well as on distributor websites like Mouser, Digi-Key, and RS Components.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:520mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1390 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP11NK50Z STP14NK50Z STP15NK50Z STP13NK50Z STP10NK50Z STP11NK40Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V 500 V 400 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 14A (Tc) 14A (Tc) 11A (Tc) 9A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 520mOhm @ 4.5A, 10V 380mOhm @ 6A, 10V 340mOhm @ 7A, 10V 480mOhm @ 6.5A, 10V 700mOhm @ 4.5A, 10V 550mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V 92 nC @ 10 V 106 nC @ 10 V 47 nC @ 10 V 39.2 nC @ 10 V 32 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1390 pF @ 25 V 2000 pF @ 25 V 2260 pF @ 25 V 1600 pF @ 25 V 1219 pF @ 25 V 930 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 125W (Tc) 150W (Tc) 160W (Tc) 140W (Tc) 125W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -50°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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