STB100NF04T4
  • Share:

STMicroelectronics STB100NF04T4

Manufacturer No:
STB100NF04T4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 120A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB100NF04T4 is an automotive-grade N-channel Power MOSFET developed by STMicroelectronics using their unique STripFET II process. This technology is designed to minimize input capacitance and gate charge, making the device highly suitable for high-efficiency applications. The MOSFET is available in D²PAK and TO-220 packages, offering robust performance and reliability. It is AEC-Q101 qualified, ensuring it meets stringent automotive standards.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 40 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25°C 120 A
Pulsed Drain Current (IDM) 480 A
Total Dissipation (PTOT) at TC = 25°C 300 W
Static Drain-Source On-Resistance (RDS(on)) 4.3 - 4.6
Gate Threshold Voltage (VGS(th)) 2 - 4 V
Operating Junction Temperature Range -55 to 175 °C
Thermal Resistance Junction-Case (Rthj-case) 0.5 °C/W
Thermal Resistance Junction-PCB (Rthj-pcb) 35 °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 62.5 °C/W

Key Features

  • AEC-Q101 qualified for automotive applications
  • Exceptional dv/dt capability
  • 100% avalanche tested
  • Low gate charge
  • STripFET II technology for minimized input capacitance and gate charge
  • Zener-protected and ideal for flyback converters and LED lighting

Applications

The STB100NF04T4 is suitable for various high-efficiency applications, including:

  • Switching applications in advanced isolated DC-DC converters
  • Telecom and computer applications requiring low gate charge driving
  • Flyback converters
  • LED lighting systems

Q & A

  1. What is the drain-source voltage rating of the STB100NF04T4?

    The drain-source voltage (VDS) rating is 40 V.

  2. What is the continuous drain current (ID) at 25°C?

    The continuous drain current (ID) at 25°C is 120 A.

  3. What is the pulsed drain current (IDM) rating?

    The pulsed drain current (IDM) rating is 480 A.

  4. What is the total dissipation (PTOT) at 25°C?

    The total dissipation (PTOT) at 25°C is 300 W.

  5. What is the static drain-source on-resistance (RDS(on))?

    The static drain-source on-resistance (RDS(on)) is typically 4.3 - 4.6 mΩ.

  6. What is the gate threshold voltage (VGS(th)) range?

    The gate threshold voltage (VGS(th)) range is 2 - 4 V.

  7. What are the operating junction temperature ranges?

    The operating junction temperature range is -55 to 175 °C.

  8. Is the STB100NF04T4 AEC-Q101 qualified?

    Yes, the STB100NF04T4 is AEC-Q101 qualified for automotive applications.

  9. What technology is used in the STB100NF04T4?

    The STB100NF04T4 uses STMicroelectronics' STripFET II technology.

  10. What are some common applications for the STB100NF04T4?

    Common applications include switching in DC-DC converters, telecom, computer systems, flyback converters, and LED lighting.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$2.20
131

Please send RFQ , we will respond immediately.

Same Series
STP10NM60ND
STP10NM60ND
MOSFET N-CH 600V 8A TO220
STD10NM60ND
STD10NM60ND
MOSFET N-CH 600V 8A DPAK
STD60NF06T4
STD60NF06T4
MOSFET N-CH 60V 60A DPAK
STD14NM50NAG
STD14NM50NAG
MOSFET N-CH 500V 12A DPAK
STB100NF04T4
STB100NF04T4
MOSFET N-CH 40V 120A D2PAK
STW74NF30
STW74NF30
MOSFET N-CH 300V 60A TO247
STW75NF30AG
STW75NF30AG
MOSFET N-CH 300V 60A TO247
STP100NF04
STP100NF04
MOSFET N-CH 40V 120A TO220AB
STP90N55F4
STP90N55F4
MOSFET N-CH 55V 90A TO220AB
STB20N60M2-EP
STB20N60M2-EP
MOSFET N-CH 600V 13A D2PAK
STD22NF06AG
STD22NF06AG
MOSFET N-CH 60V 23A DPAK
STI100N10F7
STI100N10F7
MOSFET N-CH 100V 80A I2PAK

Similar Products

Part Number STB100NF04T4 STB200NF04T4 STB190NF04T4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 50A, 10V 3.7mOhm @ 90A, 10V 4.3mOhm @ 95A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V 210 nC @ 10 V 130 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5100 pF @ 25 V 5100 pF @ 25 V 5800 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 300W (Tc) 310W (Tc) 310W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

SATAULC6-2P6
SATAULC6-2P6
STMicroelectronics
TVS DIODE 5VWM 19VC SOT666
STPSC10H12CWL
STPSC10H12CWL
STMicroelectronics
DIODE ARRAY SCHOTTKY 1200V TO247
STTH30AC06FP
STTH30AC06FP
STMicroelectronics
DIODE GEN PURP 600V 30A TO220
BD678A
BD678A
STMicroelectronics
TRANS PNP DARL 60V 4A SOT32-3
SD2931-10W
SD2931-10W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M174
STM32F078VBH6
STM32F078VBH6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 100UFBGA
TS881ILT
TS881ILT
STMicroelectronics
IC COMPARATOR R-R 1.1V SOT-23-5
DSM2190F4V-15T6
DSM2190F4V-15T6
STMicroelectronics
IC FLASH 2MBIT PARALLEL 52PQFP
VNS3NV04D-E
VNS3NV04D-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VNQ6004SA-E
VNQ6004SA-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
LD39100PU33R
LD39100PU33R
STMicroelectronics
IC REG LINEAR 3.3V 1A 6DFN
LD1085V18
LD1085V18
STMicroelectronics
IC REG LINEAR 1.8V 3A TO220AB