STB100NF04T4
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STMicroelectronics STB100NF04T4

Manufacturer No:
STB100NF04T4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 120A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB100NF04T4 is an automotive-grade N-channel Power MOSFET developed by STMicroelectronics using their unique STripFET II process. This technology is designed to minimize input capacitance and gate charge, making the device highly suitable for high-efficiency applications. The MOSFET is available in D²PAK and TO-220 packages, offering robust performance and reliability. It is AEC-Q101 qualified, ensuring it meets stringent automotive standards.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 40 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25°C 120 A
Pulsed Drain Current (IDM) 480 A
Total Dissipation (PTOT) at TC = 25°C 300 W
Static Drain-Source On-Resistance (RDS(on)) 4.3 - 4.6
Gate Threshold Voltage (VGS(th)) 2 - 4 V
Operating Junction Temperature Range -55 to 175 °C
Thermal Resistance Junction-Case (Rthj-case) 0.5 °C/W
Thermal Resistance Junction-PCB (Rthj-pcb) 35 °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 62.5 °C/W

Key Features

  • AEC-Q101 qualified for automotive applications
  • Exceptional dv/dt capability
  • 100% avalanche tested
  • Low gate charge
  • STripFET II technology for minimized input capacitance and gate charge
  • Zener-protected and ideal for flyback converters and LED lighting

Applications

The STB100NF04T4 is suitable for various high-efficiency applications, including:

  • Switching applications in advanced isolated DC-DC converters
  • Telecom and computer applications requiring low gate charge driving
  • Flyback converters
  • LED lighting systems

Q & A

  1. What is the drain-source voltage rating of the STB100NF04T4?

    The drain-source voltage (VDS) rating is 40 V.

  2. What is the continuous drain current (ID) at 25°C?

    The continuous drain current (ID) at 25°C is 120 A.

  3. What is the pulsed drain current (IDM) rating?

    The pulsed drain current (IDM) rating is 480 A.

  4. What is the total dissipation (PTOT) at 25°C?

    The total dissipation (PTOT) at 25°C is 300 W.

  5. What is the static drain-source on-resistance (RDS(on))?

    The static drain-source on-resistance (RDS(on)) is typically 4.3 - 4.6 mΩ.

  6. What is the gate threshold voltage (VGS(th)) range?

    The gate threshold voltage (VGS(th)) range is 2 - 4 V.

  7. What are the operating junction temperature ranges?

    The operating junction temperature range is -55 to 175 °C.

  8. Is the STB100NF04T4 AEC-Q101 qualified?

    Yes, the STB100NF04T4 is AEC-Q101 qualified for automotive applications.

  9. What technology is used in the STB100NF04T4?

    The STB100NF04T4 uses STMicroelectronics' STripFET II technology.

  10. What are some common applications for the STB100NF04T4?

    Common applications include switching in DC-DC converters, telecom, computer systems, flyback converters, and LED lighting.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number STB100NF04T4 STB200NF04T4 STB190NF04T4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 50A, 10V 3.7mOhm @ 90A, 10V 4.3mOhm @ 95A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V 210 nC @ 10 V 130 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5100 pF @ 25 V 5100 pF @ 25 V 5800 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 300W (Tc) 310W (Tc) 310W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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