STP100NF04
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STMicroelectronics STP100NF04

Manufacturer No:
STP100NF04
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 40V 120A TO220AB
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The STP100NF04 is a high-performance N-channel power MOSFET developed by STMicroelectronics. This device is part of the STripFET II family, which is designed to minimize input capacitance and gate charge, making it suitable for high-efficiency applications. The STP100NF04 is available in TO-220 and D²PAK packages, catering to various design requirements. It is AEC-Q101 qualified, ensuring its reliability in automotive and industrial environments.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 40 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25°C 120 A
Pulsed Drain Current (IDM) 480 A
Total Dissipation (PTOT) at TC = 25°C 300 W
Static Drain-Source On-Resistance (RDS(on)) 4.3 - 4.6
Operating Junction Temperature Range (Tj) -55 to 175 °C
Thermal Resistance Junction-Case (Rthj-case) 0.5 °C/W

Key Features

  • AEC-Q101 qualified for automotive applications.
  • Exceptional dv/dt capability.
  • 100% avalanche tested.
  • Low gate charge.
  • High current capability up to 120 A.
  • Low on-resistance (RDS(on)) of 4.3 - 4.6 mΩ.
  • Suitable for high-efficiency isolated DC-DC converters and applications with low gate charge driving requirements.

Applications

  • Switching applications in telecom and computer systems.
  • Advanced high-efficiency isolated DC-DC converters.
  • Automotive and industrial power management systems.
  • Applications requiring low gate charge and high current handling.

Q & A

  1. What is the maximum drain-source voltage of the STP100NF04?

    The maximum drain-source voltage (VDS) is 40 V.

  2. What are the package options for the STP100NF04?

    The STP100NF04 is available in TO-220 and D²PAK packages.

  3. What is the continuous drain current rating of the STP100NF04 at 25°C?

    The continuous drain current (ID) at 25°C is 120 A.

  4. Is the STP100NF04 AEC-Q101 qualified?

    Yes, the STP100NF04 is AEC-Q101 qualified for automotive applications.

  5. What is the typical on-resistance (RDS(on)) of the STP100NF04?

    The typical on-resistance (RDS(on)) is 4.3 - 4.6 mΩ.

  6. What is the maximum total dissipation (PTOT) at 25°C?

    The maximum total dissipation (PTOT) at 25°C is 300 W.

  7. What is the operating junction temperature range of the STP100NF04?

    The operating junction temperature range is -55 to 175 °C.

  8. What are some typical applications of the STP100NF04?

    Typical applications include switching in telecom and computer systems, high-efficiency isolated DC-DC converters, and automotive and industrial power management systems.

  9. Does the STP100NF04 have low gate charge?

    Yes, the STP100NF04 has low gate charge, making it suitable for applications with low gate charge driving requirements.

  10. What is the thermal resistance junction-case (Rthj-case) of the STP100NF04?

    The thermal resistance junction-case (Rthj-case) is 0.5 °C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP100NF04 STP150NF04 STP120NF04
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 80A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 50A, 10V 7mOhm @ 40A, 10V 5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V 150 nC @ 10 V 150 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5100 pF @ 25 V 3650 pF @ 25 V 5100 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 300W (Tc) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

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