STP100NF04
  • Share:

STMicroelectronics STP100NF04

Manufacturer No:
STP100NF04
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 40V 120A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP100NF04 is a high-performance N-channel power MOSFET developed by STMicroelectronics. This device is part of the STripFET II family, which is designed to minimize input capacitance and gate charge, making it suitable for high-efficiency applications. The STP100NF04 is available in TO-220 and D²PAK packages, catering to various design requirements. It is AEC-Q101 qualified, ensuring its reliability in automotive and industrial environments.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 40 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25°C 120 A
Pulsed Drain Current (IDM) 480 A
Total Dissipation (PTOT) at TC = 25°C 300 W
Static Drain-Source On-Resistance (RDS(on)) 4.3 - 4.6 mΩ
Operating Junction Temperature Range (Tj) -55 to 175 °C
Thermal Resistance Junction-Case (Rthj-case) 0.5 °C/W

Key Features

  • AEC-Q101 qualified for automotive applications.
  • Exceptional dv/dt capability.
  • 100% avalanche tested.
  • Low gate charge.
  • High current capability up to 120 A.
  • Low on-resistance (RDS(on)) of 4.3 - 4.6 mΩ.
  • Suitable for high-efficiency isolated DC-DC converters and applications with low gate charge driving requirements.

Applications

  • Switching applications in telecom and computer systems.
  • Advanced high-efficiency isolated DC-DC converters.
  • Automotive and industrial power management systems.
  • Applications requiring low gate charge and high current handling.

Q & A

  1. What is the maximum drain-source voltage of the STP100NF04?

    The maximum drain-source voltage (VDS) is 40 V.

  2. What are the package options for the STP100NF04?

    The STP100NF04 is available in TO-220 and D²PAK packages.

  3. What is the continuous drain current rating of the STP100NF04 at 25°C?

    The continuous drain current (ID) at 25°C is 120 A.

  4. Is the STP100NF04 AEC-Q101 qualified?

    Yes, the STP100NF04 is AEC-Q101 qualified for automotive applications.

  5. What is the typical on-resistance (RDS(on)) of the STP100NF04?

    The typical on-resistance (RDS(on)) is 4.3 - 4.6 mΩ.

  6. What is the maximum total dissipation (PTOT) at 25°C?

    The maximum total dissipation (PTOT) at 25°C is 300 W.

  7. What is the operating junction temperature range of the STP100NF04?

    The operating junction temperature range is -55 to 175 °C.

  8. What are some typical applications of the STP100NF04?

    Typical applications include switching in telecom and computer systems, high-efficiency isolated DC-DC converters, and automotive and industrial power management systems.

  9. Does the STP100NF04 have low gate charge?

    Yes, the STP100NF04 has low gate charge, making it suitable for applications with low gate charge driving requirements.

  10. What is the thermal resistance junction-case (Rthj-case) of the STP100NF04?

    The thermal resistance junction-case (Rthj-case) is 0.5 °C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
325

Please send RFQ , we will respond immediately.

Same Series
STP10NM60ND
STP10NM60ND
MOSFET N-CH 600V 8A TO220
STD60NF06T4
STD60NF06T4
MOSFET N-CH 60V 60A DPAK
STD14NM50NAG
STD14NM50NAG
MOSFET N-CH 500V 12A DPAK
STD30NF06LAG
STD30NF06LAG
MOSFET N-CH 60V 28A DPAK
STB100NF04T4
STB100NF04T4
MOSFET N-CH 40V 120A D2PAK
STW74NF30
STW74NF30
MOSFET N-CH 300V 60A TO247
STW75NF30AG
STW75NF30AG
MOSFET N-CH 300V 60A TO247
STP100NF04
STP100NF04
MOSFET N-CH 40V 120A TO220AB
STP90N55F4
STP90N55F4
MOSFET N-CH 55V 90A TO220AB
STB20N60M2-EP
STB20N60M2-EP
MOSFET N-CH 600V 13A D2PAK
STD22NF06AG
STD22NF06AG
MOSFET N-CH 60V 23A DPAK
STI100N10F7
STI100N10F7
MOSFET N-CH 100V 80A I2PAK

Similar Products

Part Number STP100NF04 STP150NF04 STP120NF04
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 80A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 50A, 10V 7mOhm @ 40A, 10V 5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V 150 nC @ 10 V 150 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5100 pF @ 25 V 3650 pF @ 25 V 5100 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 300W (Tc) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

SCTWA30N120
SCTWA30N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220

Related Product By Brand

STPS30H100CT
STPS30H100CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 100V TO220
STTH30AC06FP
STTH30AC06FP
STMicroelectronics
DIODE GEN PURP 600V 30A TO220
STD10NF10T4
STD10NF10T4
STMicroelectronics
MOSFET N-CH 100V 13A DPAK
STH15NB50FI
STH15NB50FI
STMicroelectronics
MOSFET N-CH 500V 10.5A ISOWAT218
STM32L011F3P6TR
STM32L011F3P6TR
STMicroelectronics
IC MCU 32BIT 8KB FLASH 20TSSOP
SPC58EC70E1F0C0X
SPC58EC70E1F0C0X
STMicroelectronics
IC MCU 32BIT 2MB FLASH 64ETQFP
LM2904WHYDT
LM2904WHYDT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8SOIC
TSC2012IDT
TSC2012IDT
STMicroelectronics
IC CURRENT SENSE 1 CIRCUIT 8SOIC
M95160-DRMN3TP/K
M95160-DRMN3TP/K
STMicroelectronics
IC EEPROM 16KBIT SPI 20MHZ 8SO
VND7140AJ12TR-E
VND7140AJ12TR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO12
L9779WDM
L9779WDM
STMicroelectronics
HI-QUAD 64 14X14 POW
L5050STR
L5050STR
STMicroelectronics
IC REG LINEAR 5V 50MA 8SO