Overview
The STW18NM60N is a high-performance N-channel Power MOSFET manufactured by STMicroelectronics. This device is part of the MDmesh™ II technology, known for its low on-resistance and gate charge. The STW18NM60N is designed to provide high efficiency and reliability in various power management applications. It features a vertical structure combined with STMicroelectronics' strip layout, making it one of the leading components in its class for low on-resistance and gate charge.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 600 V |
| ID (Drain Current) | 13 A (Tc) |
| RDS(on) (On-Resistance) | 0.26 Ω (typ.) |
| PD (Power Dissipation) | 110 W (Tc) |
| Package | TO-247-3 (Through Hole) |
Key Features
- Low on-resistance (RDS(on)) of 0.26 Ω (typ.) for high efficiency
- Low gate charge for reduced switching losses
- High drain current capability of 13 A (Tc)
- High voltage rating of 600 V for robust operation in various applications
- MDmesh™ II technology for enhanced performance and reliability
Applications
The STW18NM60N is suitable for a wide range of power management applications, including but not limited to:
- Switch-mode power supplies (SMPS)
- DC-DC converters
- Motor control and drives
- Power factor correction (PFC) circuits
- High-voltage industrial and consumer electronics
Q & A
- What is the maximum drain-source voltage of the STW18NM60N?
The maximum drain-source voltage (VDS) is 600 V. - What is the typical on-resistance of the STW18NM60N?
The typical on-resistance (RDS(on)) is 0.26 Ω. - What is the maximum drain current of the STW18NM60N?
The maximum drain current (ID) is 13 A (Tc). - What package type is the STW18NM60N available in?
The STW18NM60N is available in the TO-247-3 (Through Hole) package. - What technology does the STW18NM60N use?
The STW18NM60N uses MDmesh™ II technology. - What are some common applications for the STW18NM60N?
Common applications include switch-mode power supplies, DC-DC converters, motor control, and power factor correction circuits. - What is the power dissipation capability of the STW18NM60N?
The power dissipation capability is 110 W (Tc). - Where can I find detailed specifications for the STW18NM60N?
Detailed specifications can be found on the official STMicroelectronics website, as well as on distributor websites like Digi-Key and Mouser. - Is the STW18NM60N suitable for high-voltage applications?
Yes, the STW18NM60N is designed for high-voltage applications with a rating of 600 V. - What are the benefits of using the MDmesh™ II technology in the STW18NM60N?
The MDmesh™ II technology provides low on-resistance and gate charge, enhancing efficiency and reducing switching losses.
