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STW18NM60N
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STMicroelectronics STW18NM60N

Manufacturer No:
STW18NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 13A TO247-3
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Product Introduction

Overview

The STW18NM60N is a high-performance N-channel Power MOSFET manufactured by STMicroelectronics. This device is part of the MDmesh™ II technology, known for its low on-resistance and gate charge. The STW18NM60N is designed to provide high efficiency and reliability in various power management applications. It features a vertical structure combined with STMicroelectronics' strip layout, making it one of the leading components in its class for low on-resistance and gate charge.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
ID (Drain Current)13 A (Tc)
RDS(on) (On-Resistance)0.26 Ω (typ.)
PD (Power Dissipation)110 W (Tc)
PackageTO-247-3 (Through Hole)

Key Features

  • Low on-resistance (RDS(on)) of 0.26 Ω (typ.) for high efficiency
  • Low gate charge for reduced switching losses
  • High drain current capability of 13 A (Tc)
  • High voltage rating of 600 V for robust operation in various applications
  • MDmesh™ II technology for enhanced performance and reliability

Applications

The STW18NM60N is suitable for a wide range of power management applications, including but not limited to:

  • Switch-mode power supplies (SMPS)
  • DC-DC converters
  • Motor control and drives
  • Power factor correction (PFC) circuits
  • High-voltage industrial and consumer electronics

Q & A

  1. What is the maximum drain-source voltage of the STW18NM60N?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the typical on-resistance of the STW18NM60N?
    The typical on-resistance (RDS(on)) is 0.26 Ω.
  3. What is the maximum drain current of the STW18NM60N?
    The maximum drain current (ID) is 13 A (Tc).
  4. What package type is the STW18NM60N available in?
    The STW18NM60N is available in the TO-247-3 (Through Hole) package.
  5. What technology does the STW18NM60N use?
    The STW18NM60N uses MDmesh™ II technology.
  6. What are some common applications for the STW18NM60N?
    Common applications include switch-mode power supplies, DC-DC converters, motor control, and power factor correction circuits.
  7. What is the power dissipation capability of the STW18NM60N?
    The power dissipation capability is 110 W (Tc).
  8. Where can I find detailed specifications for the STW18NM60N?
    Detailed specifications can be found on the official STMicroelectronics website, as well as on distributor websites like Digi-Key and Mouser.
  9. Is the STW18NM60N suitable for high-voltage applications?
    Yes, the STW18NM60N is designed for high-voltage applications with a rating of 600 V.
  10. What are the benefits of using the MDmesh™ II technology in the STW18NM60N?
    The MDmesh™ II technology provides low on-resistance and gate charge, enhancing efficiency and reducing switching losses.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:285mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW18NM60N STW18NM60ND STW19NM60N STW12NM60N STW13NM60N STW15NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 13A (Tc) 13A (Tc) 10A (Tc) 11A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 285mOhm @ 6.5A, 10V 290mOhm @ 6.5A, 10V 285mOhm @ 6.5A, 10V 410mOhm @ 5A, 10V 360mOhm @ 5.5A, 10V 299mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 34 nC @ 10 V 35 nC @ 10 V 30.5 nC @ 10 V 30 nC @ 10 V 37 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 50 V 1030 pF @ 50 V 1000 pF @ 50 V 960 pF @ 50 V 790 pF @ 50 V 1250 pF @ 50 V
FET Feature - - - - - -
Power Dissipation (Max) 110W (Tc) 110W (Tc) 110W (Tc) 90W (Tc) 90W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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