STMicroelectronics STW18NM60N

Manufacturer No:: STW18NM60N
Manufacturer:: STMicroelectronics
Package:: Tube
Description:: MOSFET N-CH 600V 13A TO247-3
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Product Introduction

Overview

The STW18NM60N is a high-performance N-channel Power MOSFET manufactured by STMicroelectronics. This device is part of the MDmesh™ II technology, known for its low on-resistance and gate charge. The STW18NM60N is designed to provide high efficiency and reliability in various power management applications. It features a vertical structure combined with STMicroelectronics' strip layout, making it one of the leading components in its class for low on-resistance and gate charge.

Key Specifications

Parameter	Value
V_DS (Drain-Source Voltage)	600 V
I_D (Drain Current)	13 A (T_c)
R_DS(on) (On-Resistance)	0.26 Ω (typ.)
P_D (Power Dissipation)	110 W (T_c)
Package	TO-247-3 (Through Hole)

Key Features

Low on-resistance (R_DS(on)) of 0.26 Ω (typ.) for high efficiency
Low gate charge for reduced switching losses
High drain current capability of 13 A (T_c)
High voltage rating of 600 V for robust operation in various applications
MDmesh™ II technology for enhanced performance and reliability

Applications

The STW18NM60N is suitable for a wide range of power management applications, including but not limited to:

Switch-mode power supplies (SMPS)
DC-DC converters
Motor control and drives
Power factor correction (PFC) circuits
High-voltage industrial and consumer electronics

Q & A

What is the maximum drain-source voltage of the STW18NM60N?
The maximum drain-source voltage (V_DS) is 600 V.
What is the typical on-resistance of the STW18NM60N?
The typical on-resistance (R_DS(on)) is 0.26 Ω.
What is the maximum drain current of the STW18NM60N?
The maximum drain current (I_D) is 13 A (T_c).
What package type is the STW18NM60N available in?
The STW18NM60N is available in the TO-247-3 (Through Hole) package.
What technology does the STW18NM60N use?
The STW18NM60N uses MDmesh™ II technology.
What are some common applications for the STW18NM60N?
Common applications include switch-mode power supplies, DC-DC converters, motor control, and power factor correction circuits.
What is the power dissipation capability of the STW18NM60N?
The power dissipation capability is 110 W (T_c).
Where can I find detailed specifications for the STW18NM60N?
Detailed specifications can be found on the official STMicroelectronics website, as well as on distributor websites like Digi-Key and Mouser.
Is the STW18NM60N suitable for high-voltage applications?
Yes, the STW18NM60N is designed for high-voltage applications with a rating of 600 V.
What are the benefits of using the MDmesh™ II technology in the STW18NM60N?
The MDmesh™ II technology provides low on-resistance and gate charge, enhancing efficiency and reducing switching losses.

In Stock

UnitPrice: $4.49

Quantity: 198

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Same Series

Part Number	STW18NM60N	STW18NM60ND	STW19NM60N	STW12NM60N	STW13NM60N	STW15NM60N
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Status	Active	Obsolete	Active	Obsolete	Obsolete	Obsolete
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V	600 V	600 V	600 V	600 V	600 V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)	13A (Tc)	13A (Tc)	10A (Tc)	11A (Tc)	14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	285mOhm @ 6.5A, 10V	290mOhm @ 6.5A, 10V	285mOhm @ 6.5A, 10V	410mOhm @ 5A, 10V	360mOhm @ 5.5A, 10V	299mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	5V @ 250µA	4V @ 250µA	4V @ 250µA	4V @ 250µA	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V	34 nC @ 10 V	35 nC @ 10 V	30.5 nC @ 10 V	30 nC @ 10 V	37 nC @ 10 V
Vgs (Max)	±25V	±25V	±25V	±25V	±25V	±25V
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 50 V	1030 pF @ 50 V	1000 pF @ 50 V	960 pF @ 50 V	790 pF @ 50 V	1250 pF @ 50 V
FET Feature	-	-	-	-	-	-
Power Dissipation (Max)	110W (Tc)	110W (Tc)	110W (Tc)	90W (Tc)	90W (Tc)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Supplier Device Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	285mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	35 nC @ 10 V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	1000 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	110W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247-3
Package / Case:	TO-247-3

STMicroelectronics STW18NM60N

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

In Stock

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