STMicroelectronics STW19NM60N

Manufacturer No:: STW19NM60N
Manufacturer:: STMicroelectronics
Package:: Tube
Description:: MOSFET N-CH 600V 13A TO247
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Product Introduction

Overview

The STW19NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is specifically designed for automotive applications and is AEC-Q101 qualified, ensuring high reliability and performance in demanding environments. It features low input capacitance and gate charge, as well as low gate input resistance, making it suitable for a variety of power management and control applications.

Key Specifications

Parameter	Value	Unit
V_DS (Drain-Source Voltage)	600	V
V_GS (Gate-Source Voltage)	±20	V
I_D (Continuous Drain Current)	13	A
R_DS(on) (On-State Drain-Source Resistance)	0.26	Ω
C_iss (Input Capacitance)	Low	pF
Q_g (Total Gate Charge)	Low	nC
Package	TO-247	-

Key Features

AEC-Q101 qualified for automotive applications.
100% avalanche tested for enhanced reliability.
Low input capacitance and gate charge for efficient switching.
Low gate input resistance for better control.
MDmesh™ II technology for improved performance and efficiency.

Applications

Automotive systems, including power management and control circuits.
Power supplies and DC-DC converters.
Motor control and drive systems.
High-frequency switching applications.

Q & A

What is the maximum drain-source voltage of the STW19NM60N?
The maximum drain-source voltage (V_DS) is 600 V.
What is the continuous drain current rating of the STW19NM60N?
The continuous drain current (I_D) is 13 A.
What is the on-state drain-source resistance of the STW19NM60N?
The on-state drain-source resistance (R_DS(on)) is 0.26 Ω.
Is the STW19NM60N suitable for automotive applications?
Yes, it is AEC-Q101 qualified for automotive applications.
What technology is used in the STW19NM60N?
The STW19NM60N uses the second generation of MDmesh™ technology.
What are the key benefits of the low input capacitance and gate charge?
The low input capacitance and gate charge improve the efficiency and speed of switching operations.
What is the package type of the STW19NM60N?
The package type is TO-247.
Is the STW19NM60N 100% avalanche tested?
Yes, it is 100% avalanche tested for enhanced reliability.
What are some common applications of the STW19NM60N?
Common applications include automotive systems, power supplies, motor control, and high-frequency switching applications.
What is the significance of AEC-Q101 qualification?
AEC-Q101 qualification ensures that the device meets the stringent requirements for reliability and performance in automotive applications.

In Stock

UnitPrice: $2.28

Quantity: 19

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Part Number	STW19NM60N	STW19NM65N	STW12NM60N	STW13NM60N	STW15NM60N	STW18NM60N	STW19NM50N
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Status	Active	Obsolete	Obsolete	Obsolete	Obsolete	Active	Active
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V	650 V	600 V	600 V	600 V	600 V	500 V
Current - Continuous Drain (Id) @ 25°C	13A (Tc)	15.5A (Tc)	10A (Tc)	11A (Tc)	14A (Tc)	13A (Tc)	14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	285mOhm @ 6.5A, 10V	270mOhm @ 7.75A, 10V	410mOhm @ 5A, 10V	360mOhm @ 5.5A, 10V	299mOhm @ 7A, 10V	285mOhm @ 6.5A, 10V	250mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	4V @ 250µA	4V @ 250µA	4V @ 250µA	4V @ 250µA	4V @ 250µA	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V	55 nC @ 10 V	30.5 nC @ 10 V	30 nC @ 10 V	37 nC @ 10 V	35 nC @ 10 V	34 nC @ 10 V
Vgs (Max)	±25V	±25V	±25V	±25V	±25V	±25V	±25V
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 50 V	1900 pF @ 50 V	960 pF @ 50 V	790 pF @ 50 V	1250 pF @ 50 V	1000 pF @ 50 V	1000 pF @ 50 V
FET Feature	-	-	-	-	-	-	-
Power Dissipation (Max)	110W (Tc)	150W (Tc)	90W (Tc)	90W (Tc)	125W (Tc)	110W (Tc)	110W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Supplier Device Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	285mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	35 nC @ 10 V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	1000 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	110W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247-3
Package / Case:	TO-247-3

STMicroelectronics STW19NM60N

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

In Stock

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