STW19NM60N
  • Share:

STMicroelectronics STW19NM60N

Manufacturer No:
STW19NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 13A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW19NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is specifically designed for automotive applications and is AEC-Q101 qualified, ensuring high reliability and performance in demanding environments. It features low input capacitance and gate charge, as well as low gate input resistance, making it suitable for a variety of power management and control applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
VGS (Gate-Source Voltage) ±20 V
ID (Continuous Drain Current) 13 A
RDS(on) (On-State Drain-Source Resistance) 0.26 Ω
Ciss (Input Capacitance) Low pF
Qg (Total Gate Charge) Low nC
Package TO-247 -

Key Features

  • AEC-Q101 qualified for automotive applications.
  • 100% avalanche tested for enhanced reliability.
  • Low input capacitance and gate charge for efficient switching.
  • Low gate input resistance for better control.
  • MDmesh™ II technology for improved performance and efficiency.

Applications

  • Automotive systems, including power management and control circuits.
  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching applications.

Q & A

  1. What is the maximum drain-source voltage of the STW19NM60N?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the continuous drain current rating of the STW19NM60N?

    The continuous drain current (ID) is 13 A.

  3. What is the on-state drain-source resistance of the STW19NM60N?

    The on-state drain-source resistance (RDS(on)) is 0.26 Ω.

  4. Is the STW19NM60N suitable for automotive applications?

    Yes, it is AEC-Q101 qualified for automotive applications.

  5. What technology is used in the STW19NM60N?

    The STW19NM60N uses the second generation of MDmesh™ technology.

  6. What are the key benefits of the low input capacitance and gate charge?

    The low input capacitance and gate charge improve the efficiency and speed of switching operations.

  7. What is the package type of the STW19NM60N?

    The package type is TO-247.

  8. Is the STW19NM60N 100% avalanche tested?

    Yes, it is 100% avalanche tested for enhanced reliability.

  9. What are some common applications of the STW19NM60N?

    Common applications include automotive systems, power supplies, motor control, and high-frequency switching applications.

  10. What is the significance of AEC-Q101 qualification?

    AEC-Q101 qualification ensures that the device meets the stringent requirements for reliability and performance in automotive applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:285mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$2.28
19

Please send RFQ , we will respond immediately.

Similar Products

Part Number STW19NM60N STW19NM65N STW12NM60N STW13NM60N STW15NM60N STW18NM60N STW19NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete Obsolete Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 15.5A (Tc) 10A (Tc) 11A (Tc) 14A (Tc) 13A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 285mOhm @ 6.5A, 10V 270mOhm @ 7.75A, 10V 410mOhm @ 5A, 10V 360mOhm @ 5.5A, 10V 299mOhm @ 7A, 10V 285mOhm @ 6.5A, 10V 250mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 55 nC @ 10 V 30.5 nC @ 10 V 30 nC @ 10 V 37 nC @ 10 V 35 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 50 V 1900 pF @ 50 V 960 pF @ 50 V 790 pF @ 50 V 1250 pF @ 50 V 1000 pF @ 50 V 1000 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 110W (Tc) 150W (Tc) 90W (Tc) 90W (Tc) 125W (Tc) 110W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
FQA70N10
FQA70N10
onsemi
MOSFET N-CH 100V 70A TO3PN
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

STTH30L06G-TR
STTH30L06G-TR
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
BTA08-600CWRG
BTA08-600CWRG
STMicroelectronics
TRIAC ALTERNISTOR 600V TO220AB
STD10NF10T4
STD10NF10T4
STMicroelectronics
MOSFET N-CH 100V 13A DPAK
STM32L412CBU6
STM32L412CBU6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 48UFQFPN
STM32F207ZET6TR
STM32F207ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32F207VET6
STM32F207VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM8AF6246TDSSSX
STM8AF6246TDSSSX
STMicroelectronics
IC MCU 8BIT 16KB FLASH 32LQFP
M68AW512ML70ND6
M68AW512ML70ND6
STMicroelectronics
IC SRAM 8MBIT PARALLEL 44TSOP II
L6235PD
L6235PD
STMicroelectronics
IC MOTOR DRVR 12V-52V 36POWERSO
VNS3NV04D-E
VNS3NV04D-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
L7809ABV
L7809ABV
STMicroelectronics
IC REG LINEAR 9V 1.5A TO220AB
BALF-SPI-02D3
BALF-SPI-02D3
STMicroelectronics
BALUN 434MHZ 6WFBGA FCBGA