STW19NM60N
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STMicroelectronics STW19NM60N

Manufacturer No:
STW19NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 13A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW19NM60N is an N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is specifically designed for automotive applications and is AEC-Q101 qualified, ensuring high reliability and performance in demanding environments. It features low input capacitance and gate charge, as well as low gate input resistance, making it suitable for a variety of power management and control applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
VGS (Gate-Source Voltage) ±20 V
ID (Continuous Drain Current) 13 A
RDS(on) (On-State Drain-Source Resistance) 0.26 Ω
Ciss (Input Capacitance) Low pF
Qg (Total Gate Charge) Low nC
Package TO-247 -

Key Features

  • AEC-Q101 qualified for automotive applications.
  • 100% avalanche tested for enhanced reliability.
  • Low input capacitance and gate charge for efficient switching.
  • Low gate input resistance for better control.
  • MDmesh™ II technology for improved performance and efficiency.

Applications

  • Automotive systems, including power management and control circuits.
  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching applications.

Q & A

  1. What is the maximum drain-source voltage of the STW19NM60N?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the continuous drain current rating of the STW19NM60N?

    The continuous drain current (ID) is 13 A.

  3. What is the on-state drain-source resistance of the STW19NM60N?

    The on-state drain-source resistance (RDS(on)) is 0.26 Ω.

  4. Is the STW19NM60N suitable for automotive applications?

    Yes, it is AEC-Q101 qualified for automotive applications.

  5. What technology is used in the STW19NM60N?

    The STW19NM60N uses the second generation of MDmesh™ technology.

  6. What are the key benefits of the low input capacitance and gate charge?

    The low input capacitance and gate charge improve the efficiency and speed of switching operations.

  7. What is the package type of the STW19NM60N?

    The package type is TO-247.

  8. Is the STW19NM60N 100% avalanche tested?

    Yes, it is 100% avalanche tested for enhanced reliability.

  9. What are some common applications of the STW19NM60N?

    Common applications include automotive systems, power supplies, motor control, and high-frequency switching applications.

  10. What is the significance of AEC-Q101 qualification?

    AEC-Q101 qualification ensures that the device meets the stringent requirements for reliability and performance in automotive applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:285mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW19NM60N STW19NM65N STW12NM60N STW13NM60N STW15NM60N STW18NM60N STW19NM50N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Obsolete Obsolete Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 15.5A (Tc) 10A (Tc) 11A (Tc) 14A (Tc) 13A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 285mOhm @ 6.5A, 10V 270mOhm @ 7.75A, 10V 410mOhm @ 5A, 10V 360mOhm @ 5.5A, 10V 299mOhm @ 7A, 10V 285mOhm @ 6.5A, 10V 250mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 55 nC @ 10 V 30.5 nC @ 10 V 30 nC @ 10 V 37 nC @ 10 V 35 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 50 V 1900 pF @ 50 V 960 pF @ 50 V 790 pF @ 50 V 1250 pF @ 50 V 1000 pF @ 50 V 1000 pF @ 50 V
FET Feature - - - - - - -
Power Dissipation (Max) 110W (Tc) 150W (Tc) 90W (Tc) 90W (Tc) 125W (Tc) 110W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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