STW68N60M6-4
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STMicroelectronics STW68N60M6-4

Manufacturer No:
STW68N60M6-4
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 63A TO247-4
Delivery:
Payment:
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Product Introduction

Overview

The STW68N60M6-4 is an N-channel power MOSFET developed by STMicroelectronics, utilizing the advanced MDmesh™ M6 technology. This device is part of the well-established MDmesh family of Super Junction (SJ) MOSFETs, known for their high performance and efficiency. The M6 technology enhances the previous generation by offering improved RDS(on) per area, reduced switching losses, and excellent switching behavior. This makes the STW68N60M6-4 ideal for applications requiring high power handling and efficient operation.

Key Specifications

Parameter Value Unit
Order Code STW68N60M6-4
VDS (Drain-Source Voltage) 600 V
RDS(on) max. (On-Resistance) 41 mΩ mΩ
ID (Drain Current) at TC = 25 °C 63 A A
ID (Drain Current) at TC = 100 °C 40 A A
IDM (Pulsed Drain Current) 252 A A
PTOT (Total Power Dissipation) at TC = 25 °C 390 W W
VGS (Gate-Source Voltage) ±25 V V
Tstg (Storage Temperature Range) -55 to 150 °C °C
Tj (Operating Junction Temperature Range) -55 to 150 °C °C
Package TO247-4

Key Features

  • Reduced switching losses
  • Lower RDS(on) per area compared to previous generations
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected
  • Excellent switching performance thanks to the extra driving source pin

Applications

  • Switching applications
  • LLC converters
  • Boost PFC converters

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STW68N60M6-4?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-resistance (RDS(on)) of the STW68N60M6-4?

    The typical on-resistance (RDS(on)) is 35 mΩ.

  3. What is the maximum continuous drain current (ID) at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 63 A.

  4. What is the package type of the STW68N60M6-4?

    The package type is TO247-4.

  5. What are the key features of the MDmesh™ M6 technology?

    The key features include reduced switching losses, lower RDS(on) per area, low gate input resistance, 100% avalanche tested, Zener-protected, and excellent switching performance.

  6. What are the typical applications of the STW68N60M6-4?

    The typical applications include switching applications, LLC converters, and Boost PFC converters.

  7. What is the thermal resistance junction-case (Rthj-case) of the STW68N60M6-4?

    The thermal resistance junction-case (Rthj-case) is 0.32 °C/W.

  8. What is the total power dissipation (PTOT) at 25 °C?

    The total power dissipation (PTOT) at 25 °C is 390 W.

  9. Is the STW68N60M6-4 RoHS compliant?

    Yes, the STW68N60M6-4 is RoHS compliant and comes in Ecopack2 packages.

  10. What is the storage temperature range of the STW68N60M6-4?

    The storage temperature range is -55 to 150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:63A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:41mOhm @ 31.5A, 10V
Vgs(th) (Max) @ Id:4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:106 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:4360 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):390W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-4
Package / Case:TO-247-4
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Similar Products

Part Number STW68N60M6-4 STW48N60M6-4
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 63A (Tc) 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 31.5A, 10V 69mOhm @ 19.5A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 10 V 57 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 4360 pF @ 100 V 2578 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 390W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-4 TO-247-4
Package / Case TO-247-4 TO-247-4

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