STW48N60M2-4
  • Share:

STMicroelectronics STW48N60M2-4

Manufacturer No:
STW48N60M2-4
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 42A TO247-4L
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW48N60M2-4 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is characterized by its strip layout and improved vertical structure, which result in low on-resistance and optimized switching characteristics. These features make it highly suitable for high-efficiency converters in demanding applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
RDS(on) (On-Resistance) 60 mΩ (typ.)
ID (Drain Current) 42 A A
VGS(th) (Threshold Voltage) 2-4 V V
Package TO247-4
Operating Temperature Range -55 to 150 °C °C
RoHS Compliance Ecopack2

Key Features

  • Excellent switching performance thanks to the extra driving source pin
  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected

Applications

The STW48N60M2-4 is suitable for a variety of high-efficiency converter applications, including but not limited to:

  • Switch-Mode Power Supplies (SMPS)
  • Data centers
  • Solar microinverters
  • Industrial power conversion

Q & A

  1. What is the typical on-resistance of the STW48N60M2-4?

    The typical on-resistance (RDS(on)) is 60 mΩ.

  2. What is the maximum drain current of the STW48N60M2-4?

    The maximum drain current (ID) is 42 A.

  3. What is the package type of the STW48N60M2-4?

    The package type is TO247-4.

  4. Is the STW48N60M2-4 RoHS compliant?
  5. What are the key features of the STW48N60M2-4?

    The key features include excellent switching performance, extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, and Zener-protected.

  6. What are the typical applications of the STW48N60M2-4?

    Typical applications include SMPS, data centers, solar microinverters, and industrial power conversion.

  7. What is the operating temperature range of the STW48N60M2-4?

    The operating temperature range is -55 to 150 °C.

  8. Is the STW48N60M2-4 available for immediate purchase?
  9. What kind of protection does the STW48N60M2-4 have?

    The STW48N60M2-4 is Zener-protected and 100% avalanche tested.

  10. Can I download EDA symbols and 3D models for the STW48N60M2-4?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:70mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:3060 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-4
Package / Case:TO-247-4
0 Remaining View Similar

In Stock

$8.75
106

Please send RFQ , we will respond immediately.

Similar Products

Part Number STW48N60M2-4 STW48N60M6-4 STW40N60M2-4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc) 39A (Tc) 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 21A, 10V 69mOhm @ 19.5A, 10V 88mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4.75V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 57 nC @ 10 V 57 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 3060 pF @ 100 V 2578 pF @ 100 V 2500 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 300W (Tc) 250W (Tc) 250W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247-4 TO-247-4 TO-247-3
Package / Case TO-247-4 TO-247-4 TO-247-3

Related Product By Categories

STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
BSS138K-7
BSS138K-7
Diodes Incorporated
MOSFET N-CH 50V SOT23 T&R 3K
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB

Related Product By Brand

BAT54JFILM
BAT54JFILM
STMicroelectronics
DIODE SCHOTTKY 40V 300MA SOD323
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
STP24N60M2
STP24N60M2
STMicroelectronics
MOSFET N-CH 600V 18A TO220
STGP30H60DFB
STGP30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
STM32F407ZET7
STM32F407ZET7
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
TS339IPT
TS339IPT
STMicroelectronics
IC COMP MICROPWR QUAD V 14 TSSOP
M24512-DRDW3TP/K
M24512-DRDW3TP/K
STMicroelectronics
IC EEPROM 512KBIT I2C 8TSSOP
M24C32-DRMN3TP/K
M24C32-DRMN3TP/K
STMicroelectronics
IC EEPROM 32KBIT I2C 1MHZ 8SO
VNS3NV04D-E
VNS3NV04D-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VNS3NV04-E
VNS3NV04-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
BALF-SPI-02D3
BALF-SPI-02D3
STMicroelectronics
BALUN 434MHZ 6WFBGA FCBGA
TDA7708LX32
TDA7708LX32
STMicroelectronics
ADD INFOTAINMENT