STW48N60M2-4
  • Share:

STMicroelectronics STW48N60M2-4

Manufacturer No:
STW48N60M2-4
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 42A TO247-4L
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW48N60M2-4 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is characterized by its strip layout and improved vertical structure, which result in low on-resistance and optimized switching characteristics. These features make it highly suitable for high-efficiency converters in demanding applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 600 V
RDS(on) (On-Resistance) 60 mΩ (typ.)
ID (Drain Current) 42 A A
VGS(th) (Threshold Voltage) 2-4 V V
Package TO247-4
Operating Temperature Range -55 to 150 °C °C
RoHS Compliance Ecopack2

Key Features

  • Excellent switching performance thanks to the extra driving source pin
  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected

Applications

The STW48N60M2-4 is suitable for a variety of high-efficiency converter applications, including but not limited to:

  • Switch-Mode Power Supplies (SMPS)
  • Data centers
  • Solar microinverters
  • Industrial power conversion

Q & A

  1. What is the typical on-resistance of the STW48N60M2-4?

    The typical on-resistance (RDS(on)) is 60 mΩ.

  2. What is the maximum drain current of the STW48N60M2-4?

    The maximum drain current (ID) is 42 A.

  3. What is the package type of the STW48N60M2-4?

    The package type is TO247-4.

  4. Is the STW48N60M2-4 RoHS compliant?
  5. What are the key features of the STW48N60M2-4?

    The key features include excellent switching performance, extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, and Zener-protected.

  6. What are the typical applications of the STW48N60M2-4?

    Typical applications include SMPS, data centers, solar microinverters, and industrial power conversion.

  7. What is the operating temperature range of the STW48N60M2-4?

    The operating temperature range is -55 to 150 °C.

  8. Is the STW48N60M2-4 available for immediate purchase?
  9. What kind of protection does the STW48N60M2-4 have?

    The STW48N60M2-4 is Zener-protected and 100% avalanche tested.

  10. Can I download EDA symbols and 3D models for the STW48N60M2-4?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:70mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:3060 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-4
Package / Case:TO-247-4
0 Remaining View Similar

In Stock

$8.75
106

Please send RFQ , we will respond immediately.

Similar Products

Part Number STW48N60M2-4 STW48N60M6-4 STW40N60M2-4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc) 39A (Tc) 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 21A, 10V 69mOhm @ 19.5A, 10V 88mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4.75V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 57 nC @ 10 V 57 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 3060 pF @ 100 V 2578 pF @ 100 V 2500 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 300W (Tc) 250W (Tc) 250W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247-4 TO-247-4 TO-247-3
Package / Case TO-247-4 TO-247-4 TO-247-3

Related Product By Categories

FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

ESDA6V1-5SC6Y
ESDA6V1-5SC6Y
STMicroelectronics
TVS DIODE 5.2VWM 11.4VC SOT23-6
STTH1002CG
STTH1002CG
STMicroelectronics
DIODE ARRAY GP 200V 8A D2PAK
STPS3150UF
STPS3150UF
STMicroelectronics
DIODE SCHOTTKY 150V 3A SMBFLAT
STP24N60M2
STP24N60M2
STMicroelectronics
MOSFET N-CH 600V 18A TO220
M41T83SQA6F
M41T83SQA6F
STMicroelectronics
IC RTC CLK/CALENDAR I2C 16-QFN
STM32L496VET6
STM32L496VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32G474CBT6
STM32G474CBT6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 48LQFP
STM32H755ZIT6U
STM32H755ZIT6U
STMicroelectronics
IC MCU 32BIT 2MB FLASH 144LQFP
LM293PT
LM293PT
STMicroelectronics
IC VOLT COMPARATOR DUAL 8-TSSOP
TS393IPT
TS393IPT
STMicroelectronics
IC COMPARATOR DUAL MCRPWR 8TSSOP
M24C04-FMC5TG
M24C04-FMC5TG
STMicroelectronics
IC EEPROM 4KBIT I2C 8UFDFPN
LM335ADT
LM335ADT
STMicroelectronics
SENSOR ANALOG -40C-100C 8SOIC