STW40N60M2-4
  • Share:

STMicroelectronics STW40N60M2-4

Manufacturer No:
STW40N60M2-4
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 34A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW40N60M2 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is available in the TO-247 package and is designed to offer low on-resistance and optimized switching characteristics, making it suitable for high-efficiency converters. The STW40N60M2 features a drain-source breakdown voltage of 600 V, a typical on-resistance of 0.078 Ω, and a continuous drain current of 34 A at 25°C. These characteristics render the device ideal for demanding applications requiring high efficiency and reliability.

Key Specifications

Parameter Value Unit
Order Code STW40N60M2 -
Package TO-247 -
VDS @ TJmax 650 V V
RDS(on) max 0.088 Ω Ω
ID (continuous) at TC = 25 °C 34 A A
ID (continuous) at TC = 100 °C 22 A A
ID (pulsed) 136 A A
VGS ± 25 V V
PTOT at TC = 25 °C 250 W W
Tstg -55 to 150 °C °C
Tj -55 to 150 °C °C
Rthj-case 0.50 °C/W °C/W
Rthj-pcb 30 °C/W °C/W
Rthj-amb 50 °C/W °C/W

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected
  • Low on-resistance (RDS(on)) of 0.078 Ω typical
  • Optimized switching characteristics
  • High continuous drain current of 34 A at 25°C
  • High pulse drain current of 136 A

Applications

  • Switching applications
  • LLC converters
  • Resonant converters
  • High-efficiency power conversion systems

Q & A

  1. What is the maximum drain-source breakdown voltage of the STW40N60M2?

    The maximum drain-source breakdown voltage is 600 V.

  2. What is the typical on-resistance of the STW40N60M2?

    The typical on-resistance is 0.078 Ω.

  3. What is the continuous drain current at 25°C for the STW40N60M2?

    The continuous drain current at 25°C is 34 A.

  4. What is the maximum pulse drain current for the STW40N60M2?

    The maximum pulse drain current is 136 A.

  5. What are the key features of the STW40N60M2?

    The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, and Zener-protected.

  6. In which package is the STW40N60M2 available?

    The STW40N60M2 is available in the TO-247 package.

  7. What are the typical applications of the STW40N60M2?

    The typical applications include switching applications, LLC converters, and resonant converters.

  8. What is the thermal resistance junction-case for the STW40N60M2?

    The thermal resistance junction-case is 0.50 °C/W.

  9. What is the storage temperature range for the STW40N60M2?

    The storage temperature range is -55 to 150 °C.

  10. Is the STW40N60M2 environmentally compliant?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:34A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:88mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$5.56
108

Please send RFQ , we will respond immediately.

Same Series
STB40N60M2
STB40N60M2
MOSFET N-CH 600V 34A D2PAK
STP40N60M2
STP40N60M2
MOSFET N-CH 600V 34A TO220
STW40N60M2-4
STW40N60M2-4
MOSFET N-CH 600V 34A TO247-3

Similar Products

Part Number STW40N60M2-4 STW48N60M2-4 STW70N60M2-4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 34A (Tc) 42A (Tc) 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 88mOhm @ 17A, 10V 70mOhm @ 21A, 10V 40mOhm @ 34A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V 70 nC @ 10 V 118 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 100 V 3060 pF @ 100 V 5200 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 250W (Tc) 300W (Tc) 450W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-4 TO-247-4
Package / Case TO-247-3 TO-247-4 TO-247-4

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
NTMFS006N08MC
NTMFS006N08MC
onsemi
MOSFET N-CH 80V 9.3A/82A 8PQFN
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

SMA6J8.5CA-TR
SMA6J8.5CA-TR
STMicroelectronics
TVS DIODE 8.5VWM 18.7VC SMA
STF140N6F7
STF140N6F7
STMicroelectronics
MOSFET N-CH 60V 70A TO220FP
STP40NF03L
STP40NF03L
STMicroelectronics
MOSFET N-CH 30V 40A TO220AB
SCT30N120H
SCT30N120H
STMicroelectronics
SICFET N-CH 1200V 40A H2PAK-2
SCT10N120
SCT10N120
STMicroelectronics
SICFET N-CH 1200V 12A HIP247
SCTWA90N65G2V
SCTWA90N65G2V
STMicroelectronics
SILICON CARBIDE POWER MOSFET 650
STP13NK60ZFP
STP13NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STG3682QTR
STG3682QTR
STMicroelectronics
IC SWITCH DUAL SPDT 10QFN
STG3157CTR
STG3157CTR
STMicroelectronics
IC SWITCH SPDT SINGLE SOT323-6L
TDA2822M
TDA2822M
STMicroelectronics
IC AMP AB MONO/STER 2W 8MINI DIP
L79L15ACD13TR
L79L15ACD13TR
STMicroelectronics
IC REG LINEAR -15V 100MA 8SO
L4995KTR
L4995KTR
STMicroelectronics
IC REG LIN 5V 500MA POWERSSO-24