STW40N60M2-4
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STMicroelectronics STW40N60M2-4

Manufacturer No:
STW40N60M2-4
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 34A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STW40N60M2 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is available in the TO-247 package and is designed to offer low on-resistance and optimized switching characteristics, making it suitable for high-efficiency converters. The STW40N60M2 features a drain-source breakdown voltage of 600 V, a typical on-resistance of 0.078 Ω, and a continuous drain current of 34 A at 25°C. These characteristics render the device ideal for demanding applications requiring high efficiency and reliability.

Key Specifications

Parameter Value Unit
Order Code STW40N60M2 -
Package TO-247 -
VDS @ TJmax 650 V V
RDS(on) max 0.088 Ω Ω
ID (continuous) at TC = 25 °C 34 A A
ID (continuous) at TC = 100 °C 22 A A
ID (pulsed) 136 A A
VGS ± 25 V V
PTOT at TC = 25 °C 250 W W
Tstg -55 to 150 °C °C
Tj -55 to 150 °C °C
Rthj-case 0.50 °C/W °C/W
Rthj-pcb 30 °C/W °C/W
Rthj-amb 50 °C/W °C/W

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected
  • Low on-resistance (RDS(on)) of 0.078 Ω typical
  • Optimized switching characteristics
  • High continuous drain current of 34 A at 25°C
  • High pulse drain current of 136 A

Applications

  • Switching applications
  • LLC converters
  • Resonant converters
  • High-efficiency power conversion systems

Q & A

  1. What is the maximum drain-source breakdown voltage of the STW40N60M2?

    The maximum drain-source breakdown voltage is 600 V.

  2. What is the typical on-resistance of the STW40N60M2?

    The typical on-resistance is 0.078 Ω.

  3. What is the continuous drain current at 25°C for the STW40N60M2?

    The continuous drain current at 25°C is 34 A.

  4. What is the maximum pulse drain current for the STW40N60M2?

    The maximum pulse drain current is 136 A.

  5. What are the key features of the STW40N60M2?

    The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, and Zener-protected.

  6. In which package is the STW40N60M2 available?

    The STW40N60M2 is available in the TO-247 package.

  7. What are the typical applications of the STW40N60M2?

    The typical applications include switching applications, LLC converters, and resonant converters.

  8. What is the thermal resistance junction-case for the STW40N60M2?

    The thermal resistance junction-case is 0.50 °C/W.

  9. What is the storage temperature range for the STW40N60M2?

    The storage temperature range is -55 to 150 °C.

  10. Is the STW40N60M2 environmentally compliant?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:34A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:88mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Same Series
STB40N60M2
STB40N60M2
MOSFET N-CH 600V 34A D2PAK
STW40N60M2
STW40N60M2
MOSFET N-CH 600V 34A TO247
STP40N60M2
STP40N60M2
MOSFET N-CH 600V 34A TO220

Similar Products

Part Number STW40N60M2-4 STW48N60M2-4 STW70N60M2-4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 34A (Tc) 42A (Tc) 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 88mOhm @ 17A, 10V 70mOhm @ 21A, 10V 40mOhm @ 34A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V 70 nC @ 10 V 118 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 100 V 3060 pF @ 100 V 5200 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 250W (Tc) 300W (Tc) 450W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-4 TO-247-4
Package / Case TO-247-3 TO-247-4 TO-247-4

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