STW40N60M2-4
  • Share:

STMicroelectronics STW40N60M2-4

Manufacturer No:
STW40N60M2-4
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 34A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW40N60M2 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh™ M2 technology. This device is available in the TO-247 package and is designed to offer low on-resistance and optimized switching characteristics, making it suitable for high-efficiency converters. The STW40N60M2 features a drain-source breakdown voltage of 600 V, a typical on-resistance of 0.078 Ω, and a continuous drain current of 34 A at 25°C. These characteristics render the device ideal for demanding applications requiring high efficiency and reliability.

Key Specifications

Parameter Value Unit
Order Code STW40N60M2 -
Package TO-247 -
VDS @ TJmax 650 V V
RDS(on) max 0.088 Ω Ω
ID (continuous) at TC = 25 °C 34 A A
ID (continuous) at TC = 100 °C 22 A A
ID (pulsed) 136 A A
VGS ± 25 V V
PTOT at TC = 25 °C 250 W W
Tstg -55 to 150 °C °C
Tj -55 to 150 °C °C
Rthj-case 0.50 °C/W °C/W
Rthj-pcb 30 °C/W °C/W
Rthj-amb 50 °C/W °C/W

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected
  • Low on-resistance (RDS(on)) of 0.078 Ω typical
  • Optimized switching characteristics
  • High continuous drain current of 34 A at 25°C
  • High pulse drain current of 136 A

Applications

  • Switching applications
  • LLC converters
  • Resonant converters
  • High-efficiency power conversion systems

Q & A

  1. What is the maximum drain-source breakdown voltage of the STW40N60M2?

    The maximum drain-source breakdown voltage is 600 V.

  2. What is the typical on-resistance of the STW40N60M2?

    The typical on-resistance is 0.078 Ω.

  3. What is the continuous drain current at 25°C for the STW40N60M2?

    The continuous drain current at 25°C is 34 A.

  4. What is the maximum pulse drain current for the STW40N60M2?

    The maximum pulse drain current is 136 A.

  5. What are the key features of the STW40N60M2?

    The key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche tested, and Zener-protected.

  6. In which package is the STW40N60M2 available?

    The STW40N60M2 is available in the TO-247 package.

  7. What are the typical applications of the STW40N60M2?

    The typical applications include switching applications, LLC converters, and resonant converters.

  8. What is the thermal resistance junction-case for the STW40N60M2?

    The thermal resistance junction-case is 0.50 °C/W.

  9. What is the storage temperature range for the STW40N60M2?

    The storage temperature range is -55 to 150 °C.

  10. Is the STW40N60M2 environmentally compliant?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:34A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:88mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$5.56
108

Please send RFQ , we will respond immediately.

Same Series
STB40N60M2
STB40N60M2
MOSFET N-CH 600V 34A D2PAK
STP40N60M2
STP40N60M2
MOSFET N-CH 600V 34A TO220
STW40N60M2-4
STW40N60M2-4
MOSFET N-CH 600V 34A TO247-3

Similar Products

Part Number STW40N60M2-4 STW48N60M2-4 STW70N60M2-4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 34A (Tc) 42A (Tc) 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 88mOhm @ 17A, 10V 70mOhm @ 21A, 10V 40mOhm @ 34A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V 70 nC @ 10 V 118 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 100 V 3060 pF @ 100 V 5200 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 250W (Tc) 300W (Tc) 450W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-4 TO-247-4
Package / Case TO-247-3 TO-247-4 TO-247-4

Related Product By Categories

PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

STPS40M80CT
STPS40M80CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 80V TO220AB
STPS1L60MF
STPS1L60MF
STMicroelectronics
DIODE SCHOTTKY 60V 1A DO222AA
STPS2150RL
STPS2150RL
STMicroelectronics
DIODE SCHOTTKY 150V 2A DO15
STL225N6F7AG
STL225N6F7AG
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
TDA7418
TDA7418
STMicroelectronics
IC AUDIO SIGNAL PROCESSOR 20SO
STM32F207ZET6TR
STM32F207ZET6TR
STMicroelectronics
IC MCU 32BIT 512KB FLASH 144LQFP
STM32F427VGT6TR
STM32F427VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
M74HC04RM13TR
M74HC04RM13TR
STMicroelectronics
IC INVERTER 6CH 1-INP 14SO
M24512-DRDW3TP/K
M24512-DRDW3TP/K
STMicroelectronics
IC EEPROM 512KBIT I2C 8TSSOP
M68AW512ML70ND6
M68AW512ML70ND6
STMicroelectronics
IC SRAM 8MBIT PARALLEL 44TSOP II
STP24DP05BTR
STP24DP05BTR
STMicroelectronics
IC LED DRIVER LINEAR 80MA 48TQFP