Overview
The STB40N60M2 is a high-performance N-channel power MOSFET developed by STMicroelectronics. It is part of the MDmesh M2 series, known for its excellent electrical characteristics and robust design. This MOSFET is particularly suited for high-power applications requiring low on-state resistance and high switching efficiency.
Key Specifications
| Parameter | Value |
|---|---|
| Type of Transistor | MOSFET |
| Type of Control Channel | N-Channel |
| Maximum Drain-Source Voltage (Vds) | 600 V |
| Maximum Gate-Source Voltage (Vgs) | 25 V |
| Maximum Gate-Threshold Voltage (Vgs(th)) | 4 V |
| Maximum Drain Current (Id) | 34 A |
| Maximum Junction Temperature (Tj) | 150 °C |
| Total Gate Charge (Qg) | 57 nC |
| Rise Time (tr) | 13.5 nS |
| Output Capacitance (Coss) | 117 pF |
| Maximum Drain-Source On-State Resistance (Rds(on)) | 0.088 Ohm |
| Maximum Power Dissipation (Pd) | 250 W |
| Package | D2PAK |
Key Features
- Extremely low gate charge, enhancing switching efficiency.
- Excellent output capacitance (Coss) profile, reducing switching losses.
- 100% avalanche tested, ensuring robustness under high stress conditions.
- Zener-protected gate, providing additional protection against voltage spikes.
- Low on-state resistance (Rds(on)) of 0.088 Ohm, minimizing conduction losses.
Applications
- High-power switching applications such as DC-DC converters, power supplies, and motor drives.
- Industrial power systems, including inverters and power factor correction circuits.
- Automotive systems, such as electric vehicle charging and battery management.
- Renewable energy systems, including solar and wind power inverters.
Q & A
- What is the maximum drain-source voltage of the STB40N60M2 MOSFET?
The maximum drain-source voltage (Vds) is 600 V.
- What is the maximum drain current of the STB40N60M2 MOSFET?
The maximum drain current (Id) is 34 A.
- What is the typical on-state resistance (Rds(on)) of the STB40N60M2 MOSFET?
The typical on-state resistance (Rds(on)) is 0.088 Ohm.
- What is the total gate charge (Qg) of the STB40N60M2 MOSFET?
The total gate charge (Qg) is 57 nC.
- What is the maximum junction temperature (Tj) of the STB40N60M2 MOSFET?
The maximum junction temperature (Tj) is 150 °C.
- What package is the STB40N60M2 MOSFET available in?
The STB40N60M2 MOSFET is available in the D2PAK package.
- What are some key features of the STB40N60M2 MOSFET?
Key features include extremely low gate charge, excellent output capacitance profile, 100% avalanche testing, and Zener-protected gates.
- What are typical applications for the STB40N60M2 MOSFET?
Typical applications include high-power switching, industrial power systems, automotive systems, and renewable energy systems.
- How does the STB40N60M2 MOSFET enhance switching efficiency?
The STB40N60M2 enhances switching efficiency through its extremely low gate charge and excellent output capacitance profile.
- What is the significance of the MOSFET being 100% avalanche tested?
Being 100% avalanche tested ensures the MOSFET's robustness and reliability under high stress conditions.
