STW40N60M2
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STMicroelectronics STW40N60M2

Manufacturer No:
STW40N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 34A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW40N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high efficiency and reliability in various power management applications. It features a strip layout and an improved vertical structure, which result in low on-resistance and optimized switching characteristics. The STW40N60M2 is available in the TO-247 package, making it suitable for high-power switching applications.

Key Specifications

Parameter Value Unit
Order Code STW40N60M2
Package TO-247
VDS @ TJmax 600 V V
RDS(on) max 0.078 Ω (typ.) / 0.088 Ω (max.) Ω
ID 34 A A
VGS ±25 V V
PTOT 250 W W
Tj -55 to 150 °C °C
Coss 117 pF pF
Qg 57 nC nC
td(on) 16 ns (typ.) ns
tr 7 ns (typ.) ns
td(off) 81 ns (typ.) ns
tf 9 ns (typ.) ns

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected
  • Low on-resistance and optimized switching characteristics due to MDmesh M2 technology
  • Excellent switching performance thanks to the extra driving source pin (for TO247-4 package)

Applications

  • Switching applications
  • LLC (Inductor-Inductor-Capacitor) converters
  • Resonant converters

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STW40N60M2?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the maximum continuous drain current (ID) at 25°C?

    The maximum continuous drain current (ID) at 25°C is 34 A.

  3. What is the typical on-resistance (RDS(on)) of the STW40N60M2?

    The typical on-resistance (RDS(on)) is 0.078 Ω, with a maximum of 0.088 Ω.

  4. What is the maximum gate-source voltage (VGS)?

    The maximum gate-source voltage (VGS) is ±25 V.

  5. What are the key features of the MDmesh M2 technology used in the STW40N60M2?

    The MDmesh M2 technology provides extremely low gate charge, excellent output capacitance (Coss) profile, 100% avalanche testing, and Zener protection.

  6. What are the typical switching times for the STW40N60M2?

    The typical turn-on delay time (td(on)) is 16 ns, rise time (tr) is 7 ns, turn-off delay time (td(off)) is 81 ns, and fall time (tf) is 9 ns.

  7. What is the thermal resistance junction-case (Rthj-case) for the TO-247 package?

    The thermal resistance junction-case (Rthj-case) for the TO-247 package is 0.50 °C/W.

  8. What are the common applications of the STW40N60M2?

    The STW40N60M2 is commonly used in switching applications, LLC converters, and resonant converters.

  9. What is the maximum junction temperature (Tj) for the STW40N60M2?

    The maximum junction temperature (Tj) is 150 °C.

  10. What is the maximum power dissipation (PTOT) of the STW40N60M2?

    The maximum power dissipation (PTOT) is 250 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:34A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:88mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Same Series
STB40N60M2
STB40N60M2
MOSFET N-CH 600V 34A D2PAK
STP40N60M2
STP40N60M2
MOSFET N-CH 600V 34A TO220
STW40N60M2-4
STW40N60M2-4
MOSFET N-CH 600V 34A TO247-3

Similar Products

Part Number STW40N60M2 STW48N60M2 STW70N60M2 STW40N65M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 34A (Tc) 42A (Tc) 68A (Tc) 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 88mOhm @ 17A, 10V 70mOhm @ 21A, 10V 40mOhm @ 34A, 10V 99mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V 70 nC @ 10 V 118 nC @ 10 V 56.5 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 100 V 3060 pF @ 100 V 5200 pF @ 100 V 2355 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 250W (Tc) 300W (Tc) 450W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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