STW40N60M2
  • Share:

STMicroelectronics STW40N60M2

Manufacturer No:
STW40N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 34A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW40N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high efficiency and reliability in various power management applications. It features a strip layout and an improved vertical structure, which result in low on-resistance and optimized switching characteristics. The STW40N60M2 is available in the TO-247 package, making it suitable for high-power switching applications.

Key Specifications

Parameter Value Unit
Order Code STW40N60M2
Package TO-247
VDS @ TJmax 600 V V
RDS(on) max 0.078 Ω (typ.) / 0.088 Ω (max.) Ω
ID 34 A A
VGS ±25 V V
PTOT 250 W W
Tj -55 to 150 °C °C
Coss 117 pF pF
Qg 57 nC nC
td(on) 16 ns (typ.) ns
tr 7 ns (typ.) ns
td(off) 81 ns (typ.) ns
tf 9 ns (typ.) ns

Key Features

  • Extremely low gate charge
  • Excellent output capacitance (Coss) profile
  • 100% avalanche tested
  • Zener-protected
  • Low on-resistance and optimized switching characteristics due to MDmesh M2 technology
  • Excellent switching performance thanks to the extra driving source pin (for TO247-4 package)

Applications

  • Switching applications
  • LLC (Inductor-Inductor-Capacitor) converters
  • Resonant converters

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STW40N60M2?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the maximum continuous drain current (ID) at 25°C?

    The maximum continuous drain current (ID) at 25°C is 34 A.

  3. What is the typical on-resistance (RDS(on)) of the STW40N60M2?

    The typical on-resistance (RDS(on)) is 0.078 Ω, with a maximum of 0.088 Ω.

  4. What is the maximum gate-source voltage (VGS)?

    The maximum gate-source voltage (VGS) is ±25 V.

  5. What are the key features of the MDmesh M2 technology used in the STW40N60M2?

    The MDmesh M2 technology provides extremely low gate charge, excellent output capacitance (Coss) profile, 100% avalanche testing, and Zener protection.

  6. What are the typical switching times for the STW40N60M2?

    The typical turn-on delay time (td(on)) is 16 ns, rise time (tr) is 7 ns, turn-off delay time (td(off)) is 81 ns, and fall time (tf) is 9 ns.

  7. What is the thermal resistance junction-case (Rthj-case) for the TO-247 package?

    The thermal resistance junction-case (Rthj-case) for the TO-247 package is 0.50 °C/W.

  8. What are the common applications of the STW40N60M2?

    The STW40N60M2 is commonly used in switching applications, LLC converters, and resonant converters.

  9. What is the maximum junction temperature (Tj) for the STW40N60M2?

    The maximum junction temperature (Tj) is 150 °C.

  10. What is the maximum power dissipation (PTOT) of the STW40N60M2?

    The maximum power dissipation (PTOT) is 250 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:34A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:88mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$8.97
102

Please send RFQ , we will respond immediately.

Same Series
STB40N60M2
STB40N60M2
MOSFET N-CH 600V 34A D2PAK
STW40N60M2
STW40N60M2
MOSFET N-CH 600V 34A TO247
STP40N60M2
STP40N60M2
MOSFET N-CH 600V 34A TO220

Similar Products

Part Number STW40N60M2 STW48N60M2 STW70N60M2 STW40N65M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 34A (Tc) 42A (Tc) 68A (Tc) 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 88mOhm @ 17A, 10V 70mOhm @ 21A, 10V 40mOhm @ 34A, 10V 99mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V 70 nC @ 10 V 118 nC @ 10 V 56.5 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 100 V 3060 pF @ 100 V 5200 pF @ 100 V 2355 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 250W (Tc) 300W (Tc) 450W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

SMA6J8.5CA-TR
SMA6J8.5CA-TR
STMicroelectronics
TVS DIODE 8.5VWM 18.7VC SMA
STPS20L25CT
STPS20L25CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 25V TO220AB
STPS0560Z
STPS0560Z
STMicroelectronics
DIODE SCHOTTKY 60V 500MA SOD123
MJD31CT4-A
MJD31CT4-A
STMicroelectronics
TRANS NPN 100V 3A DPAK
BD678A
BD678A
STMicroelectronics
TRANS PNP DARL 60V 4A SOT32-3
SCT30N120H
SCT30N120H
STMicroelectronics
SICFET N-CH 1200V 40A H2PAK-2
STP24N60M2
STP24N60M2
STMicroelectronics
MOSFET N-CH 600V 18A TO220
STM32F091VCT7TR
STM32F091VCT7TR
STMicroelectronics
IC MCU 32BIT 256KB FLSH 100LFQFP
ST7FLITE09Y0B6
ST7FLITE09Y0B6
STMicroelectronics
IC MCU 8BIT 1.5KB FLASH 16DIP
M24256-BWMN6T
M24256-BWMN6T
STMicroelectronics
IC EEPROM 256KBIT I2C 1MHZ 8SO
ST1S50PUR
ST1S50PUR
STMicroelectronics
IC REG BUCK ADJ 4A 10VFDFPN
PSD813F2A-90M
PSD813F2A-90M
STMicroelectronics
IC FLASH 1M PARALLEL 52PQFP