Overview
The STW48N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer low on-resistance and optimized switching characteristics, making it highly suitable for demanding high-efficiency converters. The MOSFET features a strip layout and an improved vertical structure, which enhances its performance in various high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS @ TJmax | 650 | V |
| RDS(on) max. | 70 mΩ | mΩ |
| ID (continuous) at T = 25°C | 42 A | A |
| ID (continuous) at T = 100°C | 26 A | A |
| ID (pulsed) | 168 A | A |
| Total power dissipation at T = 25°C | 300 W | W |
| Turn-on delay time | 18.5 ns | ns |
| Rise time | 17 ns | ns |
| Turn-off delay time | 119 ns | ns |
| Fall time | 13 ns | ns |
| Thermal resistance junction-case | 0.42 °C/W | °C/W |
| Thermal resistance junction-ambient | 50 °C/W | °C/W |
| Storage temperature range | -55 to 150 °C | °C |
| Operating junction temperature range | -55 to 150 °C | °C |
Key Features
- Extremely low gate charge
- Excellent output capacitance (COSS) profile
- 100% avalanche tested
- Zener-protected
- Optimized switching characteristics due to MDmesh M2 technology
- Low on-resistance
Applications
- Switching applications
- High efficiency converters
- Servers
- PV inverters
- Telecom infrastructure
- Multi kW battery chargers
Q & A
- What is the maximum drain-source voltage (VDS) of the STW48N60M2?
The maximum drain-source voltage (VDS) is 650 V.
- What is the typical on-resistance (RDS(on)) of the STW48N60M2?
The typical on-resistance (RDS(on)) is 70 mΩ.
- What is the continuous drain current (ID) at 25°C and 100°C?
The continuous drain current (ID) is 42 A at 25°C and 26 A at 100°C.
- What is the pulsed drain current (ID) of the STW48N60M2?
The pulsed drain current (ID) is 168 A.
- What are the key features of the STW48N60M2?
The key features include extremely low gate charge, excellent output capacitance (COSS) profile, 100% avalanche tested, and Zener-protected.
- What are the typical switching times for the STW48N60M2?
The turn-on delay time is 18.5 ns, rise time is 17 ns, turn-off delay time is 119 ns, and fall time is 13 ns.
- What is the thermal resistance junction-case and junction-ambient of the STW48N60M2?
The thermal resistance junction-case is 0.42 °C/W and junction-ambient is 50 °C/W.
- What is the storage and operating junction temperature range of the STW48N60M2?
The storage temperature range is -55 to 150 °C, and the operating junction temperature range is also -55 to 150 °C.
- What are some common applications of the STW48N60M2?
Common applications include switching applications, high efficiency converters, servers, PV inverters, telecom infrastructure, and multi kW battery chargers.
- What technology is used in the STW48N60M2?
The STW48N60M2 is developed using MDmesh M2 technology.
- What package type is the STW48N60M2 available in?
The STW48N60M2 is available in a TO-247 package.
