STW48N60M6
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STMicroelectronics STW48N60M6

Manufacturer No:
STW48N60M6
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 39A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW48N60M6 is a high-performance N-channel power MOSFET developed by STMicroelectronics, utilizing the advanced MDmesh™ M6 technology. This device is designed to offer enhanced switching behavior, lower on-resistance per area, and reduced switching losses compared to previous generations. The STW48N60M6 is packaged in a TO-247 package, making it suitable for a variety of high-power applications.

Key Specifications

Parameter Value Unit
Order Code STW48N60M6
Maximum Drain-Source Voltage (VDS) 600 V
Maximum Continuous Drain Current (ID) at TC = 25 °C 39 A
Maximum Continuous Drain Current (ID) at TC = 100 °C 25 A
Pulsed Drain Current (IDM) 140 A
Total Power Dissipation at TC = 25 °C (PTOT) 250 W
On-Resistance (RDS(on)) 61 mΩ (typ.)
Gate-Source Voltage (VGS) ±25 V
Thermal Resistance Junction-Case (Rthj-case) 0.5 °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 50 °C/W
Storage Temperature Range (Tstg) -55 to 150 °C

Key Features

  • Reduced switching losses
  • Lower RDS(on) per area compared to previous generations
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected
  • Excellent switching performance

Applications

  • Switching applications
  • LLC (Inductor-Inductor-Capacitor) converters
  • Boost PFC (Power Factor Correction) converters

Q & A

  1. What is the maximum drain-source voltage of the STW48N60M6?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the maximum continuous drain current at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 39 A.

  3. What is the typical on-resistance (RDS(on)) of the STW48N60M6?

    The typical on-resistance (RDS(on)) is 61 mΩ.

  4. What are the key features of the MDmesh™ M6 technology?

    The key features include reduced switching losses, lower RDS(on) per area, low gate input resistance, 100% avalanche tested, and Zener-protected.

  5. What are the typical applications of the STW48N60M6?

    The typical applications include switching applications, LLC converters, and Boost PFC converters.

  6. What is the thermal resistance junction-case (Rthj-case) of the STW48N60M6?

    The thermal resistance junction-case (Rthj-case) is 0.5 °C/W.

  7. What is the storage temperature range for the STW48N60M6?

    The storage temperature range is -55 to 150 °C.

  8. What is the total power dissipation at 25 °C for the STW48N60M6?

    The total power dissipation at 25 °C (PTOT) is 250 W.

  9. Is the STW48N60M6 Zener-protected?
  10. What package type is the STW48N60M6 available in?

    The STW48N60M6 is available in a TO-247 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:39A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:69mOhm @ 19.5A, 10V
Vgs(th) (Max) @ Id:4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2578 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW48N60M6 STW68N60M6 STWA48N60M6 STW48N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel - N-Channel N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V - 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 39A (Tc) 63A (Tc) 39A (Tc) 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V 10V
Rds On (Max) @ Id, Vgs 69mOhm @ 19.5A, 10V - 69mOhm @ 19.5A, 10V 70mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA - 4.75V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V - 57 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±25V - ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2578 pF @ 100 V - 2578 pF @ 100 V 3060 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 250W (Tc) - 250W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247 Long Leads TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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