STW48N60M6
  • Share:

STMicroelectronics STW48N60M6

Manufacturer No:
STW48N60M6
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 39A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW48N60M6 is a high-performance N-channel power MOSFET developed by STMicroelectronics, utilizing the advanced MDmesh™ M6 technology. This device is designed to offer enhanced switching behavior, lower on-resistance per area, and reduced switching losses compared to previous generations. The STW48N60M6 is packaged in a TO-247 package, making it suitable for a variety of high-power applications.

Key Specifications

Parameter Value Unit
Order Code STW48N60M6
Maximum Drain-Source Voltage (VDS) 600 V
Maximum Continuous Drain Current (ID) at TC = 25 °C 39 A
Maximum Continuous Drain Current (ID) at TC = 100 °C 25 A
Pulsed Drain Current (IDM) 140 A
Total Power Dissipation at TC = 25 °C (PTOT) 250 W
On-Resistance (RDS(on)) 61 mΩ (typ.)
Gate-Source Voltage (VGS) ±25 V
Thermal Resistance Junction-Case (Rthj-case) 0.5 °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 50 °C/W
Storage Temperature Range (Tstg) -55 to 150 °C

Key Features

  • Reduced switching losses
  • Lower RDS(on) per area compared to previous generations
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected
  • Excellent switching performance

Applications

  • Switching applications
  • LLC (Inductor-Inductor-Capacitor) converters
  • Boost PFC (Power Factor Correction) converters

Q & A

  1. What is the maximum drain-source voltage of the STW48N60M6?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the maximum continuous drain current at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 39 A.

  3. What is the typical on-resistance (RDS(on)) of the STW48N60M6?

    The typical on-resistance (RDS(on)) is 61 mΩ.

  4. What are the key features of the MDmesh™ M6 technology?

    The key features include reduced switching losses, lower RDS(on) per area, low gate input resistance, 100% avalanche tested, and Zener-protected.

  5. What are the typical applications of the STW48N60M6?

    The typical applications include switching applications, LLC converters, and Boost PFC converters.

  6. What is the thermal resistance junction-case (Rthj-case) of the STW48N60M6?

    The thermal resistance junction-case (Rthj-case) is 0.5 °C/W.

  7. What is the storage temperature range for the STW48N60M6?

    The storage temperature range is -55 to 150 °C.

  8. What is the total power dissipation at 25 °C for the STW48N60M6?

    The total power dissipation at 25 °C (PTOT) is 250 W.

  9. Is the STW48N60M6 Zener-protected?
  10. What package type is the STW48N60M6 available in?

    The STW48N60M6 is available in a TO-247 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:39A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:69mOhm @ 19.5A, 10V
Vgs(th) (Max) @ Id:4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2578 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$5.48
78

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV30/AA
DD15S20LV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WTS
DD15S20WTS
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E3X
DD26S200E3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V3X
DD26S200V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S00X
DD44S32S00X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S0V50
DD26S2S0V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X/AA
DD44S32S60V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE30/AA
DD26S20WE30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number STW48N60M6 STW68N60M6 STWA48N60M6 STW48N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel - N-Channel N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V - 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 39A (Tc) 63A (Tc) 39A (Tc) 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V 10V
Rds On (Max) @ Id, Vgs 69mOhm @ 19.5A, 10V - 69mOhm @ 19.5A, 10V 70mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA - 4.75V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V - 57 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±25V - ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2578 pF @ 100 V - 2578 pF @ 100 V 3060 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 250W (Tc) - 250W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247 Long Leads TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

STPS40M80CT
STPS40M80CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 80V TO220AB
STL76DN4LF7AG
STL76DN4LF7AG
STMicroelectronics
MOSFET 2N-CH 40V 40A PWRFLAT
STP40NF03L
STP40NF03L
STMicroelectronics
MOSFET N-CH 30V 40A TO220AB
STM32L486RGT6
STM32L486RGT6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 64LQFP
M74HC04RM13TR
M74HC04RM13TR
STMicroelectronics
IC INVERTER 6CH 1-INP 14SO
M27C1001-12B1
M27C1001-12B1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32DIP
VIPER100(022Y)
VIPER100(022Y)
STMicroelectronics
IC OFFLIN CONV FLBACK 5PENTAWATT
L9301-TR
L9301-TR
STMicroelectronics
IC PWR DRIVER N-CHANNEL PWRSSO36
VND5T035AK-E
VND5T035AK-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
L6599ATDTR
L6599ATDTR
STMicroelectronics
IC RESONANT CONVRTR CTRLR 16SOIC
STM1811LWX7F
STM1811LWX7F
STMicroelectronics
IC SUPERVISOR 1 CHANNEL SOT23-3
LM335ADT
LM335ADT
STMicroelectronics
SENSOR ANALOG -40C-100C 8SOIC